absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 3.4 i d @ v gs = 12v, t c = 100c continuous drain current 2.2 i dm pulsed drain current 13.6 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 76 mj i ar avalanche current 3.4 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt 9.2 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 1.0 (typical) g c a www.irf.com 1 technology for footnotes refer to the last page pre-irradiation features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight smd-0.5 international rectifier?s r6 tm technology provides superior power mosfets for space applications. these devices have improved immunity to single event effect (see) and have been characterized for useful performance with linear energy transfer (let) up to 90mev/(mg/cm 2 ). their combination of very low r ds(on) and faster switching times reduces power loss and increases power density in today?s high speed switching applications such as dc-dc converters and motor controllers. these devices retain all of the well established advantages of mosfets such as voltage control, ease of paralleling and temperature stability of electrical parameters. product summary part number radiation level r ds(on) i d irhnj67434 100k rads (si) 2.9 ? 3.4a IRHNJ63434 300k rads (si) 2.9 ? 3.4a radiation hardened power mosfet surface-mount (smd-0.5) irhnj67434 550v, n-channel pd-97804
irhnj67434 pre-irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 3.4 i sm pulse source current (body diode) ? ? 13.6 v sd diode forward voltage ? ? 1.0 v t j = 25c, i s = 3.4a, v gs = 0v t rr reverse recovery time ? ? 741 ns t j = 25c, i f = 3.4a, di/dt 100a/ s q rr reverse recovery charge ? ? 2.1 cv dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 550 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.47 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 2.9 ? v gs = 12v, i d = 2.2a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 3.4 ? ? s v ds = 15v, i ds = 2.2a i dss zero gate voltage drain current ? ? 10 v ds = 440v ,v gs =0v ??25 v ds = 440v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 35 v gs = 12v, i d = 3.4a q gs gate-to-source charge ? ? 12 nc v ds = 275v q gd gate-to-drain (?miller?) charge ? ? 15 t d (on) turn-on delay time ? ? 17 v dd = 275v, i d = 3.4a, t r rise time ? ? 9.3 v gs = 12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 33 t f fall time ? ? 17 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 1222 ? v gs = 0v, v ds = 25v c oss output capacitance ? 80 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 1.9 ? na nh ns a measured from the center of drain pad to center of source pad r g internal gate resistance ? 1.5 ? ? f = 1.0mhz, open drain thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.67 c/w note: corresponding spice and saber models are available on international rectifier web site.
www.irf.com 3 pre-irradiation irhnj67434 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capabil- ity. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhnj67434 and IRHNJ63434 international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. typical single event effect, safe operating area table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 300k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 550 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 v gs = -20v i dss zero gate voltage drain current ? 10 a v ds = 440v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-3) ? 2.9 ? v gs = 12v, i d = 2.2a v sd diode forward voltage ? 1.0 v v gs = 0v, i d = 3.4a 1 0 200 400 600 800 -20 -15 -10 -5 0 bias vgs (v) bias vds (v) kr xe au table 2. typical single event effect safe operating area ion let ener gy ran g e v ds (v) (mev/(m g /cm 2 )) (mev) (m) @v gs =-0v @v gs =-4v @v gs =-12v @v gs =-20v kr 32.4 679 83.3 550 550 550 550 xe 56.2 1060 83.5 550 550 550 - au 89.5 1555 84 550 550 - -
irhnj67434 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 6.0v 5.5v 5.0v bottom 4.5v 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top 15v 12v 10v 8.0v 6.0v 5.5v 5.0v bottom 4.5v 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 12v i d = 3.4a 45678910 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 60 s pulse width t j = 150c t j = 25c
www.irf.com 5 pre-irradiation irhnj67434 fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 0 4 8 1216202428323640 q g, total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 480v v ds = 300v v ds = 120v i d = 3.4a for test circuit see figure 13 1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 2000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 8. maximum safe operating area 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s
irhnj67434 pre-irradiation 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 25 50 75 100 125 150 t c , case temperature (c) 0 1 2 3 4 i d , d r a i n c u r r e n t ( a ) fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit
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0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
www.irf.com 7 pre-irradiation irhnj67434 fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit q g q gs q gd v g charge fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.5a 2.2a bottom 3.4a
irhnj67434 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 440 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l = 13mh peak i l = 3.4a, v gs = 12v i sd 3.4a, di/dt 628a/ s, v dd 550v, t j 150c footnotes: ir world headquarters: 101 n. sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 01/2013 case outline and dimensions ? smd-0.5 1 = drain 2 = gate 3 = source pad assignments
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