smd type ic smd type ic features absolute maximum ratings ta = 25 symbol rating unit drain-source voltage 30 v gs 20 continuous drain current (t j = 150 )* t a =25 i d 6.9 t a =70 5.5 pulsed drain current i dm 40 continuous source current (diode conduction) * i s 1.7 a t a =25 2 t a =70 1.3 t j ,t stg -55to150 maximum junction-to-ambient* r thja 62.5 /w * surface mounted on fr4 board, t 10 sec. parameter operating junction and storage temperature range a p d w maximum power dissipation * v ds v gate-source voltage KI4920DY smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 1 v gate-body leakage i gss v ds =0v,v gs = 20 v 100 na v ds =30v,v gs =0v 1 v ds =30v,v gs =0v,t j =55 25 on-state drain current * i d(on) v ds 5v,v gs =10v 20 a v gs =10v,i d =6.9 a 0.02 0.025 v gs =4.5v,i d = 5.8 a 0.026 0.035 forward transconductance* g fs v ds =15v,i d =6.9a 25 s schottky diode forward voltage* v sd i s =1.7a,v gs =0v 1.2 v total gate charge q g v ds =15v,v gs =5v,i d =6.9a 15 23 nc total gate charge qgt 30 50 nc gate-source charge q gs v ds =15v,v gs =10v,i d = 6.9 a 7.5 nc gate-drain charge q gd 3.5 nc turn-on delay time t d(on) 12 20 ns rise time t r v dd =15v,r l = 15 10 20 ns turn-off delay time t d(off) i d =1a,v gen =10v,r g =6 60 90 ns fall time t f 15 30 ns source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 50 90 ns * pulse test; pulse width 300 s, duty cycle 2%. a i dss zero gate voltage drain current r ds(on) drain-source on-state resistance* smd type ic smd type ic KI4920DY smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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