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  , o ne, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 power field effect transistor n-channel enhancement-mode silicon gate BUZ71 BUZ71a tmos power fets 12 amperes ?dsion) - 0.12 ohms 60 volts maximum ratings to-220ab rating drain-source voltage drain-gate voltage (rqs - 20 mil gale-source voltaga drain currant ? continuous - pulsed total power dissipation @ tc - 25c darata above 25c oparating and storage-temperature range symbol vdss vdgr vgs id 'dm pd tj' tstg BUZ71 BUZ71a so 50 20 12 48 40 0.32 -55 to 150 unit vdc vdc vde adc watts vwc c thermal characteristics thermal resistance ? junction to case > ? junction loambienl maximum lead temp, for soldering purpoaea, 1/8" from case for 5 seconds "we r&ja tl 3.12 62.5 275 c/w ?c electrical characteristics charaetarlctk symbol min tvp max unit on characteristics* gate threshold voltage (vds = vqs. id - 10 ma> static drain-source on-resistance (vgs - 1 vdc. id = 6 adc) BUZ71 BUZ71a drain-source on-voltage (vqs = 10 v) ?d - 6 adc) BUZ71 (id - 6 adc) BUZ71a forward transconductance (vds - 25v, id = 6 a) vgs(th) 'dsionl vds(on) sfs 2.1 - - 3 3.1 0.08 0.10 0.48 0.60 5.5 4 0.10 0.12 - ? vdc ohm vdc mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance total gate charge (vds ? 25 v, vgs * o, f - 1 mhz) (vds ? 40 v. vgs = k> vdc, id = 12 a) see figures 6 and 12 cis, coss crs, qg _ _ - ? - - 14 650 450 280 " pf nc switching characteristics* turn-on delay time rise time turn-off daisy time fall time (vdd - 30 v, id = 3 a, rgun " 5 ohms) sea figures 11 and 12 'd(on) tr 'd(off) tf ? - _ - ? - - - 30 85 90 110 ns source drain diode characteristics* forward on-voltage forward turn-on time havana recovery time ?s - 24 a, vqs - 0) vsd ton irr ? - ? ? 120 110 2.2 ? ? vdc ns ns internal package inductance internal drain inductance (measured from the contact screw on tab to center of die) (measured from the drain lead 0.25" from package to cantar of die) internal source inductance (measured fram the source lead 0.25* from package to source bond pad) ld l, - ? 3.5 4.5 7.5 - ? nh ?pul*t test: pulu width < 300 til. duty cycle * 2%. to-220ab notes: 1. dmensionmg ?nd tolerancmg m ansi v14.sm, 1se. 2. contbou1hc dimension: inch. 1 mizdefmsazonewhekallbodyand had bmguuwmes are allowed. styus: hnvgate 2. drain 1soufw 4. hum


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