1 aug-19-2004 n-channel logic level enhancement mode field effect transistor P2804BDG to-252 (dpak) lead-free niko-sem absolute maximum ratings (t c = 25 c unless otherwise noted) parameters/test conditions symbol limits units drain-source voltage v ds 40 v gate-source voltage v gs 20 v t c = 25 c 10 continuous drain current t c = 100 c i d 8 pulsed drain current 1 i dm 40 a t c = 25 c 32 power dissipation t c = 100 c p d 22 w operating junction & storage temperature range t j , t stg -55 to 150 lead temperature ( 1 / 16 ? from case for 10 sec.) t l 275 c thermal resistance ratings thermal resistance symbol typical maximum units junction-to-case r j c 3 c / w junction-to-ambient r ja 75 c / w 1 pulse width limited by maximum junction temperature. 2 duty cycle 1 electrical characteristics (t c = 25 c, unless otherwise noted) limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0v, i d = 250 a 40 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 1.5 2.5 v gate-body leakage i gss v ds = 0v, v gs = 20v 250 na v ds = 32v, v gs = 0v 1 zero gate voltage drain current i dss v ds = 30v, v gs = 0v, t c = 125 c 10 a on-state drain current 1 i d(on) v ds = 10v, v gs = 10v 40 a 1. gate 2. drain 3. source product summary v (br)dss r ds(on) i d 40v 28m ? 10a g d s free datasheet http:///
2 aug-19-2004 n-channel logic level enhancement mode field effect transistor P2804BDG to-252 (dpak) lead-free niko-sem v gs = 4.5v, i d = 8a 30 42 drain-source on-state resistance 1 r ds(on) v gs = 10v, i d = 10a 21 28 m ? forward transconductance 1 g fs v ds = 10v, i d = 10a 19 s dynamic input capacitance c iss 790 output capacitance c oss 175 reverse transfer capacitance c rss v gs = 0v, v ds = 10v, f = 1mhz 65 pf total gate charge 2 q g 16 gate-source charge 2 q gs 2.5 gate-drain charge 2 q gd v ds = 0.5v (br)dss , v gs = 10v, i d = 10a 2.1 nc turn-on delay time 2 t d(on) 2.2 4.4 rise time 2 t r v ds = 20v, r l = 1 ? 7.5 15 turn-off delay time 2 t d(off) i d ? 1a, v gs = 10v, r gen = 6 ? 11.8 21.3 fall time 2 t f 3.7 7.4 ns source-drain diode ratin gs and characteristics (t c = 25 c) continuous current i s 1.3 pulsed current 3 i sm 2.6 a forward voltage 1 v sd i s = i s , v gs = 0v 1 v reverse recovery time t rr i f = 5 a, dl f /dt = 100a / s 15.5 ns reverse recovery charge q rr 7.9 nc 1 pulse test : pulse width 300 sec, duty cycle 2 . 2 independent of operating temperature. 3 pulse width limited by maximum junction temperature. remark: the product marked with ?P2804BDG?, date code or lot # orders for parts with lead-free plating can be placed using the pxxxxxxg parts name. free datasheet http:///
3 aug-19-2004 n-channel logic level enhancement mode field effect transistor P2804BDG to-252 (dpak) lead-free niko-sem typical performance characteristics body diode forward voltage variation with source current and temperature 25 c t = 125 c v - body diode forward voltage(v) is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 a gs 1.0 0.8 1.2 -55 c 1.4 free datasheet http:///
4 aug-19-2004 n-channel logic level enhancement mode field effect transistor P2804BDG to-252 (dpak) lead-free niko-sem free datasheet http:///
5 aug-19-2004 n-channel logic level enhancement mode field effect transistor P2804BDG to-252 (dpak) lead-free niko-sem to-252 (dpak) mechanical data mm mm dimension min. typ. max. dimension min. typ. max. a 9.35 10.4 h 0.89 2.03 b 2.2 2.4 i 6.35 6.80 c 0.45 0.6 j 5.2 5.5 d 0.89 1.5 k 0.6 1 e 0.45 0.69 l 0.5 0.9 f 0.03 0.23 m 3.96 4.57 5.18 g 5.2 6.2 n g a h j i b c m l k d e f 13 2 free datasheet http:///
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