silicon pin photo diode high speed sensitivity 1. structure 1.1 chip size : 2.00mm x 2.00mm 1.2 chip thickness : 400 20um 1.3 metallization : top - al, bottom - au 1.4 passivation : silicon oxide 1.5 bonding pad size - anode(top) : 170um x 170um 1.6 active area : 1.72mm x 1.72mm 2. electro-optical characteristics (ta=25 ) symbol min typ max unit v op 0.3 0.32 v i sc 25 32 ? 430 1,100 ? p 940 ? v f 0.5 1.3 v i d 510 ? b vr 30 v note(1):parallel light of 1,000lux illumination is applied by a tungsten lamp o 3. maximum ratings (ta=25 ) symbol unit bvr v tj eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr auk corp. maximum ratin g 30 150 OPD2020 note(1) test condition i r =10 ? v r =10v i f =10 ? note(1) reverse breakdown voltage dark current forward voltage peak sensing wavelength spectrum sensitivity short circuit current open circuit voltage parameter reverse breakdown volta g e junction temperature parameter unit : ?
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