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tsop61.. document number 82176 rev. 1.4, 17-nov-05 vishay semiconductors www.vishay.com 1 16797 1 2 3 4 ir receiver modules for remote control systems description the tsop61.. - series are miniaturized smd-ir receiver modules for infr ared remote control sys- tems. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir fil- ter. the demodulated output signal can directly be decoded by a microprocessor. the main benefit is the operation with short burst transmission codes and high data rates features ? photo detector and preamplifier in one package ? internal filter for pcm frequency ? continuous data transmission possible ? ttl and cmos compatibility ? output active low ? low power consumption ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec special features ? enhanced data rate up to 4000 bit/s ? operation with short burst possible ( 6 cycles/burst) ? taping available for topview and sideview assembly parts table block diagram application circuit part carrier frequency tsop6130 30 khz tsop6133 33 khz tsop6136 36 khz tsop6137 36.7 khz tsop6138 38 khz tsop6140 40 khz tsop6156 56 khz 25 k 3 1;2 v s out demo- gnd pass agc input pin band dulator control circuit 4 c 1 = 4.7 f tsopxxxx out g n d circ u it c r 1 =100 +v s g n d transmitter w ith tsalxxxx v s r 1 +c 1 recommended to s u ppress po w er s u pply dist u r b ances. v o 16 8 42 the o u tp u t v oltage sho u ld not b e hold contin u o u sly a a v oltage b elo w v o = 3.3 v b y the external circ u it. e3
www.vishay.com 2 document number 82176 rev. 1.4, 17-nov-05 tsop61.. vishay semiconductors absolute maximum ratings absolute maximum ratings t amb = 25 c, unless otherwise specified electrical and opti cal characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol v alue unit supply v oltage pin 3 v s - 0.3 to 6.0 v supply current pin 3 i s 5ma output v oltage pin 4 v o - 0.3 to 6.0 v output current pin 4 i o 15 ma junction temperature t j 100 c storage temperature range t stg - 40 to + 100 c operating temperature range t amb - 25 to + 85 c power consumption t amb 85 c p tot 50 mw parameter test condition symbol min ty p. max unit supply current v s = 5 v , e v = 0 i sd 0.8 1.2 1.5 ma v s = 5 v , e v = 40 klx, sunlight i sh 1.5 ma supply v oltage v s 4.5 5.5 v transmission distance e v = 0, test signal see fig.1, ir diode tsal6200, i f = 400 ma d35m output v oltage low (pin 4) i osl = 0.5 ma, e e = 0.7 mw/m 2 , test signal see fig. 1 v osl 250 m v minimum irradiance (30 - 40 khz) pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.3 e e min 0.35 0.5 mw/m 2 minimum irradiance (56 khz) pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.3 e e min 0.4 0.6 mw/m 2 maximum irradiance t pi - 5/f o < t po < t pi + 6/f o , test signal see fig. 1 e e max 30 w/m 2 directivity angle of half transmission distance ? 1/2 50 deg
tsop61.. document number 82176 rev. 1.4, 17-nov-05 vishay semiconductors www.vishay.com 3 typical characteris tics (tamb = 25 c unless otherwise specified) figure 1. output function figure 2. pulse length and sens itivity in dark ambient figure 3. output function e e t t pi *) t v o v oh v ol t po 2) t 14337 optical test signal (ir diode tsal6200, i f =0.4 a, n=6 pulses, f=f 0 , t=10 ms) output signal t d 1) 1) 3/f 0 < t d < 9/f 0 2) t pi C 4/f 0 < t po < t pi + 6/f 0 *) t pi 6/fo is recommended for optimal function t C output pulse width ( ms ) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.1 1.0 10.0 100.0 1000.010000.0 e e C irradiance ( mw/m 2 ) 16907 po input burst duration = 950 nm, optical test signal, fig.1 output pulse e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8 134 optical t est si g nal output si g nal , ( see fig.4 ) figure 4. output pulse diagram figure 5. frequency dependence of responsivity figure 6. sensitivity in bright ambient t ,t C output pulse width ( ms ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.0 10.0 100.0 1000.010000.0 e e C irradiance ( mw/m 2 ) 16910 to ff = 950 nm, optical test signal, fig.3 to n on off 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.7 0.9 1.1 1.3 f/f 0 C relative frequency 16926 f = f 0 5% f ( 3db ) = f 0 /7 e / e C rel. responsivity e min e 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.10 1.00 10.00 100.00 e am b ient dc irradiance ( w /m 2 ) 16911 correlation w ith am b ient light so u rces: 10 w /m 2 1.4 klx (std.ill u m.a, t= 2 8 55 k) 10 w /m 2 8 .2 klx (daylight, t = 5900 k) am b ient, = 950 nm e ? threshold irradiance (m w /m ) e min 2
www.vishay.com 4 document number 82176 rev. 1.4, 17-nov-05 tsop61.. vishay semiconductors figure 7. sensitivity vs. supply v oltage disturbances figure 8. sensitivity vs. el ectric field disturbances figure 9. max. envelope duty cycle vs. burstlength 0.0 0.5 1.0 1.5 2.0 0.1 1.0 10.0 100.0 1000.0 v srms ? ac voltage on dc s u pply voltage (mv) 16912 f = f o f = 10 khz e ? threshold irradiance (m w /m2) e min f = 1 khz f = 100 hz e ? threshold irradiance (m w /m2) 0.0 0.4 0. 8 1.2 1.6 0.0 0.4 0. 8 1.2 2.0 e ? field strength of dist u r b ance (kv/m) 2.0 94 8 147 1.6 e min f(e) = f 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 burst length ( number of cycles / burst ) 16914 f = 38 khz, e e = 2 mw/m 2 max. envelope duty cycle figure 10. sensitivity vs. ambient temperature figure 11. relative spectral sensitivity vs. wavelength figure 12. directivity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 30150 153045607590 t am b ? am b ient temperat u re (c) 1691 8 sensiti v ity in dark am b ient e ? threshold irradiance (m w /m2) e min 0.0 0.2 0.4 0.6 0.8 1.0 1.2 750 850 950 1050 1150 - wavelength ( nm ) 16919 s( ) - relative spectral sensitivity rel 16801 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 30 10 20 40 50 60 70 80 1.0 0.8 0.7 d rel - relative transmission distance
tsop61.. document number 82176 rev. 1.4, 17-nov-05 vishay semiconductors www.vishay.com 5 suitable data format the circuit of the tsop61.. is designed in that way that unexpected output pulses due to noise or distur- bance signals are avoided. a bandpass filter, an inte- grator stage and an automatic gain control are used to suppress such disturbances. the distinguishing mark between data signal and dis- turbance signal are carrier frequency, burst length and duty cycle. the data signal s hould fulfill the following conditions: ? carrier frequency should be close to center fre- quency of the bandpass (e.g. 38 khz). ? burst length should be 6 cycles/burst or longer. ? after each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is necessary. ? for each burst which is longer than 1.8 ms a corre- sponding gap time is necessary at some time in the data stream. this gap time should be at least 6 times longer than the burst. ? up to 2200 short bursts per second can be received continuously. some examples for suitable data format are: nec code, toshiba micom format, sharp code, rc5 code, rc6 code, rcmm code, r-2000 code, recs-80 code. when a disturbance signal is applied to the tsop61.. it can still receive the data signal. however the sensi- tivity is reduced to that level that no unexpected pulses will occur. some examples for such disturbance signals which are suppressed by the tsop61.. are: ? dc light (e.g. from tungsten bulb or sunlight) ? continuous signal at 38 khz or at any other fre- quency ? signals from fluorescent lamps with electronic bal- last (an example of the signal modulation is in the fig- ure below). figure 13. ir signal from fluores cent lamp with low modulation 0 5 10 15 20 time (ms) 16920 ir signal ir signal from fl u orescent lamp w ith lo w mod u lation
www.vishay.com 6 document number 82176 rev. 1.4, 17-nov-05 tsop61.. vishay semiconductors package dimensions in mm 16629
tsop61.. document number 82176 rev. 1.4, 17-nov-05 vishay semiconductors www.vishay.com 7 assembly instructions reflow soldering ? reflow soldering must be done within 72 hours while stored under a max. temperature of 30 c, 60 % rh after opening the dry pack envelope. ? set the furnace temperatures for pre-heating and heating in accordance with the reflow temperature profile as shown in the diagram. excercise extreme care to keep the maximum temperature below 260 c. the temperature shown in the profile means the temperature at the device surface. since there is a temperature difference between the component and the circuit board, it should be verified that the temper- ature of the device is accurately being measured. ? handling after reflow should be done only after the work surface has been cooled off. manual soldering ? use a soldering iron of 25 w or less. adjust the temperature of the soldering iron below 300 c. ? finish soldering within three seconds. ? handle products only after the temperature has cooled off. vishay leadfree reflow solder profile 0 50 100 150 200 250 300 0 50 100 150 200 250 300 t [sec] t [c] 255 c 240 c 245 c max. 260 c m a x. 12 0 sec max. 100 sec 217 c max. 20 s max. ramp up 3 c/sec max. ramp down 6 c/sec max. 2 cycles allowed 19800
www.vishay.com 8 document number 82176 rev. 1.4, 17-nov-05 tsop61.. vishay semiconductors taping version tsop..tt 165 8 4
tsop61.. document number 82176 rev. 1.4, 17-nov-05 vishay semiconductors www.vishay.com 9 taping version tsop..tr 165 8 5
www.vishay.com 10 document number 82176 rev. 1.4, 17-nov-05 tsop61.. vishay semiconductors reel dimensions 16734
tsop61.. document number 82176 rev. 1.4, 17-nov-05 vishay semiconductors www.vishay.com 11 leader and trailer cover tape peel strength according to din en 60286-3 0.1 to 1.3 n 300 10 mm/min 165 - 180 peel angle label standard bar code labels for finished goods the standard bar code labels are product labels and used for identification of goods. the finished goods are packed in final packing area. the standard pack- ing units are labeled with standard bar code labels before transported as finished goods to warehouses. the labels are on each packing unit and contain v ishay semiconductor gmbh specific data. trailer leader no de v ices no de v ices min. 200 min. 400 start end de v ices 96 11 8 1 8
www.vishay.com 12 document number 82176 rev. 1.4, 17-nov-05 tsop61.. vishay semiconductors dry packing the reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transpor- tation and storage. final packing the sealed reel is packed into a cardboard box. a secondary cardboard box is used for shipping pur- poses. item-description item- nu m b er selection-code lot -/ serial- nu m b er data-code plant-code q u antity accepted b y: packed b y: mixed code indicator origin i n o ? batch sel cod ptc qty acc pck mixed code xxxxxxx + 1 8 8 3 10 3 (y ww ) 2 8 ? ? ? company logo plain w riting a bb re v iation length item- nu m b er se qu ence- nu m b er plant-code q u antity total length n 2 3 8 21 long bar code top length n x n ? selection?code batch- nu m b er data-code filter total length x 3 10 1 17 short bar code bottom length n x ? ? 16942 vi shay semiconductor gmbh standard bar code product label (finished g oods) 3 8 type type aluminium bag label reel 15973
tsop61.. document number 82176 rev. 1.4, 17-nov-05 vishay semiconductors www.vishay.com 13 recommended method of storage dry box storage is recommended as soon as the alu- minium bag has been opened to prevent moisture absorption. the following conditions should be observed, if dry boxes are not available: ? storage temperature 10 c to 30 c ? storage humidity 60 % rh max. after more than 72 hours under these conditions moisture content will be too high for reflow soldering. in case of moisture ab sorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 c + 5 c/ - 0 c and < 5 % rh (dry air/ nitrogen) or 96 hours at 60 c + 5 c and < 5 % rh for all device containers or 24 hours at 125 c + 5 c not suitable for reel or tubes. an eia jedec standard jesd22-a112 level 4 label is included on all dry bags. example of jesd22-a112 level 4 label esd precaution proper storage and handling procedures should be followed to prevent esd damage to the devices espe- cially when they are removed from the antistatic shielding bag. electro-stat ic sensitive devices warn- ing labels are on the packaging. vishay semiconductors standard bar-code labels the v ishay semiconductors standard bar-code labels are printed at final packing areas. the labels are on each packing unit and contain v ishay telefunken specific data. 16943 1696 2
www.vishay.com 14 document number 82176 rev. 1.4, 17-nov-05 tsop61.. vishay semiconductors ozone depleting substances policy statement it is the policy of v ishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. v arious national and international initiatives are pressing for an earlier ban on these substances. v ishay semiconductor gmbh has been able to use its polic y of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. v ishay semiconductor gmbh can certify that our semic onductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use v ishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify v ishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. v ishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.

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