f dn 359a n general description features absolute maximum ratings t a = 25 o c unless other wise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d maximum drain current - continuous (note 1a) 2.7 a - pulsed 15 p d maximum power dissipation (note 1a ) 0.5 w (note 1 b) 0.46 t j ,t stg operating and storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 250 c/w r q jc thermal resistance, junction-to-case (note 1) 75 c/w 2.7 a, 3 0 v. r ds(on ) = 0.046 w @ v gs = 10 v r ds(on ) = 0.060 w @ v gs = 4.5 v . very fast switching . low gate charge ( 5nc typical ). high power version of industry s tandard sot-23 package. identical pin out to sot-23 with 30% higher power handling capability. this n-channel logic level mosfet is produced using fairchild semiconductor 's advanced powertrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance . these devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. sot-23 supersot t m -8 soic-16 so-8 sot-223 supersot t m -6 g d s supersot -3 tm 359a d s g smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 2 4008-318-123 http://www.twtysemi.com
electrical characteristics (t a = 25 o c unless otherwise noted ) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v d bv dss / d t j breakdown voltage temp. coefficient i d = 250 a , referenced to 25 o c 23 mv/ o c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a t j = 5 5c 10 a i gssf gate - body leakage, forward v gs = 20 v,v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = - 20 v , v ds = 0 v -100 na on characteristics (note ) v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.6 3 v d v gs(th) / d t j gate threshold voltage temp. coefficient i d = 250 a , referenced to 25 o c -4 mv/ o c r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.7 a 0.037 0.046 w t j =12 5c 0.055 0.075 v gs = 4 .5 v, i d = 2.4 a 0.049 0.06 i d(on) on-state drain current v gs = 10 v, v ds = 5 v 15 a g fs forward transconductance v ds = 5 v, i d = 2.7 a 9.5 s dynamic characteristics c iss input capacitance v ds = 10 v, v gs = 0 v, f = 1.0 mhz 480 pf c oss output capacitance 120 pf c rss reverse transfer capacitance 45 pf switching ch aracteristics (note) t d(on ) turn - on delay time v dd = 5 v, i d = 1 a, v gs = 4.5 v, r gen = 6 w 6 12 ns t r turn - on rise time 13 24 ns t d(off) turn - off delay time 15 27 ns t f turn - off fall time 4 10 ns q g total gate charge v ds = 10 v, i d = 2.7 a, v gs = 5 v 5 7 nc q gs gate-source charge 1.4 nc q gd gate-drain charge 1.6 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 0.42 a v sd drain-source diode forward voltage v gs = 0 v, i s = 0.42 a (note ) 0.65 1.2 v note: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. typical r q ja using the board layouts shown below on fr-4 pcb in a still air environment : scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. a. 250 o c/w when mounted on a 0.0 2 in 2 pad of 2oz cu. b. 270 o c/w when mounted on a minimum pad. f dn 359a n smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 2 4008-318-123 http://www.twtysemi.com
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