elektronische bauelemente SSG4472N 5.1a, 200v, r ds(on) 78m ? n-ch enhancement mode power mosfet 05-nov-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provi de low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe sop-8 saves board space. fast switching speed. high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, pri nters, pcmcia cards, cellular and cordless telephones. package information package mpq leader size sop-8 2.5k 13 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 200 v gate-source voltage v gs 20 v t a = 25c 5.1 continuous drain current 1 t a = 70c i d 4.3 a pulsed drain current 2 i dm 30 a continuous source current (diode conduction) 1 i s 4.2 a t a = 25c 3.1 total power dissipation 1 t a = 70c p d 2.2 w operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10 sec 40 c / w maximum junction to ambient 1 steady state r ja 80 c / w notes: 1 surface mounted on 1 x 1 fr4 board. 2 pulse width limited by maximum junction tempera ture. sop-8 millimeter millimeter ref. min. max. ref. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. g s s s d d d d
elektronische bauelemente SSG4472N 5.1a, 200v, r ds(on) 78m ? n-ch enhancement mode power mosfet 05-nov-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 20v - - 1 v ds =160v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =160v, v gs =0, t j = 55c on-state drain current 1 i d(on) 10 - - a v ds =5v, v gs =10v - - 78 v gs =10v, i d =4a drain-source on-resistance 1 r ds(on) - - 92 m v gs =5.5v, i d =3.2a forward transconductance 1 g fs - 27 - s v ds =15v, i d =4a diode forward voltage v sd - 0.71 - v i s =2.1a, v gs =0 dynamic 2 total gate charge q g - 54 - gate-source charge q gs - 21 - gate-drain charge q gd - 34 - nc i d =4a v ds =100v v gs =5.5v turn-on delay time t d(on) - 27 - rise time t r - 35 - turn-off delay time t d(off) - 97 - fall time t f - 29 - ns v ds =100v i d =4a v gen =10v r l = 25 r gen =6 input capacitance c iss - 4552 - output capacitance c oss - 226 - reverse transfer capacitance c rss - 215 - pf v ds =15v v gs =0v f=1mhz notes: 1 pulse test pw Q 300 s duty cycle Q 2%. 2 guaranteed by design, not subject to production testing.
elektronische bauelemente SSG4472N 5.1a, 200v, r ds(on) 78m ? n-ch enhancement mode power mosfet 05-nov-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente SSG4472N 5.1a, 200v, r ds(on) 78m ? n-ch enhancement mode power mosfet 05-nov-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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