radiation hardended, solid-state relay with buffered inputs www.irf.com 1 04/22/13 description features: total dose capability to 100 krad (si) neutron fluence level of 1.8e 12 n/cm 2 optically coupled 1000v dc input to output isolation buffered input stage 3.3v compatible logic level input controlled switching times hermetically sealed package RDHB710SE20A2SX dual, 200v, 10a 8-pin surface mount for notes, please refer to page 3 the RDHB710SE20A2SX is a radiation hardened dual solid-state relay in a hermetic package. it is configured as a dual, single-pole-single-throw (spst) normally open relay with common input supply. this device is characterized for 100 krad(si) total ionizing dose, and neutron fluence level of 1.8e 12 n/cm 2 . the input and output mosfets utilize international rectifier?s r6 technology. the RDHB710SE20A2SX is optically coupled and actuated by standard logic inputs. product summary 5 absolute maximum ratings per channel @ t j = 25c (unless otherwise specified) parameter symbol value units output voltage 5, 8 v s 200 v output current 4, 5 i o 10 a input buffer voltage - (pins 4 & 6) 3 v in 7.0 v input buffer current i in 10 ma input supply voltage (pin 5) 7 v dd 10 v input supply current 7 i dd 25 ma power dissipation 4, 5 p diss 73 w operating temperature range t j -55 to +150 storage temperature range t s -65 to +150 c lead temperature t l 300 part breakdown current tr / tf logic drive number voltage voltage RDHB710SE20A2SX 200v 10a controlled 3.3v pd-97808
2 www.irf.com RDHB710SE20A2SX dual, 200v, 10a for notes, please refer to page 3 pre-irradiation general characteristics per channel @ -55c t c +125c (unless otherwise specified) electrical characteristics per channel @ -55c t c +125c (unless otherwise specified) parameter group a test conditions symbol min. typ. max. units subgroups 1 v in = 3.3v 0.15 2 v dd = 5.0v, i o = 10a 0.29 1 v in = 0.1v, v s = 200v 25 2 v in = 0.1v, v s = 150v 250 v dd = 5.0v, i o = 10a 10 15 v dd = 10v, i o = 10a 1, 7 25 1 1.0 2, 3 3.0 v in = 3.3v, v dd = 5.0v, v s = 50v r l = 5 ? , pw = 50ms v in = 0.1v, v dd = 5.0v, v s = 50v r l = 5 ? , pw = 50ms v in = 3.3v, v dd = 5.0v, v s = 50v r l = 5 ? , pw = 50ms v in = 0.1v, v dd = 5.0v, v s = 50v r l = 5 ? , pw = 50ms output on-resistance r ds(on) ? output leakage current i o a ma input buffer current v in = 3.3v i in 1, 2, 3 t on input supply current i dd 1.5 ms turn-off delay 6 1, 2, 3 t off 10 rise time 2, 6 turn-on delay 6 t r 1, 2, 3 a 0.5 fall time 2, 6 1, 2, 3 t f 2.5 1, 2, 3 parameter group a test conditions symbol min. typ. max. units subgroups input buffer threshold voltage 1, 3 v dd = 5.0v, i o = 10a v in(th) 3.0 v v i-o = 1.0kvdc, dwell = 5.0s t c = 25c v in = 0.1v, f = 1.0mhz, v s = 25v, t c = 25c thermal resistance 1 v in = 3.3v, v dd = 5.0v 1, 4 r thjc 1.4 c/w mtbf (per channel) mil-hdbk-217f, sf@tc= 25c 6.0 mhrs weight w25gms pf 210 output capacitance 1 c oss a input-to-output leakage current 1 i i-o 1.0
www.irf.com 3 RDHB710SE20A2SX dual, 200v, 10a post total dose irradiation 9, 10, 11 1. specification is guaranteed by design. 2. rise and fall times are controlled internally. 3. inputs protected for v in < 1.0v and v in > 7.0v. 4. optically coupled solid state relays (ssrs) have relatively slow turn on and turn off times. care must be taken to insure that transient currents do not cause violation of soa. if transient conditions are present, ir recommends a complete simulation to be performed by the end user to insure compliance with soa requirements as specified in the irhnj67230 data sheet. 5. while the ssr design meets the design requirements specified in mil-prf-38534, the end user is responsible for product derating, as required for the application. 6. reference figures 3 & 4 for switching test circuits and wave form; output voltage (v o ) of figure 4, switching test wave form is representative of the output mosfet and drain-to-source. 7. input supply voltage shall not exceed 5.25v@tc 70c. 8. breakdown voltage (bv dss ) of output mosfet, @ -55c, shall be derated to 80% of maximum rated voltage. 9. total dose irradiation with input bias. 10ma i dd applied and v ds = 0 during irradiation. notes for maximum ratings and electrical characteristic tables electrical characteristics per channel @ 25c (unless otherwise specified) parameter group a test conditions symbol min. typ. max. units subgroups output on-resistance 1 v in = 3.3v, v dd = 5.0v, i o = 10a r ds(on) 0.15 ? input supply current 1 v in = 3.3v, v dd = 5.0v, i o = 10a i dd 10 15 ma output leakage current 1 v in = 0.1v, v s = 200v i o 25 input buffer current 1 v in = 3.3v i in 1.0 v in = 3.3v, v dd = 5.0v, v s = 50v rl = 5 ? , pw = 50ms v in = 0.1v, v dd = 5.0v, v s = 50v rl = 5 ? , pw = 50ms v in = 3.3v, v dd = 5.0v, v s = 50v rl = 5 ? , pw = 50ms v in = 0.1v, v dd = 5.0v, v s = 50v rl = 5 ? , pw = 50ms rise time 2, 6 1 a 1 turn-on delay 6 1 turn-off delay 6 ms 1.5 fall time 2, 6 t f 1 t on 2.5 t off t r 10 0.5 radiation performance international rectifier radiation hardened solid state relays are tested to verify their hardness capability. the hardness assurance program at ir uses a cobalt-60 ( 60 co) source and heavy ion irradiation. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparision. 10. total dose irradiation with output bias. 160volts v ds applied and i dd = 0 during irradiation. 11. international rectifier does not currently have a dla certified radiation hardness.
4 www.irf.com RDHB710SE20A2SX dual, 200v, 10a opto isolation opto isolation
figure 2: typical application figure 1: maximum drain current vs case temperature per channel t c , case temperature (c) i d , drain current (a)
www.irf.com 5 RDHB710SE20A2SX dual, 200v, 10a figure 4: switching test waveform figure 3: switching test circuit (only one channel shown) rl 5 ohm 1 6 3 4 5 7 8 2 vdd =+ 5v vs=+50v 90% v _out v _in 90% 10% 10% 50% 50% ton tf tr toff 50% 50%
6 www.irf.com RDHB710SE20A2SX dual, 200v, 10a case outline and dimensions ? 8-pin surface mount package typ .150 .1625 .545 1.050 .002 8 pls. .040 _ + 1.375 .005 max. .270 .145 .040 18 0.135.020 0.255.010 pin designation pin # pin description 1out 1 + 2out 1 - 3 input gnd 4 input 1 5v dd 6 input 2 7out 2 - 8out 2 + notes: 1. dimensioning and tolerancing per asme y14.53m-1994 2. controlling dimension: inch 3. dimensions are shown in inches 4. tolerances are 0.005 uos 5. lead dimensions are prior to hot solder dip 6. lead finish per mil-prf-38534, finish a, hot solder dip (sn63pb37)
www.irf.com 7 RDHB710SE20A2SX dual, 200v, 10a part numbering nomenclature ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2013 device type rd = dc solid state relay radiation characteriization h = rad hard generation a = current design b = r6 generation current 10 = 10a volt age 10 =100 volts 20 = 200 volts screening level p = unscreened, 25c electrical test (not for qualification ) x = class k per mil-prf-38534 (fully compliant class k is presently pending dla approval) number of poles 1 = single pole 2 = dual poles package se = 8-pin surface mount radiation level 7 = 100 krad (si) features n = non buffered fast s = buffer controlled input throw configuration a = single throw, normally open x s 2 a 20 se 10 7 b h rd
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