super fast recovery diode modules 280 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 qr_0640r30 preliminary 9/12 rev. 2 outline drawing and circuit diagram qrd qrj qrc 2 3 1 2 3 1 2 3 1 2 3 1 qrf d a g h f f l j (3 typ.) e b p (3 typ.) n (2 typ.) c m q (2 typ.) 1 3 2 k (3 typ.) dimensions millimeters a 94 b 80 c 30 d 34 e 40 f 23 g 17 h 13 dimensions millimeters j 12 k m6 l 7.5 m 25.4 n 4 p 19 q 6.5 dia. description: powerex super fast recovery dual diode modules are designed for use in applications requiring fast switching. the modules are isolated for easy mounting with other components on common heatsinks. features: ? super fast recovery time ? rohs compliant ? isolated mounting ? metal baseplate ? low thermal impedance ? 2500v isolating voltage applications: ? free wheeling ? welding and plasma cutting machine
qr_0640r30 super fast recovery dual diode modules 280 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 preliminary 9/12 rev. 2 absolute maximum ratings, t j = 25 c unless otherwise specifed qrd0640r30 qrc0640r30 qrf0640r30 ratings symbol qrj0640r30 units repetitive peak reverse blocking voltage v rrm 600 volts non-repetitive peak reverse blocking voltage v rsm v rrm + 100 volts dc current, t c = 80c (resistive load) i f(dc) 280 amperes peak half cycle non-repetitive surge current (t = 8.3ms, 100% v rrm reapplied) i fsm tbd amperes i 2 t for fusing for one cycle (t = 8.3ms, 100% v rrm reapplied) i 2 t tbd a 2 sec operating junction temperature t j -40 to 150 c storage temperature t stg -40 to 150 c maximum mounting torque, m6 mounting screw 26 in-lb maximum mounting torque, m6 terminal screw 26 in-lb module weight (typical) 180 grams v isolation (60 hz, circuit to base, all terminals shorted, t = 60 sec) v rms 2500 volts electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units reverse leakage current i rrm rated v rrm 1.0 ma on-state voltage v fm i f = 200a 1.5 2.2 volts i f = 280a 1.8 2.5 volts reverse recovery time t rr i f = 200a, di/dt = tbd 120 ns reverse recovery charge q rr i f = 200a, di/dt = tbd 8.4 c thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case* r th(j-c) q per diode 0.103 c/w contact thermal resistance, case to sink r th(c-s) per module 0.05 c/w (lubricated)* *t c , t f measured point is just under the chip.
qr_0640r30 super fast recovery dual diode modules 280 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 preliminary 9/12 rev. 2 0 1 3 4 2 5 40 on-state voltage, v fm , (volts) on-state characteristics (typical) 400 4000 on-state current, i fm , (amperes) t j = 25c t j = 125c on-state current, i fm , (amperes) tbd reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) reverse recovery current, i rr , (amperes) time, (s) transient thermal impedance characteristics 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.103c/w normalized transient thermal impedance, z th(j-c') on-state current, i fm , (amperes) reverse recovery switching loss, e rr , (mj/pulse) reverse recovery switching loss (typical) tbd 180 120 90 60 30 15 maximum on-state power dissipation (sinusoidal waveform) 700 600 400 200 100 500 300 0 maximum power dissipation per diode, (watts) average on-state current, i f(avg) , (amperes) 0 40 80 120 160 200 240 conduction angle 0 360 180 180 120 90 60 30 15 maximum allowable case temperature (sinusoidal waveform) 150 130 140 120 110 80 70 100 90 60 maximum case temperature, t case , (c) average on-state current, i f(avg) , (amperes) 0 40 80 120 160 200 240 conduction angle 0 360 180 360 (dc) 180 270 120 90 60 30 15 maximum on-state power dissipation (rectangular waveform) 900 800 200 300 100 600 700 500 400 0 maximum power dissipation per diode, (watts) average on-state current, i f(avg) , (amperes) 0 40 80 120 160 240 200 280 320 360 0 40 80 120 160 240 200 280 320 360 270 360(dc) 180 120 90 30 60 15 maximum allowable case temperature (rectangular waveform) 150 130 110 50 90 70 30 maximum case temperature, t case , (c) average on-state current, i f(avg) , (amperes) conduction angle 0 360 180 conduction angle 0 360 180
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