BSS314PE optimos?-p 3 small-signal-transistor features ? p-channel ? enhancement mode ? logic level (4.5v rated) ? esd protected ? qualified according aec q101 ? 100% lead-free; rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25?c -1.5 a t a =70?c -1.2 pulsed drain current i d,pulse t a =25?c -6.1 avalanche energy, single pulse e as i d =-1.5?a, r gs =25? w 6 mj reverse diode d v /d t d v /d t i d =-1.5?a, v ds =-16?v, d i /d t =-200a/s, t j,max =150?c 6 kv/s gate source voltage v gs 20 v power dissipation 1) p tot t a =25?c w operating and storage temperature t j , t stg -55 ... 150 c esd class jesd22-a114 -hbm 1000v to 2000v soldering temperature 260 c c iec climatic category; din iec 68-1 55/150/56 c value 0.5 pg - sot - 23 3 1 2 v ds 30 v r ds(on),max v gs = - 10 v 140 m w v gs = - 4.5 v 230 i d - 1.5 a product summary type package tape and reel information marking lead free packing BSS314PE pg - sot23 h6327: 3000 pcs/ reel ygs yes non dry 3 1 2 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
BSS314PE parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - ambient r thja minimal footprint 1) - - 250 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -30 - - v gate threshold voltage v gs(th) v ds =v gs , i d =-6.3a -1 -1.5 -2 drain-source leakage current i dss v ds =-30v, v gs =0?v, t j =25?c - - -1 m a v ds =-30v, v gs =0v, t j =150?c - - -100 gate-source leakage current i gss v gs =-20v, v ds =0v - - -5 a drain-source on-state resistance r ds(on) v gs =-4.5v, i d =-1.2a - 153 230 m w v gs =-10v, i d =-1.5a - 107 140 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-1.2?a 3 - s values 1) performed on 40mm 2 fr4 pcb. the traces are 1mm wide, 70 m thick and 20mm long; they are present on both sides of the pcb. product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
BSS314PE parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 221 294 pf output capacitance c oss - 126 168 reverse transfer capacitance c rss - 7 11 turn-on delay time t d(on) - 5.1 - ns rise time t r - 3.9 - turn-off delay time t d(off) - 12.4 - fall time t f - 2.8 - gate charge characteristics gate to source charge q gs - -0.7 - nc gate to drain charge q gd - -0.3 - gate charge total q g - -2.9 - gate plateau voltage v plateau - -3.2 - v reverse diode diode continous forward current i s - - -0.5 a diode pulse current i s,pulse - - -6.1 diode forward voltage v sd v gs =0?v, i f =-1.5a, t j =25?c - 0.8 1.1 v reverse recovery time t rr - 12.5 - ns reverse recovery charge q rr - 4.3 - nc v r =-15?v, i f =-1.5a, d i f /d t =100?a/s t a =25?c values v gs =0?v, v ds =-15?v, f =1?mhz v dd =-15v, v gs =-10?v, i d =-1.5?a, r g =6? w v dd =-15v, i d =-1.5a, v gs =0?to?-10?v product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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