AOD9N52 520v,9a n-channel mosfet general description product summary 620v@150 i d (at v gs =10v) 9a r ds(on) (at v gs =10v) < 0.86 w 100% uis tested! 100% r g tested! symbol v ds the AOD9N52 have been fabricated using an advanced high voltage mosfet process that is designed to del iver high levels of performance and robustness in popula r ac- dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage 520 g d s g s d g s d top view to252 dpak bottom view AOD9N52 v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc maximum case-to-sink a maximum junction-to-case d,f c/w c/w 0.5 0.5 0.7 mj avalanche current c 216 repetitive avalanche energy c derate above 25 o c 178 1.4 a 3.8 single pulsed avalanche energy h 433 mj v/ns 5 p d v drain-source voltage 520 v 30 gate-source voltage t c =100c a i d t c =25c 9 5.7 27 pulsed drain current c continuous drain current b c junction and storage temperature range -50 to 150 c power dissipation b maximum junction-to-ambient a,g t c =25c - 55 maximum thermal characteristics units c/w 45 parameter typical w w/ o c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 g d s g s d g s d top view to252 dpak bottom view AOD9N52 rev 0: may 2012 www.aosmd.com page 1 of 6
AOD9N52 symbol min typ max units 520 620 bv dss / ? tj 0.56 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 0.71 0.86 w g fs 9 s v sd 0.72 1 v i s maximum body-diode continuous current 9 a i sm 27 a c iss 760 962 1160 pf c oss 65 98 130 pf c rss 4.5 8 12 pf r g 1.5 3.2 5 w q g 15 19.5 24 nc q gs 4.6 nc q gd 7.1 nc t d(on) 24 ns t r 44 ns t d(off) 55 ns static drain-source on-resistance v gs =10v, i d =4.5a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =250v, i d =9a, r g =25 w electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss m a v zero gate voltage drain current id=250 a, vgs=0v v ds =0v, v gs =30v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c i dss zero gate voltage drain current v ds =520v, v gs =0v gate drain charge v ds =5v, i d =250 m a v ds =420v, t j =125c i s =1a,v gs =0v v ds =40v, i d =4.5a forward transconductance dynamic parameters diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =400v, i d =9a gate source charge maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime t d(off) 55 ns t f 35 ns t rr 260 332 400 ns q rr 2.8 3.5 4.5 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =9a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w turn-off fall time body diode reverse recovery charge i f =9a,di/dt=100a/ m s,v ds =100v body diode reverse recovery time a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c in a to252 package, using junction-to-case therm al resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. h. l=60mh, i as =3.8a, v dd =150v, r g =10 ? , starting t j =25 c rev 0: may 2012 www.aosmd.com page 2 of 6
AOD9N52 typical electrical and thermal characteristics 0 2 4 6 8 10 12 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5v 6v 10v 6.5v 5.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.2 0.5 0.8 1.1 1.4 1.7 2.0 0 4 8 12 16 20 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =4.5a 40 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0 0.2 0.4 0.6 0.8 1 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c i d =30a 25 125 0 2 4 6 8 10 12 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5v 6v 10v 6.5v 5.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.2 0.5 0.8 1.1 1.4 1.7 2.0 0 4 8 12 16 20 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =4.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature rev 0: may 2012 www.aosmd.com page 3 of 6
AOD9N52 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =400v i d =4.5a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t j(max) =150 c t c =25 c 0 3 6 9 12 15 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =400v i d =4.5a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t j(max) =150 c t c =25 c 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.7 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev 0: may 2012 www.aosmd.com page 4 of 6
AOD9N52 typical electrical and thermal characteristics 0 40 80 120 160 200 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note b) 0 2 4 6 8 10 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note b) 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note g) t j(max) =150 c t a =25 c 0 40 80 120 160 200 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note b) 0 2 4 6 8 10 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note b) 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to-am bient (note g) t j(max) =150 c t a =25 c 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =55 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev 0: may 2012 www.aosmd.com page 5 of 6
AOD9N52 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id - + vdc l vgs vds id bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev 0: may 2012 www.aosmd.com page 6 of 6
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