2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter features high votage v ceo =200v high speed tf s absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 330 v collector to emitter voltage v ceo 200 v emitter to base voltage v ebo 7v collector current i cp 2a collector peak current *1 i c 4a total power dissipation ta = 25 *2 p t 2w junction temperature t j 150 storage temperature t stg -55to+150 *1 pw 10ms, duty cycle 50% *2 when mounted on ceramic substrate of 7.5cm 2 x0.7mm sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors 2SC2946 product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =250v,i e =0 1 a emitter cutoff current i ebo v eb =5v,i c =0 1 a v ce =5v,i c =100ma 20 60 160 v ce =5v,i c =1a 15 collector saturation voltage * v ce(sat) i c =1a,i b =0.1a 1 v base satruation voltage * v be(sat) i c =1a,i b =0.1a 1.5 v turn-on time t on 1 storage time t stg 2 fall time t f 1 * pulsed:pw 350s,duty cycle 2% dc current gain * h fe s see test circuit h fe classification marking n m l k hfe 20to50 30to70 50to100 80to160 2SC2946 switching time(t on ,t stg ,t r )testcircuit sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
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