cystech electronics corp. spec. no. : c601d3 issued date : 2008.12.23 revised date : 2012.02.17 page no. : 1/5 BTB857AD3 cystek product specification low vcesat pnp epitaxial planar transistor BTB857AD3 features ? low v ce (sat), v ce (sat)=-0.15v (typical), at i c / i b = -2a / -0.2a ? excellent dc current gain characteristics ? wide soa ? rohs compliant package symbol outline BTB857AD3 to-126ml e c b b base c collector e emitter absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -180 v collector-emitter voltage v ceo -140 v emitter-base voltage v ebo -6 v i c(dc) -5 collector current i c(pulse) -8 *1 a pd(t a =25 ) 1.5 power dissipation pd(t c =25 ) 20 w junction temperature tj 150 c storage temperature tstg -55~+150 c note : *1 . single pulse pw=10ms
cystech electronics corp. spec. no. : c601d3 issued date : 2008.12.23 revised date : 2012.02.17 page no. : 2/5 BTB857AD3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -180 -210 - v i c =-50 a, i e =0 bv ceo -140 -170 - v i c =-10ma, i b =0 bv ebo -6 -8 - v i e =-50 a, i c =0 i cbo - - -50 na v cb =-150v, i e =0 i ceo - - -10 a v ce =-140v, i b =0 i ebo - - -50 na v eb =-6v, i c =0 *v ce(sat) - -0.11 -0.15 v i c =-1a, i b =-100ma *v ce(sat) - -0.15 -0.3 v i c =-2a, i b =-200ma *v ce(sat) - -0.27 -0.37 v i c =-3a, i b =-300ma *v be(sat) - - -1.2 v i c =-2a, i b =-200ma *h fe 1 180 - 390 - v ce =-3v, i c =-500ma *h fe 2 120 - - - v ce =-2v, i c =-1a f t - 15 - mhz v ce =-5v, i c =-500ma, f=100mhz *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping BTB857AD3 to-126ml (rohs compliant) 200 pcs / bag, 15 bags/box, 10 boxes/carton
cystech electronics corp. spec. no. : c601d3 issued date : 2008.12.23 revised date : 2012.02.17 page no. : 3/5 BTB857AD3 cystek product specification characteristic curves current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=5v vce=2v saturation voltage vs collector current 1 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) ic=10ib vce(sat) ic=20ib ic=50ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbe(sat) @ ic=10ib on vottage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbe(on)@vce=5v power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 5 10 15 20 25 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c601d3 issued date : 2008.12.23 revised date : 2012.02.17 page no. : 4/5 BTB857AD3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c601d3 issued date : 2008.12.23 revised date : 2012.02.17 page no. : 5/5 BTB857AD3 cystek product specification to-126ml dimension *: typical inches marking: b857 device date code name style: pin 1.emitter 2.collector 3.base 3-lead to-126ml plastic package cystek packa g e code: d3 millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.118 0.134 3.000 3.400 e *0.090 *2.28 a1 0.071 0.087 1.800 2.200 e1 0.176 0.183 4.460 4.660 b 0.026 0.034 0.660 0.860 l 0.594 0.610 15.100 15.500 b1 0.046 0.054 1.170 1.370 l1 0.051 0.059 1.300 1.500 c 0.018 0.024 0.450 0.600 p 0.159 0.167 4.040 4.240 d 0.307 0.323 7.800 8.200 - 1 0.118 0.126 3.000 3.200 e 0.425 0.441 10.800 11.200 - 2 0.122 0.130 3.100 3.300 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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