features 1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . inp hbt ldmos rf mems rfsw2041d dc to 25ghz gaas spdt switch rfmd?s rfsw2041d is a reflective spdt gaas microwave monolithic inte- grated circuit (mmic) switch designed using the rfmd fd05 0.5 ? m switch process. the rfsw2041d is developed for broadband communica- tions, instrumentation, and electronic warfare. rf v3 rf1 v2 rf2 v4 v1 rfsw2041d ? low insertion loss: 1.1db at 20ghz ? high isolation: 45db at 20ghz ? excellent return loss ? 20ns switching speed ? gaas phemt technology applications ? broadband communications ? test instrumentation ? fiber optics ? military ? aerospace ds110216 ? package: die, 1.91mmx2.11mmx0.10mm rfsw2041d dc to 25ghz gaas spdt switch parameter specification unit condition min. typ. max. operating frequency dc 25 ghz insertion loss (0ghz to 5ghz) 0.9 1 db on state insertion loss (5ghz to 10ghz) 0.8 0.9 db on state insertion loss (10ghz to 15ghz) 0.9 1.25 db on state insertion loss (15ghz to 20ghz) 1.1 1.6 db on state insertion loss (20ghz to 25ghz) 1.4 1.8 db on state isolation (dc to 25ghz) 38 43 db on state (measured at inactive port) 33 35 db off state input return loss (dc to 25ghz) 10 15 db on state output return loss (dc to 25ghz) 8 13 db on state iip3 37 39 dbm 100mhz spacing 2dbm input iip2 62 67 dbm 100mhz spacing 2dbm input switching speed 20 25 ns 50% control to 90% rf control current 30 50 ua sum of all control lines control voltage -3 -5 -8 v dc
2 of 6 ds110216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rfsw2041d typical electrical performance absolute maximum ratings parameter rating unit drain bias voltage (v ctrl )-10v dc rf input power +30 dbm storage temperature -40 to +150 c operating temperature -40 to +85 c esd jesd22-a114 human body model (hbm) class 1a (all pads) caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the device under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro device s, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0 5 10 15 20 25 db ghz insertion loss over temperature (high = -5v, low = 0v) 25c 85c -40c -80 -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 25 db ghz on state isolation over temperature (high = -5v, low = 0v) 25c 85c -40c -24 -21 -18 -15 -12 -9 -6 -3 0 0 5 10 15 20 25 db ghz input return loss over temperature (high = -5v, low = 0v) 25c 85c -40c -80 -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 25 db ghz off state isolation over temperature (high = -5v, low = 0v) 25c 85c -40c
3 of 6 ds110216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rfsw2041d -24 -21 -18 -15 -12 -9 -6 -3 0 0 5 10 15 20 25 db ghz output return loss over temperature (high = -5v, low = 0v) 25c 85c -40c 38 38.5 39 39.5 40 40.5 41 0 5 10 15 20 25 dbm ghz iip3 (high = -5v, low = 0v, +2dbm input) -40c 25c 85c 34 35 36 37 38 39 40 41 42 43 0 5 10 15 20 25 dbm ghz iip3 over control voltage (low = 0v, 25c, +2dbm input) -8v -5v -3v 62 63 64 65 66 67 68 69 70 71 72 0 5 10 15 20 25 dbm ghz iip2 (high = -5v, low = 0v, +2dbm input) -40c 25c 85c 55 57 59 61 63 65 67 69 71 73 75 0 5 10 15 20 25 dbm ghz iip2 over control voltage (low = 0v, 25c, +2dbm input) -8v -5v -3v
4 of 6 ds110216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rfsw2041d die layout ? dc and gnd bondpads are 88x88um. rf bondpads are 88x150um. all units are in um. 191 0 38 3 636 1 250 1400 1550 1736 383 63 6 1 250 140 0 1550 1736 95 120 5 105 5 905 146 19 63 2110 50 3 700 1410 16 07 rfin rf1 rf2 v1 v2 v3 v4 v11 v22 v33 v4 4 gnd gn d gnd gnd gnd gnd
5 of 6 ds110216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rfsw2041d truth table pin function description interface schematic 1rfin rf input. this pad is dc coupled and matched to 50 ? from dc to 20ghz. 50 ? microstrip transmission line on 0.127mm (5mil) thich alumnia thin film substrate is recommended. 2rf1, rf2 rf output. this pad is dc coupled and matched to 50 ? from dc to 20ghz. 50 ? microstrip transmission line on 0.127mm (5mil) thich alum- nia thin film substra te is recommended. 3 v1, v2, v3, v4 dc control pad for switch operation. nominal operating voltage is -5v. 4v11, v22, v33, v44 alternate bonding locations for v1, v2, v3, v4. 5gnd provides ground path for probe measurements. control line rf path v1 v2 v3 v4 high low high low rfin - rf1 low high low high rfin - rf2 low high high low off (high isolation) high=-3v to -8v (-5v nominal), low=0, 0.2v rfin rfout 2kohm 5pf
6 of 6 ds110216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rfsw2041d measurement technique all specifications and typical performances reported in this do cument were based on data take n with the equipment listed in the stated manner. data was taken using a temperature controlled probe station utilizing 150um pitch gsg probes. the probes were placed on a ceramic coplanar to microstrip launch. the launch was then wire bonded to the die using two 1 mil bondwires. the spacing between the launch and the die was 200um, and the bondwire loop height was 100um. the thickness of the test interface was 125um (5mil). the calibration included the probes and test interfaces, so th at the measurement reference plane was at the point of bondwire attachment. therefore, all data represents the part and accompanying bondwires. insertion loss, return loss, and isolation da ta were taken using an agilent e8363b pna. iip3 and iip2 data were taken utilizing a pair of agilent e8257d signal generators and an agilent e4446a psa. preferred assembly instructions gaas devices are fragile and should be handled with great care. specially designed collets should be used where possible. the back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. epoxy should be applied to the attachment surface uniformly and sparingly to avoi d encroachment of epoxy onto the top face of the die. ideally it should not exceed half the chip height. for automated disp ense ablestick lmisr4 is reco mmended and for manual dispense ablestick 84-1 lmi or 84-1 lmit are recommended. these should be cured at a temperature of 150c for one hour in an oven especially set aside for epoxy curing only. if possible the curing oven should be flushed with dry nitrogen. the gold-tin (80% au 20% sn) eutectic die attach has a melting point of approximat ely 280c but the absolute temperature being used depends on the leadframe material used and the partic ular application. the time at maximum te mperature should be kept to a minimum. this part has gold (au) bond pads requiring the use of gold (99.99% pure) bondwire. it is recommended that 25.4um diameter gold wire be used. recommended lead bond technique is thermocompression wedge bonding with 0.001" (25 ? m) diameter wire. bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependent on the setup and application being used. ultrasonic or thermosonic bo nding is not recommended. bonds should be made from the die first and then to the mounting substrate or package. the ph ysical length of the bondwires should be minimized especially when making rf or ground connections. handling precautions to avoid damage to the devices, care should be exercised du ring handling. proper electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. esd/msl rating these devices should be treated as class 1a (250v to 500v) using the human body model as defined in jedec standard no. 22-a114. further information on esd control measures can be found in mil-std-1686 and mil-hdbk-263. this is an unpack- aged part and therefore no msl rating applies. ordering information part number description delivery method quantity rfsw2041dsb sample, dc to 25ghz gaas spdt switch gel pak 2 pc RFSW2041DSQ small quantity, dc to 25ghz gaas spdt switch gel pak 25 pc rfsw2041d dc to 25ghz gaas spdt switch gel pak 10 pc
|
