? 2006 ixys corporation all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c75v v dgr t j = 25 c to 175 c; r gs = 1 m 75 v v gsm transient 20 v i d25 t c = 25 c76a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 210 a i ar t c = 25 c10a e as t c = 25 c 500 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 10 p d t c = 25 c 176 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-220 3 g to-263 2.5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a75v v gs(th) v ds = v gs , i d = 50 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 100 na i dss v ds = v dss 1 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 25 a, notes 1, 2 9.7 12 m trenchmv tm power mosfet preliminary technical information n-channel enhancement mode avalanche rated ixta76n075t IXTP76N075T v dss =75 v i d25 =76 a r ds(on) 12 m ds99632 (11/06) to-263 (ixta) to-220 (ixtp) g s g d s g = gate d = drain s = source tab = drain (tab) (tab) features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - 42v power bus - abs systems dc/dc converters and off-line ups primary switch for 24v and 48v systems high current switching applications
ixys reserves the right to change limits, test conditions, and dimensions. ixta76n075t IXTP76N075T symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , note 1 30 55 s c iss 2580 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 390 pf c rss 90 pf t d(on) resistive switching times 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 10 a 40 ns t d(off) r g = 10 (external) 38 ns t f 33 ns q g(on) 57 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 10 a 13.6 nc q gd 12.4 nc r thjc 0.85 c/w r thch to-220 0.50 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 76 a i sm pulse width limited by t jm 240 a v sd i f = 25 a, v gs = 0 v, note 1 1.1 v t rr i f = 25 a, -di/dt = 100 a/ s80ns v r = 40 v, v gs = 0 v notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-220 (ixtp) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2006 ixys corporation all rights reserved ixta76n075t IXTP76N075T fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 8v 6v 7v 5v 9v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 38a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 76a i d = 38a fig. 5. r ds(on) normalized to i d = 38a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 0 25 50 75 100 125 150 175 200 225 250 275 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixta76n075t IXTP76N075T fig. 7. input admittance 0 20 40 60 80 100 120 140 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v gs - volts i d - amperes t j = -40oc 25oc 150oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 140 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 200 220 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 55 60 q g - nanocoulombs v gs - volts v ds = 38v i d = 10a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2006 ixys corporation all rights reserved ixta76n075t IXTP76N075T fig. 14. resistive turn-on rise time vs. drain current 17 20 23 26 29 32 35 38 41 44 47 50 10 12 14 16 18 20 22 24 26 28 30 i d - amperes t r - nanosecond s r g = 10 v gs = 10v v ds = 37v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 10 20 30 40 50 60 70 80 90 10 12 14 16 18 20 22 24 26 28 30 32 34 r g - ohms t r - nanoseconds 18 20 22 24 26 28 30 32 34 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 37v i d = 30a i d = 10a fig. 16. resistive turn-off switching times vs. junction temperature 29 30 31 32 33 34 35 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanosecond s 30 35 40 45 50 55 60 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 10 , v gs = 10v v ds = 37v i d = 10a i d = 30a fig. 17. resistive turn-off switching times vs. drain current 29 30 31 32 33 34 35 36 10 12 14 16 18 20 22 24 26 28 30 i d - amperes t f - nanoseconds 30 35 40 45 50 55 60 65 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 10 , v gs = 10v v ds = 37v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 17 20 23 26 29 32 35 38 41 44 47 50 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanosecond s r g = 10 v gs = 10v v ds = 37v i d = 30a i d = 10a fig. 18. resistive turn-off switching times vs. gate resistance 30 40 50 60 70 80 90 100 10 12 14 16 18 20 22 24 26 28 30 32 34 r g - ohms t f - nanoseconds 30 50 70 90 110 130 150 170 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 37v i d = 30a i d = 10a ixys ref: t_76n075t (2v) 7-06-06.xls
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