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| 2.70 3.70 0.55 1.05 1.6 b581 9 w features o power dissipation p d : 450 m w ? t amb=25 ??? collector current i f : 1 a c ollector - base voltage v r : 40 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? marking o sl electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 1 ma 40 v reverse voltage leakage current i r v r =4 0v v r =4 v v r =6 v 1 0.05 0.075 ma forward voltage v f i f =0. 1a i f = 1a i f = 3a 0.45 0.6 0.9 v diode capacitance c d v r = 4v f=1mhz 1 2 0 pf unit o mm so d - 1 23 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
c b d 0 . 2 0 e a 1 a 2 a e 1 l l 1 s o d - 1 2 3 p a c k a g e o u t l i n e d i m e n s i o n s s y m b o l a a 1 a 2 b c d e e 1 l l 1 | m i n 1 . 0 5 0 0 . 0 0 0 1 . 0 5 0 0 . 4 5 0 0 . 0 8 0 1 . 5 0 0 2 . 6 0 0 3 . 5 5 0 0 . 2 5 0 0 m a x 1 . 2 5 0 0 . 1 0 0 1 . 1 5 0 0 . 6 5 0 0 . 1 5 0 1 . 7 0 0 2 . 8 0 0 3 . 8 5 0 0 . 4 5 0 8 m i n 0 . 0 4 1 0 . 0 0 0 0 . 0 4 1 0 . 0 1 8 0 . 0 0 3 0 . 0 5 9 0 . 1 0 2 0 . 1 4 0 0 . 0 1 0 0 m a x 0 . 0 4 9 0 . 0 0 4 0 . 0 4 5 0 . 0 2 6 0 . 0 0 6 0 . 0 6 7 0 . 1 1 0 0 . 1 5 2 0 . 0 1 8 8 d i m e n s i o n s i n m i l l i m e t e r s d i m e n s i o n s i n i n c h e s 0 . 0 2 0 r e f 0 . 5 0 0 r e f | b581 9 w product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com |
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