2SD601LT1 n p n e p i t a x i a l s i l i c o n t r a n s i s t o r pre-amplifier,low level&low noise * complement to s9015l t 1 * collector current: ic= 100ma * collector-emitter v o ltage:vce= 45v * high t o tal pow e r dissipation:pc= 225mw * high hfe and good linearity absolute maximum ra tings at t a =25 ch aracteristic sy mb o l ratin g un it collector-base v o ltage vcbo 50 v collector-emitter v o ltage vceo 45 v emitter-base v o ltage v ebo 5 v collector current ic 100 ma collector dissipation t a =25 * p d 225 mw junction t e mperature t j 150 storage t e mperature t s tg -55-150 1. g a t e 2 . s o ur cer 3. d r a i e 1. 1. 3 2. 4 2 . 9 1 . 9 0 . 9 5 0 . 9 5 0 . 4 un i t : m m electrical characteristics at t a =25 cha r a c t e r is tic sy mbol min t y p ma x unit t e s t conditions collector-base breakdow n v o ltage bvcbo 50 v ic= 100ua ie= 0 collector-emitter breakdo w n v o ltage# bvceo 45 v ic= 1ma ib=0 emitter-base breakdow n v o ltage bv ebo 5 v ie= 100ua ic= 0 collector-base cutof f current icbo 50 na vcb= 50v ie= 0 emitter-base cutof f current iebo 50 na v eb= 5v ic= 0 dc current gain hfe 135 270 1000 vce= 5v ic= 1ma collector-emitter saturation v o ltage vce(sat) 0.3 v ic= 100ma ib= 5ma base-emitter saturation v o ltage vbe(sat) 1.00 v ic= 100ma ib= 5ma base-emitter on v o ltage vbe(on) 0.58 0.63 o.7 v vce= 5v ic= 2ma output capacitance cob 2.2 3. 5 pf vcb= 10v ie= 0 f= 1mhz current gain-bandw idth product f t 150 270 mhz vce= 5v ic= 10ma noise f i gure nf 10 db vce= 5v ic= 0.2ma f= 1khz rs= 2 kohm * t o tal device dissipation : fr=1 x 0.75 x 0.062in board,derate 25 . # pulse t e st : pulse w i dth 300us,duty cy cle 2% device marking: 2sd601l t 1 = l5 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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