rev. 4564d?wlan?11/03 features frequency range 2.4 ghz to 2.5 ghz supply voltage 2.7 v to 3.6 v 21 dbm linear output power for ieee 802.11b mode 3.5% evm at 15.5 dbm output power for ieee 802.11g mode on-chip power detector with 20 db dynamic range power-down mode and biasing control no external components for input matching low profile plastic package qfn16 (4 4 0.9 mm) benefits ieee 802.11b wlan ieee 802.11g ofdm wlan pc cards, pcmcia 2.4 ghz ism band application electrostatic sensitive device. observe precautions for handling. description circuitry the pa's is designed for low current-consumption 802.11b and 802.11g multi-mode applications such as mini-pci and pcmcia for portable devices. the low profile plastic package with internal input matching to 50 minimizes the pcb board-space and allows simplified integration with very few passive components. the on-chip power-detector provides a voltage linear to the output power while the standby/bias control logic provides power saving and shutdown as well as a linear adjustment of output power. the pa is realized as a two stage pa with internal interstage-matching and an open-collector output structure. process the power amplifier is designed in atmel's silicon-germanium (sige) process and provides excellent linearity and noise performance, high gain as well as good power- added efficiency. 2.4-ghz sige power amplifier for 802.11b and 802.11g wlan systems t7031 preliminary
2 t7031 [preliminary] 4564d?wlan?11/03 figure 1. block diagram v1_pa pa_in input matching n.c. gnd v_det_out vcc gnd vctrl interstage matching v2_pa_out standby/ biasing control 13 det. 14 15 16 1 2 3 4 5678 9 10 11 12 v2_pa_out v2_pa_out v2_pa_out interstage matching v1_pa sige pa t7031
3 t7031 [preliminary] 4564d?wlan?11/03 pin configuration figure 2. pinning qfn16 vcc gnd vctrl int_match n.c. gnd v_det_out int_match v1_pa v1_pa pa_in in_match v2_pa_out v2_pa_out v2_pa_out v2_pa_out 16 15 14 13 5 6 7 8 1 2 3 4 12 11 10 9 t7031 gnd on the paddel pin description pin symbol function 1 vcc supply voltage 2 gnd ground 3 vctrl power-up/biasing control voltage 4 int_match interstage matching (must not be connected) 5 v2_pa_out power amplifier output and supply voltage for 2nd power amplifier stage 6 v2_pa_out power amplifier output and supply voltage for 2nd power amplifier stage 7 v2_pa_out power amplifier output and supply voltage for 2nd power amplifier stage 8 v2_pa_out power amplifier output and supply voltage for 2nd power amplifier stage 9 int_match interstage matching (must not be connected) 10 v_det_out power detector output 11 gnd ground 12 n.c. not connected 13 in_match input matching (must not be connected) 14 pa_in power amplifier input 15 v1_pa supply voltage for 1 st power amplifier stage 16 v1_pa supply voltage for 1 st power amplifier stage slug ? ground
4 t7031 [preliminary] 4564d?wlan?11/03 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability . parameters symbol value unit supply voltage, no rf voltage applied v cc 6v supply current i cc 200 ma junction temperature t j 150 c storage temperature t stg -40 to +125 c input rf power p in 12 dbm control voltage power up/down and biasing v contr 0 to 3 v note: the part may not survive all maximums applied simultaneously. thermal resistance parameters symbol value unit junction ambient r thja 45 k/w operating range parameters symbol value unit supply voltage range v cc 2.7 to 3.6 v ambient temperature range t amb -30 to +80 c electrical characteristics no. parameters test conditions pin symbol min. typ. max. unit type* 1.0 supply voltage v cc 2.7 3.3 3.6 v a 1.1 frequency range f 2400 2500 mhz a 1.2 control voltage range pa operating mode v contr 12va 1.3 power-down mode v contr 0.2 v a 1.4 current consumption quiescent i cq 75 ma a 1.5 power-down mode i pd 10 a a *) type means: a = 100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter
5 t7031 [preliminary] 4564d?wlan?11/03 electrical characteristics - unmodulated carrier test conditions (unless otherwise stated): v cc = 3.3 v, frequency = 2.45 ghz, t amb = 25 c no. parameters test conditions pin symbol min. typ. max. unit type* 2.0 saturated output power for reference psat 24 dbm a 2.1 p1db output power p1db 23 dbm a 2.2 2nd harmonic rejection p out = 18 dbm, with external matching 2fout 30 db a 2.3 small signal gain i cq , small signal condition gl 22 db a 2.4 reverse isolation i cq , small signal condition isor 40 db a 2.5 input 50 vswr i cq , small signal condition vswrin 2:1 c 2.6 output 50 vswr i cq , small signal condition, with external matching vswrout 2:1 c *) type means: a = 100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter electrical charact eristics - 11 mbps cck modulation test conditions (unless otherwise stated): v cc = 3.3 v, frequency = 2.45 ghz, t amb = 25 c, ieee 802.11b conform 11 mbps cck modulation with gaussian transmit filtering no. parameters test conditions pin symbol min. typ. max. unit type* 3.0 maximum linear output power acpr1 33 dbc acpr2 55 dbc plin 21 dbm a 3.1 linear power gain p out = plin acpr1 33 dbc acpr2 55 dbc gl 22 db a 3.2 current consumption p out = plin acpr1 33 dbc acpr2 55 dbc i cc 130 ma a *) type means: a = 100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter electrical character istics - 54 mbps ofdm modulation test conditions (unless otherwise stated): v cc = 3.3 v, frequency = 2.45 ghz, t amb = 25 c, ieee 802.11g conform 54 mbps ofdm modulation, 0.7% evm measurement equipment noise floor included in evm measurement result. no. parameters test conditions pin symbol min. typ. max. unit type* 4.0 error vector magnitude p out = 15.5 dbm evm 3.5 % c 4.1 linear power gain p out = 15.5 dbm gl 22 db a 4.2 current consumption p out = 15.5 dbm i cc 85 ma a *) type means: a = 100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter
6 t7031 [preliminary] 4564d?wlan?11/03 figure 3. application circuit power detector test conditions (unless otherwise stated): v cc = 3.3 v, frequency = 2.45 ghz, t amb = 25 c no. parameters test conditions pin symbol min. typ. max. unit type* 5.0 detector voltage range pout = 2 to 22 dbm vdet 0 2 v a 5.1 settling time tset 0.5 s c *) type means: a = 100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter 15 14 13 n.c. 11 10 1 2 3 4 standby/ biasing control det. 5678 12 9 16 sige pa t7031 vcc v1_pa vctrl pa_out * v2_pa * microstrip line v_det_out * pa_in n.c. n.c. n.c.
7 t7031 [preliminary] 4564d?wlan?11/03 package information ordering information extended type number package remarks moq T7031M-PEP qfn16 - 4 x 4 taped and reeled 1500 pcs. t7031m-peq qfn16 - 4 x 4 taped and reeled 6000 pcs.
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