ixa12if1200pb preliminary copack xpt igbt 2(c) 3(e) (g) 1 part number ixa12if1200pb backside: collector c25 ce(sat) vv 1.8 ces 20 1200 = v= v i= a features / advantages: applications: package: easy paralleling due to the positive temperature coefficient of the on-state voltage rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 3x ic thin wafer technology combined with the xpt design results in a competitive low vce(sat) sonic? diode - fast and soft reverse recovery - low operating forward voltage ac motor drives solar inverter medical equipment uninterruptible power supply air-conditioning systems welding equipment switched-mode and resonant-mode power supplies inductive heating, cookers pumps, fans to-220 industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20110330a data according to iec 60747and per semiconductor unless otherwise specified ? 2011 ixys all rights reserved
ixa12if1200pb preliminary -di /dt = a/s t = c v ces v 1200 collector emitter voltage collector emitter saturation voltage t = 25c collector current a 20 a c vj symbol definition ratings typ. max. min. conditions unit 13 v v ce(sat) total power dissipation 85 w collector emitter leakage current 6.5 v turn-on delay time 70 ns t reverse bias safe operating area a v ges v 20 v gem max. transient gate emitter voltage t = c c v p tot gate emitter threshold voltage rbsoa 30 30 t = c t = c vj v max. dc gate voltage i c25 i c t = 25c vj i = a; v = 15 v cge t = 25c vj v ge(th) i ces i = ma; v = v cgece v = v ; v = 0 v ce ces ge i ges t = 25c vj gate emitter leakage current v = 20 v ge 2.1 2.1 5.9 5.4 ma 0.1 ma 0.1 500 g(on) total gate charge v = v; v = 15 v; i = a ce q ge c 27 nc t t t e e d(on) r d(off) f on off 40 ns 250 ns 100 ns 1.1 mj 1.1 mj current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load v = v; i = a v = 15 v; r = ? ce c ge g v = 15 v; r = ? ge g v = v cemax 1200 short circuit safe operating area s scsoa 10 t = c vj v = v; v = 15 v ce ge short circuit duration t short circuit current i sc sc r = ? ; non-repetitive g 40 a r thjc thermal resistance junction to case 1.5 k/w v rrm v 1200 max. repetitive reverse voltage t = 25c vj t = 25c forward current a 22 a c 14 t = c c i f25 i f t = 25c forward voltage v 2.20 v vj 1.95 t = 125c vj v f i = a f t = 25c reverse current ma * ma vj * t = 125c vj i r r rrm t = 125c vj q i t rr rm rr 1.3 c 10.5 a 350 ns reverse recovery charge max. reverse recovery current reverse recovery time v = i = a; v = 0 v f fge e rec 0.35 mj reverse recovery energy r r thjc thermal resistance junction to case 1.8 k/w v = v t = 25c c t = 25c vj t = c vj vj 10 0.3 10 10 10 10 100 100 100 600 900 -250 600 i cm 1.8 r thch thermal resistance case to heatsink k/w r thch thermal resistance case to heatsink k/w * not applicable, see ices value above igbt diode 600 v v = v cemax 900 100 100 100 100 125 125 125 125 125 na 0.50 0.50 ixys reserves the right to change limits, conditions and dimensions. 20110330a data according to iec 60747and per semiconductor unless otherwise specified ? 2011 ixys all rights reserved
ixa12if1200pb preliminary ratings xxxxxx zyyww logo part number date code lot # abcdef product markin g a ssembly line i x a 12 if 1200 pb part number igbt xpt igbt gen 1 / std copack to-220ab (3) = = = IXA12IF1200TC to-268aa (d3pak) (2) 1200 current rating [a] reverse voltage [v] = = = = package t op c m d nm 0.6 mounting torque 0.4 t vj c 150 virtual junction temperature -40 weight g 2 symbol definition typ. max. min. conditions operation temperature unit f c n 60 mounting force with clip 20 i rms rms current 35 a per terminal 125 -40 to-220 similar part package voltage class ixa12if1200hb to-247ad (3) 1200 delivery mode quantity code no. part number marking on product ordering ixa12if1200pb 507428 tube 50 ixa12if1200pb standard t stg c 150 storage temperature -40 threshold voltage v m ? v 0 max r 0 max slope resistance * 1.1 153 1.25 85 equivalent circuits for simulation t = vj i v 0 r 0 igbt diode 150 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20110330a data according to iec 60747and per semiconductor unless otherwise specified ? 2011 ixys all rights reserved
ixa12if1200pb preliminary dim. millimeter inches min. max. min. max. a 4.32 4.82 0.170 0.190 a1 1.14 1.39 0.045 0.055 a2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 c 0.35 0.56 0.014 0.022 d 14.73 16.00 0.580 0.630 e 9.91 10.66 0.390 0.420 e 2.54 bsc 0.100 bsc h1 5.85 6.85 0.230 0.270 l 12.70 13.97 0.500 0.550 l1 2.79 5.84 0.110 0.230 ?p 3.54 4.08 0.139 0.161 q 2.54 3.18 0.100 0.125 3x b2 e ?p q d l1 l 3x b 2x e c a2 h1 a1 a 123 4 2(c) 3(e) (g) 1 outlines to-220 ixys reserves the right to change limits, conditions and dimensions. 20110330a data according to iec 60747and per semiconductor unless otherwise specified ? 2011 ixys all rights reserved
ixa12if1200pb preliminary 0123 0 4 8 12 16 20 048121620 0.0 0.5 1.0 1.5 2.0 2.5 3.0 01234 0 4 8 12 16 20 v ce [v] i c [a] 9v 11 v 5678910111213 0 4 8 12 16 20 0102030 0 5 10 15 20 v ge [v] t vj = 25c t vj = 125c t vj = 25c 13 v 80 120 160 200 240 0.8 1.0 1.2 1.4 1.6 1.8 e [mj] e on fig. 1 typ. output characteristics v ce [v] i c [a] v ge =15v 17 v 19 v fig. 2 typ. output characteristics i c [a] fig. 3 typ. tranfer characteristic s v ge [v] fig. 4 typ. turn-on gate charge e off q g [nc] r g [ ] e [mj] i c [a] e on e off i c =10a v ce = 600 v v ge = 15 v t vj = 125c r g = 100 v ce = 600 v v ge =15 v t vj =125c i c =10a v ce =600v v ge =15v t vj =125c t vj =125c fig. 5 typ. switching energy vs. collector current fig. 6 typ. switching energy vs. gate resistance fig. 7 typ. transient thermal impedance junction to case igbt ixys reserves the right to change limits, conditions and dimensions. 20110330a data according to iec 60747and per semiconductor unless otherwise specified ? 2011 ixys all rights reserved
ixa12if1200pb preliminary 200 250 300 350 400 450 500 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 q rr [ c] i f [a] v f [v] di f /dt [a/ s] t vj =125c t vj = 25c t vj = 125c v r =600 v 5a 10 a 20 a fig. 1 typ. forward current versus v f fig. 2 typical reverse recov. charge q rr versus. di f /dt 200 250 300 350 400 450 500 8 12 16 20 24 i rm [a] di f /dt [a/ s] t vj =125c v r = 600 v 5a 10 a 20 a fig.3 typ: peak reverse current i rr versus di f /dt 200 250 300 350 400 450 500 100 200 300 400 500 t rr [ns] di f /dt [a/ s] 5a 10 a 20 a t vj = 125c v r =600v fig. 5 typ. recovery time t rr versus di f /dt fig. 6 typ. recovery energy e rec vs. di f /dt 200 250 300 350 400 450 500 0.1 0.2 0.3 0.4 0.5 0.6 e rec [mj] di f /dt [a/ s] t vj = 125c v r = 600 v 5a 10 a 20 a fig. 4 dynamic parameters q rr ,i rm versus t vj fig. 7 typ. transient thermal impedance junction to case diode ixys reserves the right to change limits, conditions and dimensions. 20110330a data according to iec 60747and per semiconductor unless otherwise specified ? 2011 ixys all rights reserved
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