dated : 25/07/2003 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2n3416 / 2n3417 npn silicon epitaxial planar transistor general purpose amplifier for use as general purpose amplifiers and switches requiring collector current to 300 ma. to-92 plastic package weight approx. 0.19g absolute maximum ratings* (t a = 25 ) symbol value unit collector emitter voltage v ceo 50 v collector base voltage v cbo 50 v emitter base voltage v ebo 5 v collector current i c 500 ma total device dissipation derate above 25 o c p tot 625 5 mw mw/ o c junction temperature t j 150 o c storage temperature range t s -55 to +150 o c * these ratings are limiting values above which the se rviceability of semiconductor device may be impaired. notes: 1) these ratings are based on a ma ximum junction temperature of 150 2) these are steady state limits. the fa ctory should be consulted on app lications involving pulsed or low duty cycle operations .
dated : 25/07/2003 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2n3416 / 2n3417 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at v ce =4.5v, i c =2ma st 2n3416 st 2n3417 h fe h fe 75 180 - - 225 540 - - small signal current gain at v ce =4.5v, i c =2ma, f =1khz st 2n3416 st 2n3417 h fe h fe 75 180 - - - - - - collector cutoff current at v cb =25v at v cb =18v, ta=100 i cbo i cbo - - - - 100 15 na a emitter cutoff current at v eb =5v i ebo - - 100 na collector saturation voltage at i c =50ma, i b =3ma v ce(sat) - - 0.3 v base saturation voltage at i c =50ma, i b =3ma v be(sat) 0.6 - 1.3 v collector emitter breakdown voltage* at i c =10ma v (br)ceo 50 - - v collector base breakdown voltage at i c =10 a v (br)cbo 50 - - v emitter base breakdown voltage at i e =10 a v (br)ebo 5 - - v thermal resistance junction to ambient r tha - - 200 o c /w thermal resistance junction to case r thc - - 83.3 o c /w *pulse test : pulse width Q 300 s , duty cycle Q 2%.
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