smd type transistors 1 www.kexin.com.cn 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 silicon pnp epitaxial 2SA1566 features low frequency amplifier. absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo -120 v collector to emitter voltage v ceo -120 v emitter to base voltage v ebo -5 v collector current i c -100 ma collector power dissipation p c 150 mw junction temperature tj 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector to base breakdown voltage v (br)cbo i c =-10a,i e = 0 -120 v collector to emitter breakdown voltage v (br)ceo i c =-1ma,r be = -120 v emitter to base breakdown voltage v (br)ebo i e =-10a,i c =0 -5 v collector cutoff current i cbo v cb =-70v,i e =0 -0.1 a emitter cutoff current i ebo v eb =-2v,i c =0 -0.1 a dc current transfer ratio h fe v ce =-12v,i c = -2 ma 250 800 collector to emitter saturation voltage v ce(sat) i c =-10ma,i b = -1 ma -0.15 v base to emitter saturation voltage v be(sat) i c =-10ma,i b =-1ma 1.2 v h fe classification marking jid jie rank d e hfe 250 500 400 800 free datasheet http:///
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