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| savantic semiconductor product specification silicon npn power transistors BUT76 BUT76a d escription with to-220c package high voltage;high speed high power dissipation applications switching mode power supply motor control and relay driver pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolut maximum ratings (ta=25 ) symbol parameter conditions value unit BUT76 850 v cbo collector-base voltage BUT76a open emitter 1000 v BUT76 400 v ceo collector-emitter voltage BUT76a open base 450 v v ebo emitter-base voltage open collector 7 v i c collector current 12 a i cm collector current-peak 20 a i bm base current-peak 6 a p tot total power dissipation t c =25 110 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to mounting case 1.13 k/w
savantic semiconductor product specification 2 silicon npn power transistors BUT76 BUT76a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit BUT76 400 v (br)ceo collector-emitter breakdown voltage BUT76a i c =500ma ;l c =125mh 450 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v BUT76 i c =6a ;i b =1.2a v cesat collector-emitter saturation voltage BUT76a i c =5a ;i b =1a 1.5 v BUT76 i c =6a ;i b =1.2a v besat base-emitter saturation voltage BUT76a i c =5a ;i b =1a 1.6 v BUT76 v ce =850v; v be =0 t j =150 0.5 2.0 i ces collector cut-off current BUT76a v ce =1000v; v be =0 t j =150 0.5 2.0 ma h fe dc current gain i c =8a ; v ce =3v 3.2 c ob output capacitance i e =0 ;v cb =10v;f=1mhz 150 pf f t transition frequency i c =1a ;v ce =10v 7 mhz switching times resistive load t on turn-on time 1.0 s t s storage time 3.0 s t f fall time for BUT76 i c =6a ;i b1 =-i b2 =1.2a;v ce =150v for BUT76a i c =5a ;i b1 =-i b2 =1a;v ce =150v 0.8 s savantic semiconductor product specification 3 silicon npn power transistors BUT76 BUT76a package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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