smd type ic www.kexin.com.cn 1 smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 silicon npn epitaxial planar type 2SC3606 features low noise figure, high gain. nf = 1.1db, |s 21e | 2 = 11db (f = 1 ghz) absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 3v collector current i c 80 ma base current i b 40 ma collector power dissipation p c 150 mw junction temperature t j 125 storage temperature t stg -55to125 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb =10v,i e =0 1 a emitter cut-off current i ebo v eb =1v,i c =0 1 a dc current gain h fe v ce =10v,i c =20ma 30 250 v collector output capacitance c ob 10 pf reverse transfer capacitance c re 0.7 1.15 pf transition frequency ft v ce =10 v, i c =20 ma 5 7 ghz |s 21e | 2 (1) v ce =10 v, i c =20 ma, f =500 mhz 16.5 db |s 21e | 2 (2) v ce =10v,i c =20ma,f=1ghz 7.5 11 db nf (1) v ce =10 v, i c = 5 ma, f = 500 mhz 1 db nf (2) v ce =10v,i c = 5 ma, f = 1 ghz 1.1 2 db insertion gain noise figure v cb =10v,i e =0,f=1mhz, marking marking mh free datasheet http:///
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