(see reverse side) r0 mps712 pnp darlington transistor to-92 case data shee t description the central semiconductor mps712 is a silicon pnp darlington transistor, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. maximum ratings (t a =25c) symbol units collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 10 v collector current i c 800 ma peak collector current i cm 2.0 a power dissipation p d 1.0 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 125 c/w electrical characteristics (t a =25c) symbol test conditions min max units i cbo v cb =60v 100 na i ebo v eb =8.0v 100 na bv cbo i c =10a 80 v bv ceo i c =10ma 60 v bv ebo i e =10a 10 v v ce(sat) i c =800ma, i b =8.0ma 1.25 v v be(on) v ce =5.0v, i c =800ma 1.80 v h fe v ce =5.0v, i c =100ma 5k h fe v ce =5.0v, i c =500ma 10k
mps712 pnp darlington transistor to-92 package - mechanical outline r1 g a b f e i h c d 1 2 3 min max min max a (dia) 0.175 0.205 4.45 5.21 b 0.170 0.210 4.32 5.33 c 0.500 - 12.70 - d 0.016 0.022 0.41 0.56 e f g 0.125 0.165 3.18 4.19 h 0.080 0.105 2.03 2.67 i to-92 (rev: r1) lead code: 1) emitter 2) base 3) collector 0.015 0.38 dimensions symbol inches millimeters 0.100 2.54 0.050 1.27
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