inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD628 description collector-emitter sustaining voltage- : v ceo(sus) = 100v(min.) high dc current gain- : h fe = 1000(min.)@i c = 5a low collector saturation voltage- : v ce (sat) = 2.0v(max.)@ i c = 5a complement to type 2sb638 applications designed for low frequency power amplifier and high current switching applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 7 v i c collector current-continunous 10 a i cm collector current-peak 15 a i b b base current-continunous 2 a p c collector power dissipation @t c =25 80 w t j junction temperature 150 t stg storage temperature range -65~+150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD628 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 200ma; r be = 100 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c = 5a; i b = 10ma b 2.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 10a; i b = 100ma 3.0 v v be (sat)-1 base-emitter saturation voltage i c = 5a; i b = 10ma b 2.0 v v be (sat)-2 base-emitter saturation voltage i c = 10a; i b = 100ma 3.5 v i cbo collector cutoff current v cb = 100v; i e = 0 0.1 ma i ceo collector cutoff current v ce = 80v; r be = 1.0 a h fe dc current gain i c = 5a, v ce = 3v 1000 20000 switching times t on turn-on time 2 s t off fall time i c = 5a, i b1 = -i b2 = 10ma 8 s isc website www.iscsemi.cn
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