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| savantic semiconductor product specification silicon pnp power transistors 2SB1370 d escription with to-220fa package p c =2w(t a =25 ) /30w(t c =25 ) low collector saturation voltage wide area of safe operation pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector -emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a i cm collector current-peak -6 a t a =25 2.0 p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1370 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma; i b =0 -60 v v (br)cbo collector-base breakdown voltage i c =-50a; i e =0 -60 v v (br)ebo emitter-base breakdown voltage i e =-50a; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2a ;i b =-0.2a -1.5 v v besat base-emitter saturation voltage i c =-2a; i b =-0.2a -1.5 v i cbo collector cut-off current v cb =-60v; i e =0 -10 a i ebo emitter cut-off current v eb =-4v; i c =0 -10 a h fe dc current gain i c =-0.5a ; v ce =-5v 100 320 f t transition frequency i c =-0.5a; v ce =-5v 15 mhz c ob collector output capacitance f=1mhz ; v cb =10v 80 pf savantic semiconductor product specification 3 silicon pnp power transistors 2SB1370 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
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