1/8 august 2003 STGW20NB60KD n-channel 20a - 600v -to-247 short circuit proof powermesh? igbt n high input impedance (voltage driven) n low on-voltage drop (v cesat ) n low on-losses n low gate charge n high current capability n off losses include tail current n very high frequency operation n short circuit rated n latch current free operation description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding performances. the suffix k identifies a family optimized for high frequency motor control applications with short circuit withstand capability. applications n high frequency motor controls n u.p.s. n welding equipments ordering information type v ces v ce(sat) i c STGW20NB60KD 600 v < 2.8 v20a sales type marking package packaging STGW20NB60KD gw20nb60kd to-247 tube 1 2 3 to-247 internal schematic diagram
STGW20NB60KD 2/8 absolute maximum ratings thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic symbol parameter value unit v ces collector-emitter voltage (v gs =0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c =25c 40 a i c collector current (continuous) at t c =100c 20 a i cm ( ) collector current (pulsed) 80 a tsc short circuit withstand 10 m s p tot total dissipation at t c = 25c 150 w derating factor 1.2 w/c t stg storage temperature C55to150 c t j max. operating junction temperature rthj-case thermal resistance junction-case max 0.83 c/w rthj-amb thermal resistance junction-ambient max 50 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collectro-emitter breakdown voltage i c = 250 a, v ge = 0 600 v i ces collector cut-off (v ge =0) v ce = max rating, t c =25c 10 a v ce = max rating, t c = 125 c 100 a i ges gate-emitter leakage current (v ce =0) v ge =20v,v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250a 57v v ce(sat) collector-emitter saturation voltage v ge =15v,i c =20a 2.3 2.8 v v ge = 15v, i c = 20 a, tj =125c 1.9 v symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25v , i c =20 a 8s c ies input capacitance v ce =25v,f=1mhz,v ge =0 1560 pf c oes output capacitance 190 pf c res reverse transfer capacitance 38 pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480v, i c =20a, v ge =15v 85 14.4 51 11 5 nc nc nc tscw short circuit withstand time v ce = 0.5 bvces , v ge =15v , tj = 125c , r g =10 w 10 s
3/8 STGW20NB60KD switching on switching off collector-emitter diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v cc =480v,i c =20a r g =10 w ,v ge =15v 40 ns t r rise time 36 ns (di/dt) on turn-on current slope v cc = 480 v, i c =20ar g =10 w v ge = 15 v,tj = 125c 350 a/s eon turn-on switching losses 650 j symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c =20a, r ge =10 w ,v ge =15v 130 ns t r (v off ) off voltage rise time 25 ns t d ( off ) delay time 105 ns t f fall time 95 ns e off (**) turn-off switching loss 0.5 mj e ts total switching loss 0.6 mj t c cross-over time v cc = 480 v, i c =20a, r ge =10 w ,v ge =15v tj = 125 c 175 ns t r (v off ) off voltage rise time 46 ns t d ( off ) delay time 130 ns t f fall time 150 ns e off (**) turn-off switching loss 0.70 mj e ts total switching loss 1.05 mj symbol parameter test conditions min. typ. max. unit i f i fm forward current forward current pulsed 20 80 a a v f forward on-voltage i f =10a i f = 10 a, tj = 125 c 1.27 1 2.0 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f =10a,v r =27v, tj =125c, di/dt = 100a/ m s 80.5 181 4.5 ns nc a
STGW20NB60KD 4/8 transfer characteristics normalized gate threshold voltage vs temp. transconductance output characteristics switching off safe operating area thermal impedance
5/8 STGW20NB60KD turn-off energy losses vs temperature collector-emitter on voltage vs temperature collector-emitter on voltage vs collector cur- rent capacitance variations normalized break-down voltage vs temp. gate-charge vs gate-emitter voltage
STGW20NB60KD 6/8 fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit total switch losses vs collector current diode forward voltage
7/8 STGW20NB60KD dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
STGW20NB60KD 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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