voidless-hermetically-sealed surface mount ultra fast re co very g la ss re c tifier s www. microsemi . com scottsdale division 1n6626us thru 1n6631us 1n6626us ? 1n6631us description appearance this ?ultrafast recovery? rectifier diode series is military qualified to mil-prf- 19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. these industry-recognized 2.0 to 4.0 amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless- glass construction using an internal ?categ ory i? metallurgical bond. these devices are also available in axial-leaded packages for thru-hole mounting (see separate data sheet for 1n6626 thru 1n6631). microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ul trafast device types in both through-hole and surface mount packages. packag e ?e? or d-5b important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? surface mount series equivalent to the jedec registered 1n6626 to 1n6631 series ? voidless hermetically sealed glass package ? extremely robust construction ? triple-layer passivation ? internal ? category i? metallurgical bonds ? jan, jantx, and jantxv available per mil-prf- 19500/590 ? further options for screening in accordance with mil- prf-19500 for jans by using a ?msp? prefix, e.g. msp6626us, msp6629us, etc. ? axial-leaded equivalents also available (see separate data sheet for 1n6626 thru 1n6631) ? ultrafast recovery rectifier series 200 to 1000 v ? military and other high-reliability applications ? switching power supplies or other applications requiring extremely fast switching & low forward loss ? high forward surge current capability ? low thermal resistance ? controlled avalanche with peak reverse power capability ? inherently radiation hard as described in microsemi micronote 050 maximum ratings mechanical and packaging ? junction temperature: -65 o c to +175 o c ? storage temperature: -65 o c to +175 o c ? peak forward surge current @ 25 o c: 75a (except 1n6631 which is 60a) note: test pulse = 8.3ms, half-sine wave. ? average rectified forward current (i o ) at t ec = +110 o c: 1n6626us thru 1n6628us 4.0 a 1n6629us thru 1n6631us 2.8 a (derate linearly at 1.5%/ o c for t ec > +110 o c) ? average rectified forward current (i o ) at t a =25 o c: 1n6626us thru 1n6628us 1.55 a 1n6629us thru 1n6631us 1.15 a (derate linearly at 0.67%/ o c for t a >+25 o c. this i o rating is for pc boards where thermal resistance from mounting point to ambient is sufficiently controlled where t j(max) is not exceeded. see latest issue of mil-prf-19500/590) ? thermal resistance junction to endcap (r jec ): 10 o c/w ? capacitance at v r = 10 v: 40 pf ? solder temperature: 260 o c for 10 s (maximum) ? case: hermetically se aled voidless hard glass with tungsten slugs ? terminations: end caps are copper with tin/lead (sn/pb) finish. note: previous inventory had solid silver end caps with tin/lead finish. ? marking: cathode band only ? polarity: cathode indicated by band ? tape & reel option: standard per eia-481-b ? weight: 539 mg ? see package dimensions and recommended pad layout on last page microsemi scottsdale division page 1 copyright ? 2007 6-07-2007 rev d 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
voidless-hermetically-sealed surface mount ultra fast re co very g la ss re c tifier s www. microsemi . com scottsdale division 1n6626us thru 1n6631us 1n6626us ? 1n6631us electrical characteristics @ 25 o c maximum reverse current i r @ v rwm type number minimum break- down voltage v r i r = 50 a maximum forward voltage v f @ i f working peak reverse voltage v rwm t a =25 o c t a =150 o c maximum reverse recovery time (low current) t rr note 1 maximum reverse recovery time (high current) t rr note 2 peak recovery current i rm (rec) i f = 2 a, 100 a/ s note 2 forward recovery voltage v frm max i f = 0.5 a t r = 12 ns v v @ a v @ a v a a ns ns a v 1n6626us 220 1.35v @ 1.2a 1.50v @ 4.0a 200 2.0 500 30 45 3.5 8 1n6627us 440 1.35v @ 1.2a 1.50v @ 4.0a 400 2.0 500 30 45 3.5 8 1n6628us 660 1.35v @ 1.2a 1.50v @ 4.0a 600 2.0 500 30 45 3.5 8 1n6629us 880 1.40v @ 1.0a 1.70v @ 3.0a 800 2.0 500 50 60 4.2 12 1n6630us 990 1.40v @ 1.0a 1.70v @ 3.0a 900 2.0 500 50 60 4.2 12 1n6631us 1100 1.60v @ 1.0a 1.95v @ 2.0a 1000 4.0 600 60 80 5.0 20 note 1: low current reverse recovery time test conditions: i f =0.5a, i rm =1.0a, i r(rec) = 0.25a per mil-std-750, method 4031, condition b. note 2: high current reverse recovery time test conditions: i f = 2 a, 100 a/ s mil-std-750, method 4031, condition d. symbols & definitions symbol definition v br minimum breakdown voltage: the minimum volt age the device will exhibit at a specified current. v rwm working peak reverse voltage: the maximum peak voltage that can be app lied over the operating temperature range. v f maximum forward voltage: the maximum forward vo ltage the device will exhibit at a specified current. i r maximum reverse current: the maximum reverse (leakage) current that will flow at the specified voltage and temperature. c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage. t rr reverse recovery time: the time interval betwe en the instant the current passes through zero when changing from the forward direction to the reverse di rection and a specified recovery decay point after a peak reverse current is reached. charts and graphs figure 1 figure 2 typical forward current typical forward current vs vs forward voltage forward voltage microsemi scottsdale division page 2 copyright ? 2007 6-07-2007 rev d 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
voidless-hermetically-sealed surface mount ultra fast re co very g la ss re c tifier s www. microsemi . com scottsdale division 1n6626us thru 1n6631us 1n6626us ? 1n6631us figure 3 figure 4 typical reverse current vs. typical reverse current vs. applied reverse voltage applied reverse voltage 10ms figure 5 figure 6 forward pulse current vs. reverse pulse power vs. pulse duration pulse duration microsemi scottsdale division page 3 copyright ? 2007 6-07-2007 rev d 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
voidless-hermetically-sealed surface mount ultra fast re co very g la ss re c tifier s www. microsemi . com scottsdale division 1n6626us thru 1n6631us 1n6626us ? 1n6631us package dimensions and pad layout note: this package outline has also previously pad layout been identified as ?d-5b? inches mm a 0.288 7.32 b 0.070 1.78 c 0.155 3.94 note: if mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. inches mm min max min max bl .205 .225 5.21 5.72 bd .137 .148 3.48 3.76 ect .019 .028 0.48 0.711 s .003 --- 0.08 --- microsemi scottsdale division page 4 copyright ? 2007 6-07-2007 rev d 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
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