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d a t a sh eet product speci?cation supersedes data of 1999 may 21 2001 oct 10 discrete semiconductors bas29; bas31; bas35 general purpose controlled avalanche (double) diodes b ook, halfpage m3d088
2001 oct 10 2 philips semiconductors product speci?cation general purpose controlled avalanche (double) diodes bas29; bas31; bas35 features small plastic smd package switching speed: max. 50 ns general application continuous reverse voltage: max. 90 v repetitive peak reverse voltage: max. 110 v repetitive peak forward current: max. 600 ma repetitive peak reverse current: max. 600 ma. applications general purpose switching in e.g. surface mounted circuits. description general purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic smd sot23 packages. the bas29 consists of a single diode. the bas31 has two diodes in series. the bas35 has two diodes with a common anode. marking note 1. * = p : made in hong kong. * = t : made in malaysia. * = w : made in china. type number marking code (1) bas29 l20 bas31 l21 or * v1 bas35 l22 or * v2 pinning pin description bas29 bas31 bas35 1 anode anode cathode (k1) 2 not connected cathode cathode (k2) 3 cathode common connection common anode fig.1 simplified outline (sot23) and symbols. handbook, halfpage 21 3 a. simplified outline. c. bas31 diode. b. bas29 diode. d. bas35 diode. mam233 1 2 3 1 2 3 1 2 n.c. 3
2001 oct 10 3 philips semiconductors product speci?cation general purpose controlled avalanche (double) diodes bas29; bas31; bas35 limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. device mounted on an fr4 printed-circuit board. symbol parameter conditions min. max. unit per diode v rrm repetitive peak reverse voltage - 110 v v r continuous reverse voltage - 90 v i f continuous forward current single diode loaded; see fig.2; note 1 - 250 ma double diode loaded; see fig.2; note 1 - 150 ma i frm repetitive peak forward current - 600 ma i fsm non-repetitive peak forward current square wave; t j =25 c prior to surge; see fig.4 t=1 m s - 10 a t = 100 m s - 4a t=1s - 0.75 a p tot total power dissipation t amb =25 c; note 1 - 250 mw i rrm repetitive peak reverse current - 600 ma e rrm repetitive peak reverse energy t p 3 50 m s; f 20 hz; t j =25 c - 5mj t stg storage temperature - 65 +150 c t j junction temperature - 150 c
2001 oct 10 4 philips semiconductors product speci?cation general purpose controlled avalanche (double) diodes bas29; bas31; bas35 electrical characteristics t j =25 c unless otherwise speci?ed. thermal characteristics note 1. device mounted on an fr4 printed-circuit board. symbol parameter conditions min. max. unit per diode v f forward voltage see fig.3 i f =10ma - 750 mv i f =50ma - 840 mv i f = 100 ma - 900 mv i f = 200 ma - 1v i f = 400 ma - 1.25 v i r reverse current see fig.5 v r =90v - 100 na v r =90v; t j = 150 c - 100 m a v (br)r reverse avalanche breakdown voltage i r = 1 ma 120 170 v c d diode capacitance f = 1 mhz; v r = 0; see fig.6 - 35 pf t rr reverse recovery time when switched from i f = 30 ma to i r = 30 ma; r l = 100 w ; measured at i r = 3 ma; see fig.7 - 50 ns symbol parameter conditions value unit r th j-tp thermal resistance from junction to tie-point 360 k/w r th j-a thermal resistance from junction to ambient note 1 500 k/w
2001 oct 10 5 philips semiconductors product speci?cation general purpose controlled avalanche (double) diodes bas29; bas31; bas35 graphical data device mounted on an fr4 printed-circuit board. (1) single diode loaded. (2) double diode loaded. handbook, halfpage 0 100 (1) (2) 200 300 200 0 100 mbg440 t amb ( o c) i f (ma) fig.2 maximum permissible continuous forward current as a function of ambient temperature. fig.3 forward current as a function of forward voltage. handbook, halfpage 02 600 0 200 400 mbh280 1 if (ma) v f (v) (1) (2) (3) (1) t j = 150 c; typical values. (2) t j =25 c; typical values. (3) t j =25 c; maximum values. handbook, full pagewidth mbh327 10 t p ( m s) 1 i fsm (a) 10 2 10 - 1 10 4 10 2 10 3 10 1 fig.4 maximum permissible non-repetitive peak forward current as a function of pulse duration. based on square wave currents. t j =25 c prior to surge.
2001 oct 10 6 philips semiconductors product speci?cation general purpose controlled avalanche (double) diodes bas29; bas31; bas35 fig.5 reverse current as a function of junction temperature. handbook, halfpage 10 200 0 mbh282 100 t j ( o c) i r ( m a) 1 10 - 2 10 - 1 10 2 (1) (2) (1) v r = 90 v; maximum values. (2) v r = 90 v; typical values. fig.6 diode capacitance as a function of reverse voltage; typical values. f = 1 mhz; t j =25 c. handbook, halfpage 0102030 v r (v) 40 c d (pf) 30 10 0 20 mgd003 handbook, full pagewidth t rr (1) i f t output signal t r t t p 10% 90% v r input signal v = v i x r rf s r = 50 s w i f d.u.t. r = 50 i w sampling oscilloscope mga881 fig.7 reverse recovery voltage test circuit and waveforms. (1) i r = 3 ma.
2001 oct 10 7 philips semiconductors product speci?cation general purpose controlled avalanche (double) diodes bas29; bas31; bas35 package outline unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 97-02-28 99-09-13 iec jedec eiaj mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 to-236ab b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface mounted package; 3 leads sot23
2001 oct 10 8 philips semiconductors product speci?cation general purpose controlled avalanche (double) diodes bas29; bas31; bas35 data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. data sheet status (1) product status (2) definitions objective data development this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. preliminary data quali?cation this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. product data production this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change noti?cation (cpcn) procedure snw-sq-650a. definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 oct 10 9 philips semiconductors product speci?cation general purpose controlled avalanche (double) diodes bas29; bas31; bas35 notes
2001 oct 10 10 philips semiconductors product speci?cation general purpose controlled avalanche (double) diodes bas29; bas31; bas35 notes
2001 oct 10 11 philips semiconductors product speci?cation general purpose controlled avalanche (double) diodes bas29; bas31; bas35 notes
? koninklijke philips electronics n.v. 2001 sca73 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands 613514/04/pp 12 date of release: 2001 oct 10 document order number: 9397 750 08758

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