mitsubishi semiconductor MGFC47B3436B 3.4 - 3.6ghz band 50w internally matched gaas fet description the MGFC47B3436B is an internally impedance-matchedgaas power fet especially designed for use in 3.4 - 3.6 ghz band amplifiers.the hermetically sealed metal-ceramic package guarantees high reliability. features class ab operation internally matched to 50(ohm) system high output power po(sat) = 50w (typ.) @ f=3.4 - 3.6 ghz high power gain gp = 10 db (typ.) @ f=3.4 - 3.6 ghz distortion evm = 2.0% (typ.) @ f=3.4 - 3.6ghz, po=37dbm recommended bias conditions vds = 12 (v) id = 1.5 (a) rg=10(ohm) absolute maximum ratings (ta=25deg.c) symbol parameter ratings unit vgdo gate to drain voltage -15 v vgso gate to source voltage -10 v maxid maximum drain current 12 a pt *1 total power dissipation 115 w tch channel temperature 175 deg.c tstg storage temperature -55 / +150 deg.c *1 : tc=25deg.c electrical caracteristics (ta=25deg.c) symbol parameter test conditions limits unit min. typ. max. vgs(off) gate to source cut-off voltage vds = 3v , id = 100ma -0.5 - -3.0 v po(sat) output power vds=12v, id(rf off)=1.5a, f=3.4-3.6ghz - 47 - dbm gp power gain 9.0 10.5 - db id drain current vds=12v, id(rf off)=1.5a, f=3.4-3.6ghz - 2.0 3 a evm *2 error vector magnitude pout=37dbm - 1.5 2.5 % rth(ch-c) *3 thermal resistance delta vf method - 0.65 1.2 deg.c/w *2 :wimax downlink, 64qam-3/4, channel bandwidth: 6mhz*3 : channel-case ( 1 / 4 ) spe. 2007 mitsubishi electric outline drawinggf-60 preliminary notice: this is not a final specification.some parametric limits are subject to change. < keep safety first in your circuit designs! > mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap.
mitsubishi semiconductor MGFC47B3436B 3.4 - 3.6ghz band 50w internally matched gaas fet evm(@wimax) vs . pout characteristics test condition vds=12v, idq=1.5a, ta=25deg.c wimax : 64qam-3/4,bw=7mhz freq. = 3.4ghz freq. = 3.5ghz freq. = 3.6ghz evm(@wimax) vs . freq. characteristics test condition vds=12v, idq=1.5a, pout=37dbm, ta=25deg.c wimax : 64qam-3/4,bw=7mhz ( 2 / 4 ) sep. 2007 mitsubishi electric preliminary notice: this is not a final specification.some parametric limits are subject to change. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 30 32 34 36 38 40 pout bm) gp b) evm(%) 0 5 10 15 20 25 30 35 40 45 50 55 60 65 ed(%) evm gp ed 0 1 2 3 4 5 6 7 8 9 10 11 12 13 30 32 34 36 38 40 pout bm) gp b) evm(%) 0 5 10 15 20 25 30 35 40 45 50 55 60 65 ed(%) evm gp ed 0 1 2 3 4 5 6 7 8 9 10 11 12 13 30 32 34 36 38 40 pout bm) gp b) evm(%) 0 5 10 15 20 25 30 35 40 45 50 55 60 65 ed(%) evm gp ed evm@pout=37.0dbm 0 0.5 1 1.5 2 2.5 3 3.3 3.4 3.5 3.6 3.7 3.8 3.9 freq(ghz) evm(%)
mitsubishi semiconductor MGFC47B3436B 3.4 - 3.6ghz band 50w internally matched gaas fet ( 3 / 4 ) sep. 2007 rf test fixture mitsubishi electric preliminary notice: this is not a final specification.some parametric limits are subject to change. c1,c2,c7,c8=gr708 8pf c3,c5=1000pf c4=100nf c6=470nf r1= 10ohm r2=cr10 51ohm board material:teflon t=0.8mm specific dielectric constant=2.6 unit:(mm)
mitsubishi semiconductor MGFC47B3436B 3.4 - 3.6ghz band 50w internally matched gaas fet requests regarding safety designs matters of importance when using these materials 1. 2. 3. 4. 5.6. 7. 8. 9. ( 4 / 4 ) sep. 2007 the data, graphs, charts, programs, algorithms and all other information described in these materials werecurrent at the issue of these materials, with mitsubishi electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. before purchasing mitsubishi electric semiconductor products, therefore, please obtain the latest available information from mitsubishi electric directly or an authorized dealer. every possible effort has been made to ensure that the information described in these materials is fullyaccurate. however, mitsubishi electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. when using the product data, technical contents indicated on the graphs, charts, programs or algorithmsdescribed in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. mitsubishi electric does not accept responsibility for the propriety of application. please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to mitsubishi electric or an authorized dealer. the products described in these materials, with the exception of special mention concerning use andreliability, have been designed and manufactured with the purpose of use in general electronic machinery. accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. when considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with mitsubishi electric directly or an authorized dealer. when considering use of products for purposes other than the specific applications described in these materials, please inquire at mitsubishi electric or an authorized dealer. the prior consent of mitsubishi electric in writing is required for any reprinting or reproduction of these mitsubishi electric constantly strives to raise the level of its quality and reliability. despite these concerted efforts,however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. in view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. these materials are designed as reference materials to ensure that all customers purchase mitsubishielectric semiconductors best suited to their specific use applications. please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by mitsubishi electric corporation. mitsubishi electric does not assume responsibility for damages resulting from the use of product data,graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. mitsubishi electric preliminary notice: this is not a final specification.some parametric limits are subject to change.
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