ksp44/45 ? npn epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksp44/45 rev. a3 1 october 2012 ksp44/45 npn epitaxial silicon transistor features ? high-voltage transistor ? collector-emitter voltage: v ceo = ksp44: 400v ksp45: 350v ? collector power dissipation: p c (max) = 625mw ordering information absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. thermal characteristics part number top mark package packing method ksp44bu ksp44 to-92 3l bulk ksp44ta ksp44 to-92 3l ammo ksp44tf ksp44 to-92 3l tape and reel ksp45ta ksp45 to-92 3l ammo symbol parameter value unit v cbo collector-base voltage : ksp44 : ksp45 500 400 v v v ceo collector-emitter voltage : ksp44 : ksp45 400 350 v v v ebo emitter-base voltage 6 v i c collector current 300 ma t j junction temperature 150 ? c t stg storage temperature -55 to 150 ? c symbol parameter value unit p c collector power dissipation (t a = 25 ? c) 625 mw p c collector power dissipation (t c = 25 ? c) 1.5 w r ? jc thermal resistance, junction to case 83.3 ? c/w r ? ja thermal resistance, junction to ambient 200 ? c/w 1. emitter 2. base 3. collector to-92 1
ksp44/45 ? npn epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksp44/45 rev. a3 2 electrical characteristics values are at t a = 25 ? c unless otherwise noted . note: 1. pulse test: pw ?? 300 ? s, duty cycle ?? 2%. symbol parameter conditions min. max. unit bv cbo collector-base breakdown voltage : ksp44 : ksp45 i c = 100 ? a, i b = 0 500 400 v v bv ceo collector -emitter breakdown voltage (1) : ksp44 : ksp45 i c = 1ma, i b = 0 400 350 v v bv ebo emitter-base breakdown voltage i e = 100 ? a, i c = 0 6 v i cbo collector cut-off current : ksp44 : ksp45 v cb = 400v, i e = 0 v cb = 320v, i e = 0 0.1 0.1 ? a ? a i ces collector cut-off current : ksp44 : ksp45 v ce = 400v, i b = 0 v ce = 320v, i b = 0 0.5 0.5 ? a ? a i ebo emitter cut-off current v eb = 4v, i c = 0 0.1 ? a h fe dc current gain (1) v ce = 10v, i c = 1ma v ce = 10v, i c = 10ma v ce = 10v, i c = 50ma v ce = 10v, i c = 100ma 40 50 45 40 200 v ce (sat) collector-emitter saturation voltage (1) i c = 1ma, i b = 0.1ma i c = 10ma, i b = 1ma i c = 50ma, i b = 5ma 0.4 0.5 0.75 v v v v be (sat) base-emitter saturation voltage (1) i c = 10ma, i b = 1ma 0.75 v c ob output capacitance v cb = 20v, i e = 0, f = 1mhz 7pf
ksp44/45 ? npn epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksp44/45 rev. a3 3 typical performance characteristics figure 1. dc current gain figure 2. turn-on switching times figure 3. turn-off switching times figure 4. capacitance figure 5. on voltage figure 6. collector saturation region 1 10 100 1000 10000 -40 -20 0 20 40 60 80 100 120 140 160 v ce =10v h fe , dc current gain i c [ma], collector current 1 10 100 0.1 1 10 td tf v cc =150v i c /i b =10 t a =25 v be (off)=4v t[us], time i c [ma], collector current 110100 0.1 1 10 100 tf ts v cc =150v i c /i b =10 t a =25 t[us], time i c [ma], collector current 0.1 1 10 100 1000 1 10 100 1000 cob c ib t a =25 f=1mhz c ib [pf],c ob [pf], capacitance v cb [v], collector-base voltage 0.1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 v ce (sat)@i c /i b =10 v be (on) @v ce =10v v be (sat) @i c /i b =10 t a =25 [v], voltage i c [ma], collector current 10 100 1000 10000 100000 0.0 0.1 0.2 0.3 0.4 0.5 i c =50ma i c =10ma i c =1ma t a =25 v ce [v] collector emitter voltage i c [ma], collector current
ksp44/45 ? npn epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksp44/45 rev. a3 4 typical performance characteristics (continued) figure 7. high-frequency current gain figure 8. safe operating area 0.1 1 10 100 1000 0.1 1 10 100 v ce =10v f=10mhz t a =25 h fe , small signal current gain i c [ma], collector current 1 10 100 1000 10000 1 10 100 1000 10000 100000 t c = 2 5 100us 1s valid for duty cycle 10% mspa44 t a = 2 5 1ms i c [ma], collector current v ce [v], collector-emitter voltage
ksp44/45 ? npn epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksp44/45 rev. a3 5 physical dimensions figure 9. 3-lead, to-92, molded, standard straight lead, bulk type package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the dra wing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packagi ng area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/products/discrete/pdf/to92pdd_tr.pdf . d to-92
ksp44/45 ? npn epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksp44/45 rev. a3 6 physical dimensions (continued) figure 10. 3-lead, to-92, molded, 0.2 in line spacing lead form, ammo, tape and reel type package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online pac kaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ . for current tape and reel specifications, visi t fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/products/discrete/pdf/to92pdd_tr.pdf . d to-92
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