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  vishay siliconix dg458, dg459 document number: 70064 s11-1029?rev. h, 23-may-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fault-protected single 8-ch/diffe rential 4-ch analog multiplexers features ? fault and overvoltage protection ? all channels off when power off ? latchup-proof ? fast switching - t a : 200 ns ? break-before-make switching ? low on-resistance: 180 w ? low power consumption: 3 mw ? ttl and cmos compatible inputs benefits ? improved ruggedness ? power loss protection ? prevents adjacent channel crosstalk ? standard logic interface ? superior accuracy ? fast settling time applications ? data acquisition systems ? industrial process control systems ? avionics test equipment ? high-rel control systems ? telemetry description the dg458 and dg459 are 8-channel single-ended and 4-channel differential analog multiplexers, respectively, incorporating fault protection. a series n-p-n mosfet structure provides device and signal-source protection in the event of power loss or overvoltages. under fault conditions the multiplexer input (or output) appears as an open circuit and only a few nanoamperes of leakage current will flow. this protects not only the multiplexer and the circuitry following it, but also protects the sensors or signal sources which drive the multiplexer. the dg458 and dg459 can withstand continuous overvoltage inputs up to 35 v. all digital inputs have ttl compatible logic thresholds. break-before-make operation prevents channel-to-c hannel interference. the dg458 and dg459 are improved pin-compatible replacements for hi-508a/509a and max358/359 multiplexers. functional block diagram and pin configuration * pb containing terminations are not rohs compliant, exemptions may apply s 3 a 0 s 6 d s 4 a 1 s 8 s 7 en dual-in-line a 2 v- gnd s 1 v+ s 2 s 5 decoders/drivers 1 2 3 4 5 6 7 16 15 14 13 12 11 10 top view 89 dg458 9 a 0 d a a 1 d b en gnd v- v+ s 1a s 1b s 2a s 2b s 3a s 3b s 4a s 4b dual-in-line decoders/drivers 1 2 3 4 5 6 7 16 15 14 13 12 11 10 top view 8 dg459
www.vishay.com 2 document number: 70064 s11-1029?rev. h, 23-may-11 vishay siliconix dg458, dg459 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thru tables and ordering information logic "0" = v al ?? 0.8 v logic "1" = v ah ?? 2.4 v x = don?t care notes: a. all leads soldered or welded to pc board. b. derate 6.3 mw/c above 75 c. c. derate 12 mw/c above 75 c. d. derate 10 mw/c above 75 c. truth table - dg458 a 2 a 1 a 0 en on switch x x x 0 none 0 0 0 1 1 0 0 1 1 2 0 1 0 1 3 0 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8 truth table - dg459 a 1 a 0 en on switch x x 0 none 0 0 1 1 0 1 1 2 1 0 1 3 1 1 1 4 ordering information temp range package part number - 40 to 85 c 16-pin plastic dip dg458dj dg458dj-e3 dg459dj dg459dj-e3 absolute maximum ratings parameter limit unit v+ to v- 44 v v+ to gnd 22 v- to gnd - 25 v en , v a digital input (v-) - 4 to (v+) + 4 v s , analog input overvoltage with power on (v-) - 20 to (v+) + 20 v s , analog input overvoltage with power off - 35 to + 35 continuous current, s or d 20 ma peak current, s or d (pulsed at 1 ms, 10 % duty cycle max) 40 storage temperature (ak suffix) - 65 to 150 c (dj suffix) - 65 to 125 power dissipation (package) a 16-pin plastic dip b 600 mw 16-pin cerdip c 1000 lcc-20 d 1000
document number: 70064 s11-1029?rev. h, 23-may-11 www.vishay.com 3 vishay siliconix dg458, dg459 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications a parameter symbol test conditions unless otherwise specified v+ = 15 v, v- = - 15 v v al = 0.8 v, v ah = 2.4 v f temp. b typ. c a suffix - 55 c to 125 c d suffix - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - 10 10 - 10 10 v drain-source on-resistance r ds(on) v d = 9.5 v, i s = - 400 a room full 0.45 1.2 1.5 1.5 1.8 k ? v d = 5 v, i s = - 400 a room 180 400 400 ? r ds(on) matching between channels h ? r ds(on) v d = 0 v, i s = - 400 a room 6 % source off leakage current i s(off) v en = 0 v, v d = 10 v v s = 10 v room full 0.03 - 0.5 - 50 0.5 50 - 1 - 20 1 20 na drain off leakage current i d(off) v en = 0 v v d = 10 v v s = 10 v dg458 room full 0.1 - 1 - 200 1 200 - 1 - 50 1 50 dg459 room full 0.1 - 1 - 100 1 100 - 2 - 25 2 25 differential off drain leakage current i diff dg459 only room - 50 50 - 20 20 drain on leakage current i d(on) v s = v d = 10 v dg458 room full 0.1 - 2 - 200 2 200 - 5 - 50 5 50 dg459 room full 0.05 - 2 - 100 2 100 - 5 - 25 5 25 fault output leakage current (with overvoltage) i d(off) v s = 33 v, v d = 0 v see figure 1 room 0.02 na input leakage current (with overvoltage) i s(off) v s = 25 v, v d = 10 v, see figure 1 room 0.005 - 5 5 - 10 10 a input leakage current (with power supplies off) v s = 25 v, v sups = 0 v v d = a 0 , a 1 , a 2 , en = 0 v room 0.001 - 2 2 - 5 5 digital control input low threshold v al full 0.8 0.8 v input low threshold v al full 2.4 2.4 logic input control i a v a = 2.4 v or 0.8 v full - 1 1 - 1 1 a
www.vishay.com 4 document number: 70064 s11-1029?rev. h, 23-may-11 vishay siliconix dg458, dg459 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. refer to process option flowchart. b. room = 25 c, full = as determined by the operating temperature suffix. c. typical values are for design aid only, no t guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data s heet. e. guaranteed by design, not subject to production test. f. v in = input voltage to perform proper function. g. when the analog signal exceeds the + 13.5 v or - 12 v,r ds(on) starts to rise until only leakage currents flow. r ds(on) max - r ds(on) min ( rr ds(on) ave ) stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications a parameter symbol test conditions unless otherwise specified v+ = 15 v, v- = - 15 v v al = 0.8 v, v ah = 2.4 v f temp. b typ. c a suffix - 55 c to 125 c d suffix - 40 c to 85 c unit min. d max. d min. d max. d dynamic characteristics transition time t a see figure 3 room 200 500 500 ns break-before-make interval t open see figure 4 room 45 10 10 enable turn-on time t on(en) see figure 5 room full 140 250 500 250 500 enable turn-off time t off(en) room full 50 250 500 250 500 settling time t s to 0.1 % room 0.5 s to 0.01 % room 1.5 off isolation oirr v en = 0 v, r l = 1 k ? c l = 15 pf, v s = 3 v rms f = 100 khz room 90 db logic input capacitance c in f = 1 mhz room 5 pf source off capacitance c s(off) room 5 drain off capacitance c d(off) dg458 room 15 dg459 room 10 drain on capacitance c d(on) dg458 room 40 dg459 room 35 power supplies positive supply current i+ v en = 5 or 0 v, v a = 0 v room full 0.05 0.1 0.2 0.1 0.2 ma negative supply current i- room full - 0.01 - 0.1 - 0.2 - 0.1 - 0.2 power supply range for continuous operation room 4.5 18 4.5 18 v x 100 % h. ? r ds(on) =
document number: 70064 s11-1029?rev. h, 23-may-11 www.vishay.com 5 vishay siliconix dg458, dg459 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) input leakage vs. input voltage off-channel leakage currents vs. input voltage output leakage vs. off-channel overvoltage v s ? source v oltage (v) ? source current i s - 50 0 5 0 1 ma 100 a 10 a 1 a 100 na 10 na 1 na 100 pa 10 pa 1 pa - 40 - 30 - 20 - 10 10 20 30 40 operating range v+ = v- = 0 v ? source current i s v s ? source v oltage (v) - 50 0 5 0 - 40 - 30 - 20 - 10 10 20 30 40 operating range v+ = 15 v v- = - 15 v 1 ma 100 a 10 a 1 a 100 na 10 na 1 na 100 pa 10 pa 1 pa ? drain current i d v s ? source voltage (v) 1 na 0.1 pa - 50 - 40 50 100 pa 10 pa 1 pa - 30 - 20 - 10 0 10 20 30 40 v+ = 15 v v- = - 15 v r ds(on) vs. v d and temperature leakage currents vs. temperature r ds(on) vs. input voltage v d ? drain v oltage (v) 700 - 10 0 1 0 600 500 400 0 300 200 100 5.0 - 5.0 2.5 - 2.5 - 7.5 7.5 125 c - 55 c v+ = 15 v v- = - 15 v 85 c 25 c 0 c r ds(on) ? drain-source on-resistance ( ) (na) i , i sd temperature (c) 10 - 55 - 35 125 1 0.10 0.01 - 15 5 25 45 65 85 105 i s(off) i d(on) v+ = 15 v v- = - 15 v v s , v d = 10 v i d(off) v s ? source v oltage (v) 2000 400 0 0 25 20 15 10 5 - 20 - 15 - 10 - 5 800 1200 1600 5 v supplies 10 v 15 v 20 v r ds(on) drain-source on-resistance ( )
www.vishay.com 6 document number: 70064 s11-1029?rev. h, 23-may-11 vishay siliconix dg458, dg459 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) leakage current vs. v s , v d switching times (t trans , t on , t off ) vs. v supplies switching times vs. temperature sd ? leakage (pa) i , i v d or v s ? drain or source voltage (v) 25 - 15 - 25 115 12 9 6 3 - 12 - 9 - 6 - 3 - 5 5 15 - 15 20 - 20 - 10 0 10 i d(on) i s(off) i d(off) v+ = 15 v v- = - 15 v t ime (ns) v+, v- ? positive and negative supplies (v) 240 200 160 120 80 40 5 10 15 20 t tra n s t on(e n) t off(e n ) v in = 2 v temperature (c) time (ns) 280 240 0 200 160 120 80 40 - 55 - 35 125 - 15 5 25 45 65 85 105 t open v+ = 15 v v- = - 15 v t trans t on(en) t off(en) off isolation and x talk vs. frequency q inj vs. v s logic input switching threshold vs. v supplies f ? frequency (hz) (db) - 110 10 k 100 k 10 m - 100 - 90 - 50 - 80 - 70 - 60 1 m v+ = 15 v v- = - 15 v r l = 1 k off isolation crosstalk v s ? source voltage (v) charge injection (pc) 0 - 10 - 30 - 40 - 60 - 10 - 5 0 5 10 - 50 - 20 v+ = 15 v v- = - 15 v c l = 1 nf c l = 10 nf v+, supply (v) (v) th v 2.5 5 7.5 10 12.5 15 17.5 20 3.0 2.0 1.5 1.0 0.5 0 2.5
document number: 70064 s11-1029?rev. h, 23-may-11 www.vishay.com 7 vishay siliconix dg458, dg459 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schematic diagram (typical channel) test circuits gnd s 1 a 0 d s n v- decode/ drive level shift v- v+ v ref v+ v- a x en v+ v- v+ figure 2. analog input overvoltage a + 15 v i d(off) v d d v+ v- - 15 v s n v s i s(off) a figure 3. transition time s 1b s 8b a 2 d b a 1 * a 0 * = s 1a - s 8a , s 2b - s 7b , d a 50 1 m v o 5 v 5 v + 2.4 v + 15 v - 15 v en v+ v- gnd 35 pf 50 % + 5 v - 5 v 90 % 0 v 3 v logic input t a switch output v o dg458
www.vishay.com 8 document number: 70064 s11-1029?rev. h, 23-may-11 vishay siliconix dg458, dg459 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits figure 4. break-before-make time a 2 d b , d s 2 - s 7 1 k v o a 1 50 a 0 en v+ gnd v- 35 pf - 15 v + 15 v + 2.4 v dg458 logic input t open 0 v 3 v 50 % 0 v v o switch output s 1 , s 8 + 5 v figure 5. enable delay s 1 s 2 - s 8 a 0 a 1 a 2 50 1 k v o en v+ gnd v- d 35 pf - 15 v + 15 v dg458 0 v 3 v 0 v 90 % 50 % enable input v o switch output v s t on(en) t of + 5 v
document number: 70064 s11-1029?rev. h, 23-may-11 www.vishay.com 9 vishay siliconix dg458, dg459 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 detailed description the vishay siliconix dg458 and dg459 multiplexers are fully fault- and overvoltage- protected for continuous input voltages up to 35 v whether or not voltage is applied to the power supply pins (v+, v-). thes e multiplexers are built on a high-voltage junction-isolated silicon-gate cmos process. two n-channel and one p-channel mosfets are connected in series to form each channel (figure 1). within the normal analog signal range ( 10 v), the r ds(on) variation as a function of analog signal voltage is comparable to that of the classic parallel n-mos and p-mos switches. when the analog signal approaches or exceeds either supply rail, even for an on-channel, one of the three series mosfets gets cut-off, providing inherent protection against overvoltages even if the multiplexer power supply voltages are lost. this protection is good up to the breakdown voltage of the respective series mo sfets. under fault conditions only sub microamp leakage currents can flow in or out of the multiplexer. this not only provides protection for the multiplexer and succeeding circuitry, but it allows normal, undisturbed operation of all other channels. additionally, in case of power loss to the mult iplexer, the loading caused on the transducers and signal sources is insignificant, therefore redundant multiplexers can be used on critical applications such as telemetry and avionics. vishay siliconix maintains worldwide manufacturing capability. pro ducts may be manufactured at on e of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?70064 . figure 5. overvoltage protection - 15 v - 15 v + 15 v - 35 v overvoltage + 35 v overvoltage q 1 q 2 q 3 n-channel mosfet is on p-channel mosfet is off n-channel mosfet is off - 15 v + 15 v d s g d s g d s g - 35 v overvoltage + 35 v overvoltage q 1 q 2 q 3 - 35 v n-channel mosfet is on p-channel mosfet is off n-channel mosfet is off (b) overvoltage with multiplexer power on (a) overvoltage with multiplexer power off
e 1 e q 1 a l a 1 e 1 b b 1 s c e a d 15 max 12345678 16 15 14 13 12 11 10 9 package information vishay siliconix document number: 71261 06-jul-01 www.vishay.com 1 
  

 
 dim min max min max a 3.81 5.08 0.150 0.200 a 1 0.38 1.27 0.015 0.050 b 0.38 0.51 0.015 0.020 b 1 0.89 1.65 0.035 0.065 c 0.20 0.30 0.008 0.012 d 18.93 21.33 0.745 0.840 e 7.62 8.26 0.300 0.325 e 1 5.59 7.11 0.220 0.280 e 1 2.29 2.79 0.090 0.110 e a 7.37 7.87 0.290 0.310 l 2.79 3.81 0.110 0.150 q 1 1.27 2.03 0.050 0.080 s 0.38 1.52 .015 0.060 ecn: s-03946?rev. d, 09-jul-01 dwg: 5482
e 1 e q 1 a l a 1 e 1 b b 1 l 1 s c e a d 12 3 4 5 6 7 8 16 15 14 13 12 11 10 9 package information vishay siliconix document number: 71282 03-jul-01 www.vishay.com 1 
     dim min max min max a 4.06 5.08 0.160 0.200 a 1 0.51 1.14 0.020 0.045 b 0.38 0.51 0.015 0.020 b 1 1.14 1.65 0.045 0.065 c 0.20 0.30 0.008 0.012 d 19.05 19.56 0.750 0.770 e 7.62 8.26 0.300 0.325 e 1 6.60 7.62 0.260 0.300 e 1 2.54 bsc 0.100 bsc e a 7.62 bsc 0.300 bsc l 3.18 3.81 0.125 0.150 l 1 3.81 5.08 0.150 0.200 q 1 1.27 2.16 0.050 0.085 s 0.38 1.14 0.015 0.045 0 15 0 15 ecn: s-03946?rev. g, 09-jul-01 dwg: 5403
d l 1 e b l e a 1 a 28 1 2 packaging information vishay siliconix document number: 71290 02-jul-01 www.vishay.com 1 

     dim min max min max  1.37 2.24 0.054 0.088   1.63 2.54 0.064 0.100  0.56 0.71 0.022 0.028  8.69 9.09 0.342 0.358  8.69 9.09 0.442 0.358  1.27 bsc 0.050 bsc  1.14 1.40 0.045 0.055   1.96 2.36 0.077 0.093 ecn: s-03946?rev. b, 09-jul-01 dwg: 5321
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.


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