rev. 0.9, 16-may-2012 HYESD2045FN2 single channel low capacitance esd protection diode array features application pin configuration mechanical information fig. 1 C forward current derating curve ambient temperature ( ) 25 50 75 100 125 150 175 single phase half wave 60hz fig. 2 C maximum non - 1 2 5 10 single 1 4 10 20 100 tj = 25 c f = 1 mhz 0 0.2 0.4 0.6 0.8 0.0 rs1a - rs1g rs1j - sr1m HYESD2045FN2 is a single - channel ultra low capacitance rail clamp esd protection diode array which includes surge rated to protect high speed data lines. each channel consists of a pair of esd diodes that steer positive or negative esd current to either the positive or negative rail. typical application, the negative rail pin is connected with system ground. the positive esd current is steered to the ground through the internal zener diode to protect the power supply of the circuit protected . ? single channel esd protection ? provides esd protection to iec61000 - 4 - 2 level 4 - + 15kv air discharge - + 10kv contact discharge ? ultra low capacitance 0.9pf ( max ) ? low clamping voltage & 5v operation voltage ? cellular handsets & accessories ? digital cameras ? flat panel monitors / tvs ? cellular handsets & accessories ? notebooks ? case : dfn - 2 - 1.0x0.6x0.5 package ? pb - free, halogen free, rohs/weee complian HYESD2045FN2 dfn - 2 2 1
unit w a v v symbol min typ max unit v rwm - - 5 v v br 6 - v i r - - 1 ua v c - 8.5 12 v v c - 1.8 - v c j - 0.5 0.9 pf rev. 0.9, 16-may-2012 symbol value parameter test condition v esd + 10kv t stg i pp -55 to +125 peak pulse power ( 8 / 20 s ) peak pulse current ( 8 / 20 s ) v rwm = 5 v , t = 25 c ; i/o pin to gnd -55 to +150 esd per iec 61000-4-2(air) esd per iec 61000-4-2(contact) i pp =1a, t p =8/20us; negative pulse; i/o pin to gnd v r =0v, f=1mhz; i/o pin to gnd negative clamping voltage junction capacitance between i/o and gnd storage temperature range i/o pin to gnd electrical characteristics ( t c =25 i br =1ma; i/o pin to gnd t op positive clamping voltage reverse leakage current reverse breakdown voltage i pp =1a, t p =8/20us; positive pulse; i/o pin to gnd reverse working voltage HYESD2045FN2 operating temperature range p pp maximum rating and thermal characteristics ( t c =25 parameter 5 v esd + 15kv 120
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