pa ckage dimensions schematic 9/8/04 p age 1 of 5 ?2002 fairchild semiconductor corporation qeb363 subminiature plastic infrared emitting diode features ? -3/4 (2mm) surface mount package ? ape & reel option (see tape & reel speci?ations) lead form options: gullwing, yoke, z-bend narrow emission angle, 24 ? av elength = 940 nm, gaas clear water lens matched photosensor: qsb363 high radiant intensity 0.074 (1.9) 0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3) 0.055 (1.4) 0.024 (0.6) 0.016 (0.4) 0.087 (2.2) 0.071 (1.8) 0.019 (0.5) 0.012 (0.3) 0.276 (7.0) min 0.024 (0.6) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) cathode anode cathode notes: 1. dimensions are in inches (mm). 2. tolerance of ?.010 (.25) on all non nominal dimensions unless otherwise speci?d.
qeb363 9/8/04 p age 2 of 5 ?2002 fairchild semiconductor corporation subminiature plastic infrared emitting diode 1. derate power dissipation linearly 1.33 mw/? above 25?. 2. rma ?x is recommended. 3. methanol or isopropyl alcohols are recommended as cleaning agents. 4. soldering iron 1/16" (1.6mm) minimum from housing. absolute maximum ratings (t a = 25? unless otherwise speci?d) p arameter symbol rating unit operating temperature t opr -40 to +100 ? storage temperature t stg -40 to +100 ? soldering temperature (iron) (2,3,4) t sol-i 240 for 5 sec ? soldering temperature (flow) (2,3) t sol-f 260 for 10 sec ? continuous forward current i f 50 ma reverse voltage v r 5v po w er dissipation (1) p d 100 mw electrical / optical characteristics (t a =25?) p arameter test conditions symbol min typ max units p eak emission wavelength i f = 100 ma p 940 nm emission angle i f = 100 ma ?2 deg. f orward voltage i f = 100 ma, t p = 20 ms v f 1.6 v reverse current v r = 5 v i r 100 ? radiant intensity i f = 100 ma, tp = 20 ms i e 8 mw/sr rise time i f = 100 ma t r ? s f all time t p = 20 ms t f ? s
9/8/04 p age 3 of 5 ?2002 fairchild semiconductor corporation qeb363 subminiature plastic infrared emitting diode typical performance curves 200 980 500 200 100 20 2 1 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 50 10 5 960 940 920 900 20 10 5 2 1 0.1 -25 0 25 50 75 100 0.2 0.5 -25 0 010 10 20 20 30 30 40 0.6 0.4 0.2 0 0.2 0.4 0.6 50 60 70 80 90 40 50 60 70 80 90 25 50 75 100 100 80 60 40 20 0 880 900 920 940 960 980 1000 1020 1040 160 120 80 40 0 -25 0 25 50 75 85 100 ambient temperature t a (?c) fig. 1 maximum forward current vs. t emperature fig. 3 peak emission wavelength vs. ambient temperature fig. 4 forward current vs. forward voltage fig. 2 relative radiant intensity vs. wa velength fig. 5 relative radiant flux vs. ambient temperature fig. 6 relative radiant intensity vs. angular displacement forward current i f (ma) ambient temperature t a (?c) p eak emission wavelength (nm) ambient temperature t a (?c) relative radiant flux (%) ambient temperature t a (?c) relative radiant intensity forward voltage v f (v) forward current i f (ma) wa velength (nm) relative radiant intensity (%) i f = 20 ma t a = 25?c
qeb363 9/8/04 p age 4 of 5 ?2002 fairchild semiconductor corporation subminiature plastic infrared emitting diode surface mount options t-3/4 packages 0.074 (1.9) 0.055 (1.4) 0.087 (2.2) 0.071 (1.8) 0.118 (3.0) 0.102 (2.6) 0.020 (0.5) 0.016 (0.4) 0.043 (1.1) 0.098 (2.5) 0.051 (1.3) 0.141 (3.6) 0.031 (0.8) anode 0.008 (0.2) 0.283 (7.2) 0.074 (1.9) 0.106 (2.7) 0.091 (2.3) 0.055 (1.4) 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) .118 (3.0) .102 (2.6) 0.166 (4.2) 0.020 (0.51) 0.016 (0.4) 0.078 (2.0) 0.043 (1.1) 0.005 (0.13) anode 0.074 (1.9) 0.106 (2.7) 0.091 (2.3) 0.055 (1.4) 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) .118 (3.0) .102 (2.6) 0.020 (0.5) 0.016 (0.4) 0.080 (2.0) 0.043 (1.1) 0.236 (6.0) 0.220 (5.6) 0.177 (4.5) 0.161 (4.1) 0.031 (0.8) anode 0.127 (3.25) 0.112 (2.85) features three lead forming options: gull wing, yoke and z- bend compatible with automatic placement equipment supplied on tape and reel or in bulk packaging compatible with vapor phase re?w solder processes notes: (applies to all package drawings) 1. dimensions are in inches (mm). 2. tolerance of ?.010 (.25) on all non nominal dimensions unless otherwise speci?d. z-bend lead configuration y oke lead configuration gull wing lead configuration
life support policy fairchild? products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. 9/8/04 p age 5 of 5 ?2002 fairchild semiconductor corporation qeb363 subminiature plastic infrared emitting diode
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