any changing of specification will not be informed individual PZT157 pnp transistor silicon planar high performance transistor rohs compliant product $ v x i i l [ r i 3 & v s h f l i l h v k d o r j h q o h d g i u h h http://www.secosgmbh.com elektronische bauelemente the PZT157 is designed for general purpose switching and amplifier applications. d e s c r i p ti o n * 3 amps continous current * -60 volt vceo * low saturation voltages features e l e c t r i c a l c h a r a c t e r i s t i c s t a m b = 2 5 unless otherw ise specified p a r a m e t e r s y m b o l m i n t y p . m a x u n i t e s t c o n d i t i o n s c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e b v c b o - - v i c =- 1 0 0 m a , i e = 0 i c =- 1 0 m a , i b = 0 i e =- 1 0 0 m a , i c = 0 v c b =- 6 0 v , i e = 0 v e b =- c = 0 i c =- v c e =- v , i c = v c e =- v , i c =- 1 0 0 m a , v c b =- 1 0 , f = 1 m h z , f = 1 00 m h z v c c =- 1 0 v , i c =- , i b 1 = i b 2 =- 0 m a * b v c e o -6 0 - - v b v e b o - - v i c b o - - -1 0 0 n a i e b o - - n a * v c e ( s a t ) 1 - * v c e ( s a t ) 2 - - - * v b e ( s a t ) v * v b e ( o n ) v * h f e 1 - * h f e 2 2 0 0 3 0 0 * h f e 3 - * h f e 4 - f t 1 0 0 - m h c o b - 4 0 - p f t o n t o f f - - - - z n s c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e e m i t t e r - b a s e b r e a k d o w n v o l t a g e c o l l e c t o r - b a s e c u t o f f c u r r e n t e m i t t e r - b a s e c u t o f f c u r r e n t c o l l e c t o r s a t u r a t i o n v o l t a g e b a s e s a t u r a t i o n v o l t a g e b a s e - e m i t t e r v o l t a g e d c c u r r e n t g a i n g a i n - b a n d w i d t h p r o d u c t o u t p u t c a p a c i t a n c e o n - t i m e o f f - t i m e t -8 0 -5 7 0 1 0 0 8 0 40 1 4 0 -450 -0 . 9 -0 . 8 -150 2 0 0 1 7 0 1 50 4 5 0 -1 0 0 -300 -600 -1 . 2 5 -1 . 0 3 0 mv 4 v , i 1 a , i b = -100ma i c =- 3 a , i b = -300ma i c =- 1 a , i b = -100ma i c =- 1 a , v c e =- 2 v 2 -5 0 m a v c e =- v , i c =- 2 5 0 0 m a v c e =- v , i c =- 2 1 a v c e =- v , i c =- 2 2 a 5 5 5 0 0 m a v c o * m easu r e d u n d er p u l s e c o n d i t i o n . p u l se w i d t h 300 s , du ty cy c l e 2% s p i ce p ar a met er d at a i s av ai l ab l e u p o n r e q u est f o r t h i s d ev i ce . m i llimeter m i llimeter m a x i m u m r a t i n g s * ( t a m b = 2 5 , u n l e s s o t h e r w i s e s p e c i f i e d ) c s y m b o l p a r a m e t e r v a l u e c o l l e c t o r c u r r e n t (dc) -6 -5 2 5 5 ~ + 1 5 0 -6 0 -8 0 -3 i c t s t g t j , j u n c t i o n a n d t o t a l p o w e r d i s s i p a t i o n v e b o p d e m i t t e r - b a s e v o l t a g e v a w s t o r a g e t e m p e r a t u r e - c o v c e o c o l l e c t o r - e m i t t e r v o l t a g e v v c b o c o l l e c t o r - b a s e v o l t a g e v u n i t s c o l l e c t o r c u r r e n t (pulse) o sot-223 01-jun-2002 rev. a page 1 of 2 ref. min. max. ref. min. max. a 6.70 7.30 b 1 3 c typ. c 2.90 3.10 j 2.30 ref. d 0.02 0.10 1 6.30 6.70 e 0 c 10 c 2 6.30 6.70 i 0.60 0.80 3 3.30 3.70 h 0.25 0.35 4 3.30 3.70 5 1.40 1.80 1 5 7 date code b c e ?? ?? m
pzt 15 7 p n p transistor silicon planar high performance transistor elektronische bauelemente any changing of specification will not be informed individual http://www.secosgmbh.com 01-jun-2002 rev. a page 2 of 2 c h a r a c t e r i s t i c s c u r v e
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