maximum ratings & thermal characteristics ratings at 25 ? ambient temperature unless otherwise specified. parameter symbol MBR30H35PT mbr30h45pt mbr30h50pt mbr30h60pt unit maximum repetitive peak reverse voltage v rrm 35 45 50 60 v maximum working peak reverse voltage v rwm 35 45 50 60 v maximum dc blocking voltage v dc 35 45 50 60 v maximum average forward rectified current (see fig. 1) i f(av) 30 a peak repetitive forward current per leg at t c = 155 ? (rated v r , square wave, 20 kh z ) i frm 30 a non-repetitive avalanche energy per leg at 25 c, i as = 4 a, l = 10 mh e as 80 mj peak forward surge current, 8.3 ms single half sine-wave i fsm 200 a superimposed on rated load (jedec method) peak repetitive reverse surge current (1) i rrm 2.0 1.0 a peak non-repetitive reverse energy (8/20 ? waveform) e rsm 30 20 mj electrostatic discharge capacitor voltage v c 25 kv human body model: c = 100 pf, r = 1.5 k ? thermal resistance from junction to case per leg r jc 1.4 ?/w voltage rate of change at (rated v r ) dv/dt 10,000 v/ s operating junction temperature range t j 65 to +175 ? storage temperature range t stg 65 to +175 ? features ?plastic package has underwriters laboratory flammability classifications 94 v-0 ?dual rectifier construction, positive center-tap ?metal silicon junction, majority carrier conduction ?high surge capability ?low forward voltage drop, low power loss and high efficiency ?for use in low voltage, high frequency inverters, free-wheeling, and polarity protection applications ?guardring for overvoltage protection ?rated for reverse surge and esd ?175 ? maximum operation junction temperature mechanical data case: jedec to-247ad molded plastic body terminals: lead solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250 ?/10 seconds, 0.17 (4.3 mm) from case polarity: as marked mounting position: any mounting torque: 10 in-lbs max. weight: 0.2 oz., 5.6 g pin 1 pin 3 case 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.142 (3.6) 0.138 (3.5) 0.170 (4.3) 0.086 (2.18) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.048 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0.840 (21.3) 0.820 (20.8) 1 2 3 0.078 ref (1.98) 0.203 (5.16) 0.193 (4.90) 10 typ. both sides 30 10 1 ref. 0.118 (3.0) 0.108 (2.7) 0.030 (0.76) 0.020 (0.51) both sides pin 2 to-247ad (to-3p) dimensions in inches and (millimeters) MBR30H35PT thru mbr30h60pt vishay semiconductors formerly general semiconductor document number 88792 www.vishay.com 4-feb-03 1 new product dual schottky barrier rectifier reverse voltage 35 to 60 v forward current 30 a
MBR30H35PT thru mbr30h60pt vishay semiconductors formerly general semiconductor www.vishay.com document number 88792 2 4-feb-03 electrical characteristics (t c = 25? unless otherwise noted) parameter symbol MBR30H35PT, mbr30h45pt mbr30h50pt, mbr30h60pt unit ty p m a x ty p m a x maximum instantaneous at i f = 20 a t j = 25 ? 0.66 0.74 forward voltage per leg (2) at i f = 20 a t j = 125 ? v f 0.54 0.58 0.60 0.63 v at i f = 30 a t j = 25 ? 0.73 0.83 at i f = 30 a t j =125 ? 0.62 0.66 0.66 0.70 maximum instantaneous reverse current t j = 25 ? 150 150 a at rated dc blocking voltage per leg (2) t j =125 ? i r 6.0 25 4.0 25 ma notes: (1) 2.0 s pulse width, f = 1.0 kh z (2) pulse test: 300 s pulse width, 1% duty cycle
ratings and characteristic curves (t a = 25? unless otherwise noted) 1 10 100 0 50 100 150 250 200 fig. 3 ?typical instantaneous forward characteristics per leg fig. 5 ?typical junction capacitance per leg fig. 6 ?typical transient thermal impedance per leg number of cycles at 60 h z reverse voltage (v) peak forward surge current (a) 0 10 20 30 40 025 50 75 100 125 150 175 fig. 1 ?forward current derating curve average forward current (a) case temperature ( c) fig. 2 ?maximum non-repetitive peak forward surge current per leg 0.01 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 10 100 instantaneous forward voltage (v) instantaneous forward current (a) fig. 4 ?typical reverse characteristics per leg instantaneous reverse leakage current (ma) percent of rated peak reverse voltage (%) t, pulse duration (sec.) transeint thermal impedance ( c/w) pf - junction capacitance 020 60 40 100 80 0.0001 0.001 0.1 0.01 1 10 100 0.1 1 100 10 1000 100 10000 0.01 0.1 0.1 1 1 10 10 MBR30H35PT -- mbr30h45pt mbr30h50pt -- mbr30h60pt t j = 150 c t j = 125 c t j = 25 c t j = t j max. 8.3ms single half sine-wave (jedec method) t j = 25 c f = 1.0 mh z vsig = 50mvp-p t j = 150 c t j = 125 c t j = 25 c MBR30H35PT -- mbr30h45pt mbr30h50pt -- mbr30h60pt MBR30H35PT thru mbr30h60pt vishay semiconductors formerly general semiconductor document number 88792 www.vishay.com 4-feb-03 3
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