d a t a sh eet product speci?cation supersedes data of 2001 sep 14 2003 oct 03 discrete semiconductors pemb10; PUMB10 pnp/pnp resistor-equipped transistors; r1 = 2.2 k w ,r2=47k w
2003 oct 03 2 philips semiconductors product speci?cation pnp/pnp resistor-equipped transistors; r1 = 2.2 k w , r2 = 47 k w pemb10; PUMB10 features built-in bias resistors simplified circuit design reduction of component count reduced pick and place costs. applications low current peripheral drivers replacement of general purpose transistors in digital applications control of ic inputs. description pnp/pnp resistor-equipped transistors (see simplified outline, symbol and pinning for package details). quick reference data symbol parameter typ. max. unit v ceo collector-emitter voltage -- 50 v i o output current (dc) -- 100 ma tr1 pnp --- tr2 pnp --- r1 bias resistor 2.2 - k w r2 bias resistor 47 - k w product overview note 1. * = p: made in hong kong. * = t: made in malaysia. * = w: made in china. simplified outline, symbol and pinning type number package marking code (1) npn/pnp complement npn/npn complement philips eiaj pemb10 sot666 - z5 pemd10 pemh10 PUMB10 sot363 sc-88 b*0 pumd10 pumh10 type number simplified outline and symbol pinning pin description pemb10 1 emitter tr1 PUMB10 2 base tr1 3 collector tr2 4 emitter tr2 5 base tr2 6 collector tr1 mam477 123 4 6 5 top view 654 123 r2 tr1 tr2 r1 r1 r2
2003 oct 03 3 philips semiconductors product speci?cation pnp/pnp resistor-equipped transistors; r1 = 2.2 k w , r2 = 47 k w pemb10; PUMB10 ordering information limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. device mounted on an fr4 printed-circuit board, single-sided copper, standard footprint. 2. reflow soldering is the only recommended soldering method. type number package name description version pemb10 - plastic surface mounted package; 6 leads sot666 PUMB10 - plastic surface mounted package; 6 leads sot363 symbol parameter conditions min. max. unit per transistor v cbo collector-base voltage open emitter -- 50 v v ceo collector-emitter voltage open base -- 50 v v ebo emitter-base voltage open collector -- 10 v v i input voltage positive - +5 v negative -- 12 v i o output current (dc) -- 100 ma i cm peak collector current -- 100 ma p tot total power dissipation t amb 25 c sot363 note 1 - 200 mw sot666 notes 1 and 2 - 200 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c per device p tot total power dissipation t amb 25 c sot363 note 1 - 300 mw sot666 notes 1 and 2 - 300 mw
2003 oct 03 4 philips semiconductors product speci?cation pnp/pnp resistor-equipped transistors; r1 = 2.2 k w , r2 = 47 k w pemb10; PUMB10 thermal characteristics notes 1. device mounted on an fr4 printed-circuit board, single-sided copper, standard footprint. 2. reflow soldering is the only recommended soldering method. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions value unit per transistor r th j-a thermal resistance from junction to ambient t amb 25 c sot363 note 1 625 k/w sot666 notes 1 and 2 625 k/w per device r th j-a thermal resistance from junction to ambient t amb 25 c sot363 note 1 416 k/w sot666 note 1 416 k/w symbol parameter conditions min. typ. max. unit i cbo collector-base cut-off current v cb = - 50 v; i e =0 --- 100 na i ceo collector-emitter cut-off current v ce = - 30 v; i b =0 --- 1 m a v ce = - 30 v; i b = 0; t j = 150 c --- 50 m a i ebo emitter-base cut-off current v eb = - 5 v; i c =0 --- 180 m a h fe dc current gain v ce = - 5 v; i c = - 10 ma 100 -- v cesat saturation voltage i c = - 5 ma; i b = - 0.25 ma --- 100 mv v i(off) input-off voltage v ce = - 5 v; i c = - 100 m a -- 0.6 - 0.5 v v i(on) input-on voltage v ce = - 0.3 v; i c = - 5ma - 1.1 - 0.75 - v r1 input resistor 1.54 2.2 2.86 k w resistor ratio 17 21 26 c c collector capacitance i e =i e = 0; v cb = - 10 v; f = 1 mhz -- 3pf r2 r1 ------- -
2003 oct 03 5 philips semiconductors product speci?cation pnp/pnp resistor-equipped transistors; r1 = 2.2 k w , r2 = 47 k w pemb10; PUMB10 package outlines unit b p cd e e 1 h e l p w references outline version european projection issue date 01-01-04 01-08-27 iec jedec eiaj mm 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 0.5 e 1.0 1.7 1.5 0.1 y 0.1 dimensions (mm are the original dimensions) 0.3 0.1 sot666 b p pin 1 index d e 1 e a l p detail x h e e a s 0 1 2 mm scale a 0.6 0.5 c x 123 4 5 6 plastic surface mounted package; 6 leads sot666 ys w m a
2003 oct 03 6 philips semiconductors product speci?cation pnp/pnp resistor-equipped transistors; r1 = 2.2 k w , r2 = 47 k w pemb10; PUMB10 references outline version european projection issue date iec jedec eiaj sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface mounted package; 6 leads sot363 unit a 1 max b p cd e e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 97-02-28
2003 oct 03 7 philips semiconductors product speci?cation pnp/pnp resistor-equipped transistors; r1 = 2.2 k w , r2 = 47 k w pemb10; PUMB10 data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2003 sca75 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands r75/02/pp 8 date of release: 2003 oct 03 document order number: 9397 750 11798
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