features symbol 10 sec steady state v ds v gs 0.5 0.5 0.5 0.45 i dm 0.38 0.28 0.24 0.18 t j , t stg symbol typ max t 10s 275 330 steady-state 360 450 steady-state r jl 300 350 drain-source voltage 20 8 -55 to 150 3 gate-source voltage p d c t a =70c i d pulsed drain current b power dissipation a t a =25c junction and storage temperature range w continuous drain current a, f units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v a maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a r ja c/w maximum junction-to-ambient a c/w parameter v ds (v) = 20v i d = 0.5 a (v gs = 4.5v) r ds(on) < 0.55 ? (v gs = 4.5v) r ds(on) < 0.68 ? (v gs = 2.5v) r ds(on) < 0.80 ? (v gs = 1.8v) the AO5404E uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. -rohs compliant d s g AO5404E n-channel enhancement mode field effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 20 v 1 t j =55c 5 1 a 100 a v gs(th) 0.45 0.6 1 v i d(on) 3a 0.395 0.55 t j =125c 0.6 0.85 0.479 0.68 ? 0.578 0.8 ? g fs 1.5 s v sd 0.65 1 v i s 0.4 a c iss 35 45 pf c oss 8pf c rss 6pf q g 0.63 1 nc q gs 0.08 nc q gd 0.16 nc t d(on) 4.5 ns t r 3.3 ns t d(off) 78 ns t f 32 ns t rr 8 10 ns q rr 2 nc 0.5 0.45 0.28 0.18 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. drain-source breakdown voltage i d =250 a, v gs =0v v gs =2.5v, i d =0.5a v gs =4.5v, v ds =5v gate threshold voltage v ds =v gs i d =250 a gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss ? v ds =0v, v gs =8v v ds =20v, v gs =0v v ds =0v, v gs =4.5v zero gate voltage drain current i gss forward transconductance on state drain current r ds(on) static drain-source on-resistance v ds =5v, i d =0.5a v gs =1.8v, i d =0.3a v gs =4.5v, i d =0.5a ? diode forward voltage i s =0.1a,v gs =0v total gate charge gate source charge maximum body-diode continuous current dynamic parameters v gs =0v, v ds =10v, f=1mhz reverse transfer capacitance input capacitance output capacitance switching parameters v gs =4.5v, v ds =10v, i d =0.5a v gs =5v, v ds =10v, r l =50 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time gate drain charge turn-on delaytime body diode reverse recovery time i f =0.5a, di/dt=100a/ s body diode reverse recovery charge i f =0.5a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the maximum current rating is limited by bond-wires rev0: jan, 08 AO5404E n-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristic s 0.5 0.45 0.28 0.18 0 1 2 3 01234 v ds (volts) figure 1: on-region characteristics i d (a) 1v 2v 4.5v vgs=1.5v 0 0.5 1 1.5 2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs (volts) figure 2: transfer characteristics i d (a) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v id=0.5a v gs =1.8v id=- 0 . 3 a 0 0.2 0.4 0.6 0.8 1 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) ( ? ) 25c 125c v ds =5v v gs =1.8v v gs =4.5v i d =0.5a 25c 125c 3.5v v gs =2.5v v gs =2.5v id=0.5a 2.5v AO5404E n-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristic s 0.5 0.45 0.28 0.18 0 1 2 3 4 5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 20 40 60 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) ciss 0 2 4 6 8 10 12 14 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss v ds =10v i d =0.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =450c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c t o n t p d t o n p d 0.0 0.1 1.0 10.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 s 1 0 m s 1ms 1s dc r ds(on) limited t j(max) =150c t a =25c 100 10s 0 .1 s AO5404E n-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 4
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