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SKP02N120 skb02n120 power semiconductors 1 jan-02 fast igbt in npt-technology with soft, fast recovery anti-parallel emcon diode g c e ? 40% lower e off compared to previous generation ? short circuit withstand time ? 10 s ? designed for: - motor controls - inverter - smps ? npt-technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability type v ce i c e off t j package ordering code SKP02N120 1200v 2a 0.11mj 150 c to-220ab q67040-s4278 skb02n120 to-263ab(d2pak) q67040-s4279 maximum ratings parameter symbol value unit collector-emitter voltage v ce 1200 v dc collector current t c = 25 c t c = 100 c i c 6.2 2.8 pulsed collector current, t p limited by t jmax i cpuls 9.6 turn off safe operating area v ce 1200v, t j 150 c - 9.6 diode forward current t c = 25 c t c = 100 c i f 4.5 2 diode pulsed current, t p limited by t jmax i fpuls 9 a gate-emitter voltage v ge 20 v short circuit withstand time 1) v ge = 15v, 100v v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 62 w operating junction and storage temperature t j , t stg -55...+150 soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 c 1) allowed number of short circuits: <1000; time between short circuits: >1s.
SKP02N120 skb02n120 power semiconductors 2 jan-02 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 2.0 diode thermal resistance, junction ? case r thjcd 4.5 thermal resistance, junction ? ambient r thja to-220ab 62 smd version, device on pcb 1) r thja to-263ab(d2pak) 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =100 a 1200 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =2a t j =25 c t j =150 c 2.5 - 3.1 3.7 3.6 4.3 diode forward voltage v f v ge =0v, i f =2a t j =25 c t j =150 c - 2.0 1.75 2.5 gate-emitter threshold voltage v ge(th) i c =100 a, v ce = v ge 34 5 v zero gate voltage collector current i ces v ce =1200v, v ge =0v t j =25 c t j =150 c - - - - 25 100 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =2a 1.5 - s dynamic characteristic input capacitance c iss - 205 250 output capacitance c oss -2834 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz -1215 pf gate charge q gate v cc =960v, i c =2a v ge =15v -11-nc internal emitter inductance measured 5mm (0.197 in.) from case l e to-220ab - 7 - nh short circuit collector current 2) i c(sc) v ge =15v, t sc 10 s 100v v cc 1200v, t j 150 c -24-a 1) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for collector connection. pcb is vertical without blown air. 2) allowed number of short circuits: <1000; time between short circuits: >1s.
SKP02N120 skb02n120 power semiconductors 3 jan-02 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) -2330 rise time t r -1621 turn-off delay time t d(off) - 260 340 fall time t f -6180 ns turn-on energy e on - 0.16 0.21 turn-off energy e off - 0.06 0.08 total switching energy e ts t j =25 c, v cc =800v, i c =2a, v ge =15v/0v, r g =91 ? , l 1) =180nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery. - 0.22 0.29 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 50 ns diode reverse recovery charge q rr -0.10 c diode peak reverse recovery current i rrm -4.2 a diode peak rate of fall of reverse recovery current during t f di rr /dt t j =25 c, v r =800v, i f =2a, di f /dt =250a/ s - 400 a/ s switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) -2631 rise time t r -1417 turn-off delay time t d(off) - 290 350 fall time t f - 85 102 ns turn-on energy e on - 0.27 0.33 turn-off energy e off - 0.11 0.15 total switching energy e ts t j =150 c v cc =800v, i c =2a, v ge =15v/0v, r g =91 ? , l 1) =180nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery. - 0.38 0.48 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 90 ns diode reverse recovery charge q rr -0.30 c diode peak reverse recovery current i rrm -6.7 a diode peak rate of fall of reverse recovery current during t f di rr /dt t j =150 c v r =800v, i f =2a, di f /dt =300a/ s - 110 a/ s 1) leakage inductance l and stray capacity c due to dynamic test circuit in figure e.
SKP02N120 skb02n120 power semiconductors 4 jan-02 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 2a 4a 6a 8a 10a 12a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0 .01a 0.1a 1a 10a dc 20ms 150 s 50 s 500 s t p =10 s f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 150 c, d = 0.5, v ce = 800v, v ge = +15v/0v, r g = 91 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 150 c) p tot , power dissipation 25c 50c 75c 100c 125c 0w 10w 20w 30w 40w 50w 60w i c , collector current 25c 50c 75c 100c 125c 0a 1a 2a 3a 4a 5a 6a 7a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 150 c) i c i c
SKP02N120 skb02n120 power semiconductors 5 jan-02 i c , collector current 0v 1v 2v 3v 4v 5v 6v 7v 0a 1a 2a 3a 4a 5a 6a 7a 15v 13v 11v 9v 7v v ge =17v i c , collector current 0v 1v 2v 3v 4v 5v 6v 7v 0a 1a 2a 3a 4a 5a 6a 7a 15v 13v 11v 9v 7v v ge =17v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristics ( t j = 25 c) figure 6. typical output characteristics ( t j = 150 c) i c , collector current 3v 5v 7v 9v 11 v 0a 1a 2a 3a 4a 5a 6a 7 a t j =-40c t j =+150c t j =+25c v ce(sat) , collector - emitter saturation voltage -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v i c =4a i c =2a i c =1a v ge , gate - emitter voltage t j , junction temperature figure 7. typical transfer characteristics ( v ce = 20v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v)
SKP02N120 skb02n120 power semiconductors 6 jan-02 t , switching times 0a 2a 4a 6 a 8 a 10ns 100ns t r t d(on) t f t d(off) t , switching times 0 ? 50 ? 100 ? 150 ? 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j = 150 c, v ce = 800v, v ge = +15v/0v, r g = 9 1 ? , dynamic test circuit in fig.e ) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 150 c, v ce = 800v, v ge = +15v/0v, i c = 2a, dynamic test circuit in fig.e) t , switching times -50c 0c 50c 100c 150c 10ns 100ns t r t d(on) t f t d(off) v ge(th) , gate - emitter threshold voltage -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v typ. min. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 800v, v ge = +15v/0v, i c = 2a, r g = 9 1 ? , dynamic test circuit in fig.e ) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.3ma)
SKP02N120 skb02n120 power semiconductors 7 jan-02 e , switching energy losses 0a 2a 4a 6 a 8 a 0.0mj 0.5mj 1.0mj 1.5mj 2.0mj e on * e off e ts * e , switching energy losses 0 ? 50 ? 100 ? 150 ? 0.0mj 0.1mj 0.2mj 0.3mj 0.4mj 0.5mj e ts * e on * e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 150 c, v ce = 800v, v ge = +15v/0v, r g = 9 1 ? , dynamic test circuit in fig.e ) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 150 c, v ce = 800v, v ge = +15v/0v, i c = 2a, dynamic test circuit in fig.e ) e , switching energy losses -50c 0c 50c 100c 150c 0.0mj 0.1mj 0.2mj 0.3mj 0.4mj e ts * e on * e off z thjc , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1 s 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t j , junction temperature t p , pulse width figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 800v, v ge = +15v/0v, i c = 2a, r g = 9 1 ? , dynamic test circuit in fig.e ) figure 16. igbt transient thermal impedance as a function of pulse width ( d = t p / t ) *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 0.66735 0.04691 0.70472 0.00388 0.62778 0.00041
SKP02N120 skb02n120 power semiconductors 8 jan-02 v ge , gate - emitter voltage 0nc 5nc 10nc 15n 0v 5v 10v 15v 20v u ce =960v c , capacitance 0v 10v 20v 30v 10pf 100pf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c = 2a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge = 0v, f = 1mhz) t sc , short circuit withstand time 10v 11v 12v 13v 14v 15v 0 s 5 s 10 s 15 s 20 s 25 s 30 i c(sc) , short circuit collector current 10v 12v 14v 16v 18v 20v 0a 10a 20a 30a 40a v ge , gate - emitter voltage v ge , gate - emitter voltage figure 19. short circuit withstand time as a function of gate-emitter voltage ( v ce = 1200v, start at t j = 25 c) figure 20. typical short circuit collector current as a function of gate-emitter voltage (100v v ce 1200v, t c = 25 c, t j 150 c)
SKP02N120 skb02n120 power semiconductors 9 jan-02 t rr , reverse recovery time 100a/ s 200a/ s 300a/ s 400a/ s 0ns 50ns 100ns 150ns 200ns 250ns i f =1a i f =2a q rr , reverse recovery charge 100a/ s 200a/ s 300a/ s 400a/ s 0.0c 0.1c 0.2c 0.3c 0.4c i f =2a i f =1a di f /dt , diode current slope di f /dt , diode current slope figure 21. typical reverse recovery time as a function of diode current slope ( v r = 800v, t j = 150 c, dynamic test circuit in fig.e ) figure 22. typical reverse recovery charge as a function of diode current slope ( v r = 800v, t j = 150 c, dynamic test circuit in fig.e ) i rr , reverse recovery current 100a/ s 200a/ s 300a/ s 400a/ s 0a 2a 4a 6a 8a 10a i f =2a i f =1a di rr /dt , diode peak rate of fall of reverse recovery current 100a/ s200a/ s 300a/ s 400a/ s 0a/ s 100a/ s 200a/ s 300a/ s 400a/ di f /dt , diode current slope di f /dt , diode current slope figure 23. typical reverse recovery current as a function of diode current slope ( v r = 800v, t j = 150 c, dynamic test circuit in fig.e ) figure 24. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r = 800v, t j = 150 c, dynamic test circuit in fig.e )
SKP02N120 skb02n120 power semiconductors 10 jan-02 i f , forward current 0v 1v 2v 3v 4v 0a 1a 2a 3a 4a 5a 6a 7 a t j =25c t j =150c v f , forward voltage 0c 40c 80c 120c 0.0v 0.5v 1.0v 1.5v 2.0v 2.5v 3.0v i f =4a i f =2a i f =1a v f , forward voltage t j , junction temperature figure 25. typical diode forward current as a function of forward voltage figure 26. typical diode forward voltage as a function of junction temperature z thjcd , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1 s 10 -2 k/w 10 -1 k/w 10 0 k/w 0 .01 0.02 0.05 0.1 0.2 single pulse d =0.5 t p , pulse width figure 27. diode transient thermal impedance as a function of pulse width ( d = t p / t ) c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) = 0.10109 0.38953 0.99478 0.04664 1.07923 0.00473 1.94890 0.00066
SKP02N120 skb02n120 power semiconductors 11 jan-02 dimensions symbol [mm] [inch] min max min max a 9.70 10.30 0.3819 0.4055 b 14.88 15.95 0.5858 0.6280 c 0.65 0.86 0.0256 0.0339 d 3.55 3.89 0.1398 0.1531 e 2.60 3.00 0.1024 0.1181 f 6.00 6.80 0.2362 0.2677 g 13.00 14.00 0.5118 0.5512 h 4.35 4.75 0.1713 0.1870 k 0.38 0.65 0.0150 0.0256 l 0.95 1.32 0.0374 0.0520 m 2.54 typ. 0.1 typ. n 4.30 4.50 0.1693 0.1772 p 1.17 1.40 0.0461 0.0551 t 2.30 2.72 0.0906 0.1071 to-220ab dimensions symbol [mm] [inch] min max min max a 9.80 10.20 0.3858 0.4016 b 0.70 1.30 0.0276 0.0512 c 1.00 1.60 0.0394 0.0630 d 1.03 1.07 0.0406 0.0421 e 2.54 typ. 0.1 typ. f 0.65 0.85 0.0256 0.0335 g 5.08 typ. 0.2 typ. h 4.30 4.50 0.1693 0.1772 k 1.17 1.37 0.0461 0.0539 l 9.05 9.45 0.3563 0.3720 m 2.30 2.50 0.0906 0.0984 n 15 typ. 0.5906 typ. p 0.00 0.20 0.0000 0.0079 q 4.20 5.20 0.1654 0.2047 r 8 max 8 max s 2.40 3.00 0.0945 0.1181 t 0.40 0.60 0.0157 0.0236 u 10.80 0.4252 v 1.15 0.0453 w 6.23 0.2453 x 4.60 0.1811 y 9.40 0.3701 to-263ab (d 2 pak) z 16.15 0.6358
SKP02N120 skb02n120 power semiconductors 12 jan-02 figure a. definition of switching times i rrm 90% i rrm 10% i rrm di /dt f t rr i f i,v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j figure d. thermal equivalent circuit figure b. definition of switching losses figure e. dynamic test circuit leakage inductance l =180nh, and stray capacity c =40pf.
SKP02N120 skb02n120 power semiconductors 13 jan-02 published by infineon technologies ag i gr ., bereich kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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