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| semitrans ? 3 superfast npt-igbt modules skm 200gb063d features ! ! " # $ % % & ! ' & & % % & % ( ) ' * + , % % - + , ( $ ) ) ) % . / % 0 ) 1 ! ! ! # 2 ) 2 ) ! $ ! ! 3 - ! ! 4 + typical applications ! ! 1 ) 0 0 ! 0 5 # 6 ! 0 gb absolute maximum ratings 7 4 * 8 ) % ! symbol conditions values units igbt ( ) ' 9 7 4 * 8 ) ; + + ( ) 9 7 3 * + 8 ) 7 4 * 8 ) 4 ; + 1 7 < + 8 ) 4 + + 1 ) = > ) = > 7 4 ? ) @ + + 1 ( ' a 4 + ( ( ) ) 7 - + + ( b ( ' c 4 + ( b ( ) ' d ; + + ( 9 7 3 4 * 8 ) 3 + e inverse diode . 9 7 3 * + 8 ) 7 4 * 8 ) 4 + + 1 7 f + 8 ) 3 - * 1 . = > . = > 7 4 ? . @ + + 1 . > 7 3 + b & 9 7 3 * + 8 ) 3 @ + + 1 module = > * + + 1 0 9 @ + & & & g 3 * + 8 ) @ + & & & g 3 4 * 8 ) ( 1 ) 3 & 4 * + + ( characteristics 7 4 * 8 ) % ! symbol conditions min. typ. max. units igbt ( ' ( ' 7 ( ) ' ) 7 @ 1 @ * * * ; * ( ) ' ( ' 7 + ( ( ) ' 7 ( ) ' 9 7 4 * 8 ) + 3 + - 1 ( ) ' + 9 7 4 * 8 ) 3 + * ( 9 7 3 4 * 8 ) 3 ( ) ' ( ' 7 3 * ( 9 7 4 * 8 ) * - h 9 7 3 4 * 8 ) < h ( ) ' ) 7 4 + + 1 ( ' 7 3 * ( 9 7 4 * 8 ) 0 & 4 3 4 * ( 9 7 3 4 * 8 ) 0 & 4 @ 4 f ( ) 3 3 4 . ) ( ) ' 7 4 * ( ' 7 + ( % 7 3 > " i 3 4 * . ) + < * . j ( ' 7 + ( g 3 * ( @ f + ) = 9 7 8 ) + k ! 3 @ + = 7 f h ( ) ) 7 - + + ( < + ' ) 7 4 + + 1 3 3 l ! % % = % % 7 f h 9 7 3 4 * 8 ) @ @ 4 % ( ' 7 a 3 * ( @ * ' % % < * l = 9 + 3 @ m n 6 skm 200gb063d 1 03-12-2008 sei ? by semikron semitrans ? 3 superfast npt-igbt modules skm 200gb063d features ! ! " # $ % % & ! ' & & % % & % ( ) ' * + , % % - + , ( $ ) ) ) % . / % 0 ) 1 ! ! ! # 2 ) 2 ) ! $ ! ! 3 - ! ! 4 + typical applications ! ! 1 ) 0 0 ! 0 5 # 6 ! 0 gb characteristics symbol conditions min. typ. max. units inverse diode ( . 7 ( ' ) . 7 4 + + 1 b ( ' 7 + ( 9 7 4 * 8 ) 0 & 3 * * 3 o ( 9 7 3 4 * 8 ) 0 & 3 * * ( ( . + 9 7 3 4 * 8 ) + o ( . 9 7 3 4 * 8 ) @ * * h = = > . 7 4 + + 1 9 7 3 4 * 8 ) < * 1 j 3 4 < e ) ' ( ' 7 3 * ( b ( ) ) 7 ; + + ( l = 9 2 ! ! + - m n 6 module ) ' 3 * 4 + " = ) ) p g ' ' p & 7 4 * 8 ) + - * h 7 3 4 * 8 ) + * h = ! + + - f m n 6 > q > ; - * > > ; 4 * * - 4 * this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. skm 200gb063d 2 03-12-2008 sei ? by semikron semitrans ? 3 superfast npt-igbt modules skm 200gb063d features ! ! " # $ % % & ! ' & & % % & % ( ) ' * + , % % - + , ( $ ) ) ) % . / % 0 ) 1 ! ! ! # 2 ) 2 ) ! $ ! ! 3 - ! ! 4 + typical applications ! ! 1 ) 0 0 ! 0 5 # 6 ! 0 gb z th symbol conditions values units z th(j-c)l = 7 3 o + q n 6 = 7 4 - o q n 6 = 7 - o q n 6 = 7 @ 4 q n 6 7 3 + + @ 3 ; 7 4 + + 3 - o 7 - + + + 4 3 7 @ + + + + 3 z th(j-c)d = 7 3 4 + + q n 6 = 7 4 f @ q n 6 = 7 - 3 @ q n 6 = 7 @ 4 q n 6 7 3 + + 4 < * 7 4 + + @ 3 - 7 - + + + 3 o 7 @ + + + @ skm 200gb063d 3 03-12-2008 sei ? by semikron fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic skm 200gb063d 4 03-12-2008 sei ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance of igbt and diode fig. 10 cal diode forward characteristic fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode recovered charge skm 200gb063d 5 03-12-2008 sei ? by semikron ul recognized file no. e 63 532 ) 2 * ; ) 2 * ; skm 200gb063d 6 03-12-2008 sei ? by semikron |
Price & Availability of SKM200GB063D08
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