microsemi o p t o e l e c t ronics p roduc t s g roup 2830 s. fa i r v i e w s t r ee t , sa n t a a n a, c a 92704, (714) 979-8220 fa x (714)966-5256 h t t p : // w w w . m i c r o s e m i . c o m / op t o pa g e 1 c opyright ? 2000 msc1592.pd f 2000-10-16 www. m i cr osem i . com mxp3000 series g a a s pin photodiode chips p r o d u c t p r evi e w o p t o e l e c t ro n i c p r o du c ts descri p tio n descri p tio n descri p tio n descri p tion microse m i?s gaas p i n photo d iode chip s a re id e a l fo r wi d e bandwi d th 8 5 0n m optic a l networ k in g ap p licatio n s. t he f i ve d e v i ce s o f f e r e d fe a t ure exc e ll e nt d ar k curre n t rati n g s of 1 - 3 na, and a b rea k down v olta g e of 20 volts w it h t h e band w idth o pti o ns for 1.4 ghz (acti v e area o f 25 0 mm 2 ), 1.75 ghz(acti v e area o f 2 0 0 mm 2 ), 5 gh z (acti v e area o f 100 m m 2 ), 7 ghz (a c ti v e area o f 60 m m 2 ), and 8.75 gh z (acti v e area o f 30 m m 2 ), th e mxp30 0 0 s e ries o f photo d io d es a re o ri g in a ll y off e re d in di e for m for m anuf a ct u r e r s of photo d io d e m odules, sup e r v isor y pu m p lase r circ u it s , an d c o m bination p i n photodio d e - transi m pedance a m plifier h y brids. i m por t a n t: f o r th e m o st cu r r e n t d a ta , c o n s u l t micr o s e mi ? s w e bsit e : http: / / ww w . m i cr o s e m i .c o m ke y featur e s ke y featur e s ke y featur e s ke y featur e s ! " lo w d a rk c urr e nt ! " e x t r e m e l y l o w c a p a c i t a n c e ! " w i d e b a nd w idth ! " f a st r e s p on s e t i me appli c at i ons/b e nef i t appli c at i ons/b e nef i t appli c at i ons/b e nef i t appli c at i ons/b e nef i t s s s s ! " 850 n m f i b e r o p t i c a p p l i c a t i o ns part ratings an d chara c teristics item s y m mxp30 0 1 mxp30 0 2 mxp30 0 3 mxp30 0 4 mxp30 0 5 uni t tes t cond i tion a c t i v e a r ea(d i a. ) ? 30 6 0 10 0 20 0 25 0 m ? p hoto s e n s i tive ar e a 0.0007 0.002 8 0.007 8 0.031 4 0.049 1 mm2 de t e c t i o n ra n g e ? 85 0 85 0 85 0 85 0 85 0 n m ? r e s pon s ivity r 0 . 4 5 0 . 4 5 0 . 4 5 0 . 4 5 0 . 4 5 a / w v r =-5v, l = 850 n m d a rk c urr e nt i d a rk 1 1 1 2 3 n a v r =-5v ca p a c i t a n c e c 0. 3 0. 4 0. 6 1. 5 2 p f v r =-5v r i s e / fa l l t i m e t r / t f 4 0 5 0 7 0 20 0 25 0 p s v r =-5v, @ 850 n m b a nd w idth 8.7 5 7 5 1.7 5 1. 4 ghz v r =-5v, @ 850 n m b r ea k d o w n v o l t a g e v b 20 2 0 2 0 2 0 2 0 i r =10 u a c h i p s i ze 350 x 35 0 350 x 35 0 350 x 35 0 350 x 50 0 500 x 50 0 u m x u m bonding p a d dia. 40 , 10 0 40 , 10 0 10 0 10 0 10 0 m m m x x p p 3 3 0 0 0 0 0 0 s s e e r r i i e e s s
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