document number: 94401 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 1 phase control thyristors (hockey puk version), 500 a st280chpbf series vishay high power products features ? center amplifying gate ? metal case with ceramic insulator ? international standard case to-200ab (a-puk) ? extended temperature range ? lead (pb)-free typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary i t(av) 500 a to-200ab (a-puk) rohs compliant major ratings and characteristics parameter test conditions values units i t(av) 500 a t hs 80 c i t(rms) 1130 a t hs 25 c i tsm 50 hz 7200 a 60 hz 7500 i 2 t 50 hz 260 ka 2 s 60 hz 230 v drm /v rrm 400 to 600 v t q typical 100 s t j - 40 to 150 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma st280ch..c 04 400 500 75 06 600 700
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94401 2 revision: 11-aug-08 st280chpbf series vishay high power products phase control thyristors (hockey puk version), 500 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current at heatsink temperature i t(av) 180 conduction, half sine wave double side (single side) cooled 500 (185) a 80 (110) c maximum rms on-state current i t(rms) dc at 25 c heatsink temperature double side cooled 1130 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 7200 t = 8.3 ms 7500 t = 10 ms 100 % v rrm reapplied 6000 t = 8.3 ms 6300 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 260 ka 2 s t = 8.3 ms 235 t = 10 ms 100 % v rrm reapplied 180 t = 8.3 ms 165 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 2600 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.84 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 0.88 low level value of on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.50 m high level value of on-s tate slope resistance r t2 (i > x i t(av) ), t j = t j maximum 0.47 maximum on-state voltage v tm i pk = 1000 a, t j = t j maximum, t p = 10 ms sine pulse 1.35 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 600 ma maximum (typical) latching current i l 1000 (300) switching parameter symbol test conditions values units maximum non-repetitive rate of rise of turned-on current di/dt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d 0.67 % v drm , t j = 25 c 1.0 s typical turn-off time t q i tm = 300 a, t j = t j maximum, di/dt = 20 a/s, v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 , t p = 500 s 100 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 75 ma
document number: 94401 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 3 st280chpbf series phase control thyristors (hockey puk version), 500 a vishay high power products note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at diffe rent conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p 5 ms 10.0 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positive gate current i gm t j = t j maximum, t p 5 ms 3.0 a maximum peak positive gate voltage + v gm t j = t j maximum, t p 5 ms 20 v maximum peak negative gate voltage - v gm 5.0 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 v anode to cathode applied 180 - ma t j = 25 c 90 150 t j = 150 c 30 - dc gate voltage required to trigger v gt t j = - 40 c 2.9 - v t j = 25 c 1.8 3.0 t j = 150 c 1.0 - dc gate current not to trigger i gd t j = t j maximum maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.30 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to heatsink r thj-hs dc operation single side cooled 0.17 k/w dc operation double side cooled 0.08 maximum thermal resistance, case to heatsink r thc-hs dc operation single side cooled 0.033 dc operation double side cooled 0.017 mounting force, 10 % 4900 (500) n (kg) approximate weight 50 g case style see dimensions - link at the end of datasheet to-200ab (a-puk) r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.016 0.017 0.011 0.011 t j = t j maximum k/w 120 0.019 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94401 4 revision: 11-aug-08 st280chpbf series vishay high power products phase control thyristors (hockey puk version), 500 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5 - on-state power loss characteristics fig. 6 - on-state power loss characteristics 40 120 80 50 130 90 60 140 100 70 110 150 maximum allowable heatsink temperature (c) average on-state current (a) 100 200 300 400 500 0 30 60 90 120 180 st280ch..c series (single side cooled) r thj-hs (dc) = 0.17 k/w ? conduction angle 100 200 300 400 500 600 700 0 20 120 80 40 130 90 60 30 50 140 100 70 110 150 maximum allowable heatsink temperature (c) average on-state current (a) dc 30 60 90 120 180 st280ch..c series (single side cooled) r thj-hs (dc) = 0.17 k/w ? conduction period 20 120 80 40 130 90 60 30 50 140 100 70 110 150 maximum allowable heatsink temperature (c) average on-state current (a) 100 300 500 200 400 600 700 800 0 30 60 90 st280ch..c series (double side cooled) r thj-hs (dc) = 0.08 k/w 120 180 ? conduction angle 20 120 80 30 130 90 40 50 60 140 100 70 110 150 maximum allowable heatsink temperature (c) average on-state current (a) 200 400 600 1000 1200 800 0 dc 30 60 90 120 180 st280ch..c series (double side cooled) r thj-hs (dc) = 0.08 k/w ? conduction period 0 1000 600 200 1100 700 400 100 300 1200 800 500 900 1300 maximum average on-state power loss (w) average on-state current (a) 100 200 300 600 800 500 700 400 0 180 120 90 60 30 rms limit st280ch..c series t j = 150 c ? conduction angle 0 1400 600 1600 800 200 1000 400 1200 1800 average on-state current (a) 200 400 600 800 1200 1000 0 maximum average on-state power loss (w) dc 180 120 90 60 30 rms limit st280ch..c series t j = 150 c ? conduction period
document number: 94401 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 5 st280chpbf series phase control thyristors (hockey puk version), 500 a vishay high power products fig. 7 - maximum non- repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled fig. 9 - on-state voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics 3000 4500 5000 3500 5500 4000 6000 6500 peak half sine wave on-state current (a) number of equal amplitude half cycle current pulses (n) 10 100 1 st280ch..c series initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and with rated v rrm applied following surge. 2500 6000 4000 7000 6500 4500 3000 5000 3500 5500 7500 pulse train duration (s) 0.1 1 0.01 peak half sine wave on-state current (a) versus pulse train duration. control of conduction may not be maintained. st280ch..c series initial t j = 150 c no voltage reapplied rated v rrm reapplied maximum non-repetitive surge current 100 1000 10 000 instantaneous on-state current (a) instantaneous on-state voltage (v) 1.0 2.0 1.5 2.5 3.0 3.5 4.0 0.5 t j = 25 c t j = 150 c st280ch..c series 0.001 0.01 0.1 1 0.001 0.01 0.1 1 square wave pulse duration (s) z thj-hs - transient thermal impedance (k/w) 10 steady state value r thj-hs = 0.17 k/w (single side cooled) r thj-hs = 0.08 k/w (double side cooled) (dc operation) st280ch..c series
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94401 6 revision: 11-aug-08 st280chpbf series vishay high power products phase control thyristors (hockey puk version), 500 a fig. 11 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 instantaneous gate current (a) instantaneous gate voltage (v) 10 100 v gd i gd (b) (a) t j = 40 c t j = 25 c (1) (2) (3) a) recommended load line for b) recommended load line for 30 % rated di/dt: 10 v, 10 frequency limited by p g(av) rated di/dt: 20 v, 10 ; t r 1 s t r 1 s (1) p gm = 10 w, t p = 4 ms (2) p gm = 20 w, t p = 2 ms (3) p gm = 40 w, t p = 1 ms (4) p gm = 60 w, t p = 0.66 ms device: st280ch..c series t j = 150 c rectangular gate pulse (4) 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 5 - voltage code x 100 = v rrm (see voltage ratings table) - ch = ceramic puk, high temperature 6 - c = puk case to-200ab (a-puk) 7 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 8 - critical dv/dt: 9 - lead (pb)-free 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) none = 500 v/s (standard selection) l = 1000 v/s (special selection) device code 5 1 3 24 6789 st 28 0 ch 06 c 1 - pbf links to related documents dimensions http://www.vishay.com/doc?95074
document number: 95074 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-aug-07 1 to-200ab (a-puk) outline dimensions vishay semiconductors dimensions in millimeters (inches) 4.75 (0.19) 28 (1.10) 6.5 (0.26) 19 (0.75) dia. max. 0.3 (0.01) min. 0.3 (0.01) min. 13.7/14.4 (0.54/0.57) 25 5 gate terminal for 1.47 (0.06) dia. pin receptacle 19 (0.75) dia. max. 38 (1.50) dia max. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 42 (1.65) max. anode to gate creepage distance: 7.62 (0.30) minimum strike distance: 7.12 (0.28) minimum quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification)
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