CHTA42ZPT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t v o l t a g e 300 volts current 0.5 ampere a p p l i c a t i o n f e a t u r e * suitable for high packing density. * t e l e p h o n y a n d p r o f e r s s i o n a l c o m m u n c t i o n e q u i p m e n t . * o t h e r s w i t c h i n g a p p l i c a t i o n s . 2 0 04 -7 c i r c u i t l i m i t i n g v a l u e s i n a c c o r d a n c e w i t h t h e a b s o l u t e m a x i m u m r a t i n g s y s t e m ( i e c 6 0 1 3 4 ) . n o t e 1 . t r a n s i s t o r m o u n t e d o n a n f r 4 p r i n t e d - c i r c u i t b o a r d . s y m b o l p a r a m e t e r c o n d i t i o n s m i n . m a x . u n i t v c b o c o l l e c t o r - b a s e v o l t a g e o p e n e m i t t e r - 300 v v c e o c o l l e c t o r - e m i t t e r v o l t a g e o p e n b a s e - 300 v v v e b o e m i t t e r - b a s e v o l t a g e o p e n c o l l e c t o r - 6 i c collector current (dc) - 500 ma p tot total po w er dissipation t amb 25 c; note 1 - 2 t stg stor age temper ature - 65 +150 c t j junction temper ature - 150 c t a m b o p e r a t i n g a m b i e n t t e m p e r a t u r e - 6 5 + 1 5 0 c npn silicon transistor construction *npn silicon transistor (1) (2) (3) e c b * small flat package. ( sc-73/sot-223 ) d i m e n s i o n s i n m i l l i m e t e r s s c - 7 3 / s o t - 2 2 3 s c - 7 3 / s o t - 2 2 3 0 . 9 0 + 0 . 0 5 6 . 5 0 + 0 . 2 0 1 . 6 5 + 0 . 1 5 0 . 0 1 ~ 0 . 1 0 3 . 5 + 0 . 2 2 . 0 + 0 . 3 7 . 0 + 0 . 3 0 . 7 0 + 0 . 1 0 0 . 7 0 + 0 . 1 0 0 . 7 0 + 0 . 1 0 2 . 3 0 + 0 . 1 4 . 6 0 + 0 . 1 0 . 2 7 + 0 . 0 5 3 . 0 0 + 0 . 1 0 2 . 0 + 0 . 3 0 . 9 + 0 . 2 1 2 3 1 b a s e 3 c o l l e c t o r ( h e a t s i n k ) 2 e m i t t e r w marking zhn
t h e r m a l c h a r a c t e r i s t i c s n o t e 1 . t r a n s i s t o r m o u n t e d o n a n f r 4 p r i n t e d - c i r c u i t b o a r d . c h a r a c t e r i s t i c s t a m b = 2 5 c u n l e s s o t h e r w i s e s p e c i t e d . s y m b o l p a r a m e t e r c o n d i t i o n s v a l u e u n i t r t h j - a t h e r m a l r e s i s t a n c e f r o m j u n c t i o n t o a m b i e n t n o t e 1 104 k / w r a t i n g c h a r a c t e r i s t i c c u r v e s ( c hta42zpt ) 40 - v i c = 30 ma; v ce =10v 40 ic=20ma, ib=2.0ma ic=20ma, ib=2.0ma s y m b o l cob p vcb=20v, ie=0, f=1.0mhz a r a m e t e r 3.0 c o n d i t i o n s pf m i n . - m a x . - u n i t collector capacitance i - c b o c o l l e c t o r c u t - o f f c u r r e n t v cb = 200 v - 100 na i ebo emitter cut-off current v eb =6.0v - 100 na i c = 1 ma; v ce = 10v i c = 10 ma; v ce =10v 25 h fe dc current gain - v ce(sat) collector-emitter satur ation v oltage - 0.5 v be(sat) base-emitter satur ation v oltage 0.9 v f t tr ansition frequency i c = 10 ma; vce=20v ; f = 100mhz 50
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