cy14b104la, cy14b104na 4 mbit (512k x 8/256k x 16) nvsram cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document #: 001-49918 rev. *c revised july 15, 2009 features 20 ns, 25 ns, and 45 ns access times internally organized as 512k x 8 (cy14b104la) or 256k x 16 (cy14b104na) hands off automatic store on power down with only a small capacitor store to quantumtrap nonvolatile elements initiated by software, device pin, or autostore on power down recall to sram initiated by software or power up infinite read, write, and recall cycles 200,000 store cycles to quantumtrap 20 year data retention single 3v +20 % , -10 % operation commercial and industrial temperatures 48-ball fbga and 44/54-pin tsop-ii packages pb-free and rohs compliance functional description the cypress cy14b104la/cy14b104na is a fast static ram, with a nonvolatile element in each memory cell. the memory is organized as 512k bytes of 8 bits each or 256k words of 16 bits each. the embedded nonvolatile elements incorporate quantumtrap technology, producing the world?s most reliable nonvolatile memory. the sram provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable quantumtrap cell. data transfers from the sram to the nonvolatile elements (the store operation) takes place automatically at power down. on power up, data is restored to the sram (the recall operation) from the nonvolatile memory. both the store and recall operations are also available under software control. 6 7 $ 7 , & |