?011 fairchild semiconductor corporation rhrp860_f085 rev. c rhrp860_f085 8a,600v hyperfast diodes the rhrp860_f085 is h yperf ast diodes with soft recovery characteristics (t rr < 30ns). it has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. this device is intended for use as freewheeling/clamping diodes and recti?rs in a variety of switching power supplies and other power switching applications. its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. formerly developmental type ta49059. symbol features hyperf ast with soft recovery. . . . . . . . . . . . . . . . . . <30ns operating temperature . . . . . . . . . . . . . . . . . . . . . . 175 o c re verse voltage up to . . . . . . . . . . . . . . . . . . . . . . . . 600v avalanche energy rated planar construction applications switching p ower supplies power switching circuits general purpose p ac kaging jedec to-220ac or dering inf ormation par t number package brand to-220ac rhrp860_f085 rhrp860_f085 note: when ordering, use the entire part number. k a anode ca thode ca thode (flange) absolute maxim um ratings t c = 25 o c, unless otherwise speci?d p eak repetitive reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v rrm 600 v wor king peak reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v rw m 600 v dc blocking voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v r 600 v av erage recti?d forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i f(a v) (t c = 150 o c) 8a repetitiv e peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i frm (square wa ve, 20khz) 16 a nonrepetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .i fsm (halfwa ve, 1 phase, 60hz) 100 a maximum power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 75 w av alanche energy (see figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e av l 20 mj operating and stor age temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t stg , t j - 65 to 175 o c data sheet september 2011 rhrp860 _ f085 units
?011 fairchild semiconductor corporation rhrp860_f085 rev. c electrical speci?ations t c = 25 o c, unless otherwise speci?d symbol test condition units v f i f = 8a i f = 8a, t c = 150 o c i r v r = 400v - - a v r = 600v 0 0 a v r = 400v, t c = 150 o c - - a v r = 600v, t c = 150 o 0 0 a t rr i f = 1a, di f /dt = 200a/ i f = 8a, di f /dt = 200a/ t a i f = 8a, di f /dt = 200a/ s t b i f = 8a, di f /dt = 200a/ s q rr i f = 8a, di f /dt = 200a/ s c j v r = 10v, i f = 0a r jc o c/w definitions v f = instantaneous forward v oltage (pw = 300 s, d = 2%). i r = instantaneous reverse current. t rr = reverse reco very time (see figure 9), summation of t a + t b . t a = time to reach peak rev erse current (see figure 9). t b = time from peak i rm to projected zero crossing of i rm based on a straight line from peak i rm through 25% of i rm (see figure 9). q rr = reverse reco very charge. cj = junction capacitance. r jc = thermal resistance junction to case . pw = pulse width. d = duty cycle. typical perf ormance curves figure 1. forw ard current vs forward voltage figure 2. reverse current vs reverse voltage v f , forward v oltage (v) i f , forward current (a) 1 40 0.5 10 0 0.5 1 1.5 2 2.5 3 175 o c 25 o c 100 o c v r , reverse vol t age (v) 0 200 400 600 300 500 1000 0.01 0.1 1 10 i r , reverse current ( a) 100 100 175 o c 100 o c 25 o c - - - - c s s ns ns ns nc - p f ns v v - - - - - - - - 25 - - 2 56 - 10 - 18 - - 35 - 30 - 5 - 1 - 1.7 - 2.1 min typ max rhrp860_f085
?011 fairchild semiconductor corporation rhrp860_f085 rev. c figure 3. t rr , t a and t b curves vs forward current figure 4. t rr , t a and t b curves vs forward current figure 5. t rr , t a and t b curves vs forward current figure 6. current derating curve figure 7. junction capacitance vs reverse voltage typical performance curves (continued) i f , forward current (a) 0.5 0 25 10 8 1 15 20 t, recovery times (ns) 4 t b 30 t rr t a 35 5 t c = 25 o c, di f /dt = 200a/ s 20 30 40 t, recovery times (ns) i f , forward current (a) 0.5 0 8 14 50 t a t rr 60 t b 10 t c = 100 o c, di f /dt = 200a/ s 75 60 45 t, recovery times (ns) i f , forward current (a) 0.5 0 8 14 t a 30 90 t rr t b 15 t c = 175 o c, di f /dt = 200a/ s 10 2 0 125 135 155 175 165 4 6 8 t c , case temperature ( o c) i f(av) , average forward current (a) 145 dc sq. wave v r , reverse voltage (v) 20 10 0 40 0 50 100 150 200 60 c j , junction capacitance (pf) 50 30 rhrp860_f085
?011 fairchild semiconductor corporation rhrp860 rev. c test circuits and waveforms figure 8. t rr test circuit figure 9. t rr waveforms and definitions figure 10. avalanche energy test circuit figure 11. avalanche current and voltage waveforms r g l v dd igbt current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm dut current sense + lr v dd r < 0.1 e avl = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - v dd q 1 i max = 1a l = 40mh iv t 0 t 1 t 2 i l v avl t i l rhrp860_f085
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uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supp lementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by c ountry on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i55
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