parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10 v 1.5 i d @ tc = 100c continuous drain current, v gs @ 10 v 0.96 i dm pulsed drain current ? 12 p d @tc = 25c power dissipation 3.1 p d @t a = 25c power dissipation (pcb mount)** 2.0 w linear derating factor 0.025 linear derating factor (pcb mount)** 0.017 w/c v gs gate-to-source voltage -/+20 v e as single pulse avalanche energy ? 150 mj i ar avalanche current ? 1.5 a e ar repetitive avalanche energy ? 0.31 mj dv/dt peak diode recovery dv/dt ? 5.5 v/ns t j, t stg junction and storage temperature range -55 to + 150 irfl110 hexfet ? power mosfet pd - 90861a s d g v dss = 100v r ds(on) = 0.54 w i d = 1.5a third generation hexfets from international rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the sot-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. its unique package design allows for easy automatic pick-and- place as with other sot or soic packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. power dissipation of grreater than 1.25w is possible in a typical surface mount application. 1/28/99 description l surface mount l available in tape & reel l dynamic dv/dt rating l repetitive avalanche rated l fast switching l ease of paralleling l simple drive requirements sot-223 ** when mounted on 1'' square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. parameter typ. max. units r q jc junction-to-pcb CCC 40 r q ja junction-to-ambient. (pcb mount)** CCC 60 thermal resistance c/w absolute maximum ratings a www.irf.com 1 soldewring temperature, for 10 seconds 300 (1.6mm from case) c
irfl110 2 www.irf.com r ds(on) static drain-to-source on-resistance CCC CCC 0.54 w v gs = 10v, i d = 0.90a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 1.1 CCC CCC s v ds = 50v, i d = 0.90a ? CCC CCC 25 a v ds = 100v, v gs = 0v CCC CCC 250 v ds = 80v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v q g total gate charge CCC CCC 8.3 i d = 5.6a q gs gate-to-source charge CCC CCC 2.3 nc v ds = 80v q gd gate-to-drain ("miller") charge CCC CCC 3.8 v gs = 10v, see fig. 6 and 13 ? t d(on) turn-on delay time CCC 6.9 CCC v dd = 50v t r rise time CCC 16 CCC ns i d = 5.6a t d(off) turn-off delay time CCC 15 CCC r g = 24 w t f fall time CCC 9.4 CCC r d = 8.4 w, see fig. 10 ? nh c iss input capacitance CCC 180 CCC v gs = 0v c oss output capacitance CCC 81 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 15 CCC ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 5.6a, di/dt 75a/s, v dd v (br)dss , t j 150c notes: ? v dd= 25v, starting t j = 25c, l = 25 mh r g = 25 w , i as = 3.0a (see figure 12) ? pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 2.5 v t j = 25c, i s = 1.5a, v gs = 0v ? t rr reverse recovery time CCC 100 200 ns t j = 25c, i f = 5.6a q rr reverse recovery charge CCC 0.44 0.88 c di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) CCC CCC CCC CCC 12 1.5 a s d g between lead, 6mm(0.25in) from package and center of die contact. l s internal source inductance internal drain inductance l d CCC 4.0 CCC CCC 6.0 CCC d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.63 CCC v/c reference to 25c, i d = 1ma v (br)dss drain-to-source breakdown voltage 100 CCC CCC v v gs = 0v, i d = 250a parameter min. typ. max. units conditions source-drain ratings and characteristics
irfl110 www.irf.com 3
irfl110 4 www.irf.com
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irfl110 6 www.irf.com
irfl110 www.irf.com 7 package outline sot-223 (to-261aa) outline sot-223 part marking information date code (yw w ) y = last digit of the year ww = week bottom part number top international re ctifie r log o exa mple : this is an irfl014 w a fer lo t co de xxxxxx 314 fl014
irfl110 8 www.irf.com sot-223 outline tape & reel information 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ . 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) m in . 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel co ntains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) m ax . 14.40 (.566) 12.40 (.488) 4 4 world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 1/99
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