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document number: 93494 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 3-levels half-bridge inverter stage, 60 a/57 a vs-EMF050J60U vishay semiconductors features ? warp1 and warp2 pfc igbt ?fred pt ? and hexfred ? antiparallel diodes ?fred pt ? clamping diodes ? integrated thermistor ? square rbsoa ? operating frequency 60 khz to 150 khz ? low internal inductances ? low switching loss ? compliant to rohs directive 2002/95/ec description vs-EMF050J60U is an integrated solution for a multi level inverter half-bridge in a si ngle package. the emipak2 package is easy to use thanks to the solderable terminals and provides improved thermal performance thanks to the exposed substrate. the opti mized layout also helps to minimize stray parameters, allowing for better emi performance. product summary 1 level of half-bridge v ces 600 v v ce(on) typical at i c = 50 a 1.8 v i c at t c = 98 c 50 a 2 level of half-bridge v ces 900 v v ce(on) typical at i c = 50 a 2.73 v i c at t c = 93 c 50 a emipak2 absolute maximum ratings parameter symbol test conditions max. units operating junction temperature t j 150 c storage temperature range t stg - 40 to 125 rms isolation voltage v isol t j = 25 c, all terminals shor ted, f = 50 hz, t = 1 s 3500 v q1 - q4 igbt collector to em itter voltage v ces 600 v gate to emitter voltage v ges 20 v pulsed collector current i cm 150 a clamped inductive load current i lm (1) 150 a continuous coll ector current i c t c = 25 c 88 a t c = 80 c 60 power dissi pation p d t c = 25 c 338 w t c = 80 c 189 q2 - q3 igbt collector to em itter voltage v ces 900 v gate to emitter voltage v ges 20 v pulsed collector current i cm 150 a clamped inductive load current i lm (2) 150 a continuous coll ector current i c t c = 25 c 85 a t c = 80 c 57 power dissi pation p d t c = 25 c 338 w t c = 80 c 189
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93494 2 revision: 18-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U vishay semiconductors 3-levels half-bridge inverter stage, 60 a/57 a notes ? absolute maximum ratings indicate sustained limits beyo nd which damage to the device may occur. (1) v cc = 400 v, v ge = 15 v, l = 500 h, r g = 22 ? , t j = 150 c (2) v cc = 720 v, v ge = 15 v, l = 500 h, r g = 22 ? , t j = 150 c d1 - d2 clamping diode repetitive peak reverse voltage v rrm 600 v single pulse forward current i fsm 10 ms sine or 6 ms rectangular pulse, t j = 25 c 150 a diode continuous forward current i f t c = 25 c 68 a t c = 80 c 46 power dissipation p d t c = 25 c 150 w t c = 80 c 84 d3 - d4 ap diode single pulse forward current i fsm 10 ms sine or 6 ms rectangular pulse, t j = 25 c 150 a diode continuous forward current i f t c = 25 c 53 a t c = 80 c 36 power dissipation p d t c = 25 c 176 w t c = 80 c 99 d5 - d6 ap diode single pulse forward current i fsm 10 ms sine or 6 ms rectangular pulse, t j = 25 c 100 a diode continuous forward current i f t c = 25 c 46 a t c = 80 c 31 power dissipation p d t c = 25 c 96 w t c = 80 c 54 electrical specifications (t j = 25 c unless otherwise noted) parameter symbol test cond itions min. typ. max. units q1 - q4 igbt collector to emitter breakdown voltage bv ces v ge = 0 v, i c = 500 a 600 - - v temperature coefficient of breakdown voltage ? bv ces / ? t j v ge = 0 v, i c = 500 a (25 c to 125 c) - 0.1 - v/c collector to em itter voltage v ce(on) v ge = 15 v, i c = 27 a - 1.44 1.75 v v ge = 15 v, i c = 50 a - 1.8 2.1 v ge = 15 v, i c = 27 a, t j = 125 c - 1.7 2.05 v ge = 15 v, i c = 50 a, t j = 125 c - 2.2 2.5 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 2.9 3.9 5.3 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 10 - mv/c forward transconductance g fe v ce = 20 v, i c = 50 a - 95 - s transfer characteristics v ge v ce = 20 v, i c = 50 a - 5.9 - v zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v - 0.003 0.1 ma v ge = 0 v, v ce = 600 v, t j = 125 c - 0.170 3 gate to emitter leakage current i ges v ge = 20 v, v ce = 0 v - - 200 na absolute maximum ratings parameter symbol test conditions max. units
document number: 93494 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U 3-levels half-bridge inverter stage, 60 a/57 a vishay semiconductors q2 - q3 igbt collector to emitter breakdown voltage bv ces v ge = 0 v, i c = 500 a 900 - - v temperature coefficient of breakdown voltage ? bv ces / ? t j v ge = 0 v, i c = 500 a (25 c to 125 c) - - 8.5 - v/c collector to em itter voltage v ce(on) v ge = 15 v, i c = 27 a - 2.45 2.8 v v ge = 15 v, i c = 50 a - 2.73 3.2 v ge = 15 v, i c = 27 a, t j = 125 c - 2 2.35 v ge = 15 v, i c = 50 a, t j = 125 c - 2.43 2.9 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 2.8 4.5 6.3 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 11.7 - mv/c forward transconductance g fe v ce = 20 v, i c = 50 a - 68 - s transfer characteristics v ge v ce = 20 v, i c = 50 a - 6.9 - v zero gate voltage collector current i ces v ge = 0 v, v ce = 900 v - 0.006 0.38 ma v ge = 0 v, v ce = 900 v, t j = 125 c - 1.4 3 gate to emitter leakage current i ges v ge = 20 v, v ce = 0 v - - 200 na d1 - d2 clamping diode cathode to anode blocking voltage v br i r = 100 a 600 - - v forward voltage drop v fm i f = 30 a - 1.84 2.12 v i f = 30 a, t j = 125 c - 1.37 1.65 reverse leakage current i rm v r = 600 v - 0.002 0.1 ma v r = 600 v, t j = 125 c - 3.2 6 d3 - d4 ap diode forward voltage drop v fm i f = 50 a - 2.7 3.2 v i f = 50 a t j = 125 c - 2.8 3.3 d5 - d6 ap diode forward voltage drop v fm i f = 30 a - 1.93 2.37 v i f = 30 a t j = 125 c - 1.48 1.9 electrical specifications (t j = 25 c unless otherwise noted) parameter symbol test condi tions min. typ. max. units
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93494 4 revision: 18-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U vishay semiconductors 3-levels half-bridge inverter stage, 60 a/57 a switching characteristics (t j = 25 c unless otherwise noted) parameter symbol test cond itions min. typ. max. units q1 - q4 igbt (with freewheeling d1 - d2 clamping diode) total gate charge (turn-on) q g i c = 70 a v cc = 400 v v ge = 15 v - 480 720 nc gate to ermitter charge (turn-on) q ge -82164 gate to collector charge (turn-on) q gc - 160 260 turn-on switching loss e on i c = 50 a v cc = 400 v v ge = 15 v r g = 4.7 ? l = 500 h (1) -0.11- mj turn-off switching loss e off -0.76- total switching loss e tot -0.87- turn-on delay time t d(on) - 182 - ns rise time t r -46- turn-off delay time t d(off) - 207 - fall time t f -92- turn-on switching loss e on i c = 50 a v cc = 400 v v ge = 15 v r g = 4.7 ? l = 500 h t j = 125 c (1) -0.25- mj turn-off switching loss e off -0.88- total switching loss e tot -1.13- turn-on delay time t d(on) - 183 - ns rise time t r -47- turn-off delay time t d(off) - 211 - fall time t f - 101 - input capacitance c ies v ge = 0 v v cc = 30 v f = 1 mhz - 9500 pf output capacitance c oes - 780 reverse transfer capacitance c res - 116 reverse bias safe operating area rbsoa t j = 150 c, i c = 150 a v cc = 400 v, v p = 600 v r g = 22 ? , v ge = 15 v to 0 v fullsquare q2 - q3 igbt (with freewheeling d3 - d4 ap diode) total gate charge (turn-on) q g i c = 50 a v cc = 400 v v ge = 15 v - 320 480 nc gate to emitter charge (turn-on) q ge -3858 gate to collector charge (turn-on) q gc - 106 160 turn-on switching loss e on i c = 50 a v cc = 720 v v ge = 15 v r g = 4.7 ? l = 500 h (1) -0.56- mj turn-off switching loss e off -0.68- total switching loss e tot -1.24- turn-on delay time t d(on) - 152 - ns rise time t r -48- turn-off delay time t d(off) - 165 - fall time t f - 100 - turn-on switching loss e on i c = 50 a v cc = 720 v v ge = 15 v r g = 4.7 ? l = 500 h t j = 125 c (1) -0.95- mj turn-off switching loss e off -2.18- total switching loss e tot -3.13- turn-on delay time t d(on) - 154 - ns rise time t r -52- turn-off delay time t d(off) - 168 - fall time t f - 360 - input capacitance c ies v ge = 0 v v cc = 30 v f = 1 mhz - 6600 - pf output capacitance c oes - 400 - reverse transfer capacitance c res -90- reverse bias safe operating area rbsoa t j = 150 c, i c = 150 a v cc = 720 v, v p = 900 v r g = 22 ? , v ge = 15 v to 0 v fullsquare
document number: 93494 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 5 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U 3-levels half-bridge inverter stage, 60 a/57 a vishay semiconductors note (1) energy losses include tail and diode reverse recovery. d1 - d2 clamping diode diode reverse recovery time t rr v r = 200 v i f = 30 a dl/dt = 500 a/s -5080ns diode peak reverse current i rr -7.511 a diode recovery charge q rr - 185 440 nc diode reverse recovery time t rr v r = 200 v i f = 30 a dl/dt = 500 a/s, t j = 125 c - 107 147 ns diode peak reverse current i rr -1822 a diode recovery charge q rr - 955 1620 nc d3 - d4 ap diode diode reverse recovery time t rr v r = 400 v i f = 50 a dl/dt = 500 a/s - 114 150 ns diode peak reverse current i rr -2125 a diode recovery charge q rr - 1200 1875 nc diode reverse recovery time t rr v r = 400 v i f = 50 a dl/dt = 500 a/s, t j = 125 c - 170 210 ns diode peak reverse current i rr -2832 a diode recovery charge q rr - 2160 3360 nc d5 - d6 ap diode diode reverse recovery time t rr v r = 200 v i f = 30 a dl/dt = 500 a/s -4677ns diode peak reverse current i rr -711 a diode recovery charge q rr - 161 423 nc diode reverse recovery time t rr v r = 200 v i f = 30 a dl/dt = 500 a/s, t j = 125 c - 106 138 ns diode peak reverse current i rr -1722 a diode recovery charge q rr - 900 1518 nc thermistor electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units resistance r 25 4500 5000 5500 ? r 100 t j = 100 c 468 493 518 b value b t j = 25 c/t j = 50 c 3206 3375 3544 k thermal and mechanical specifications parameter symbol min. typ. max. units junction to case q1 - q4 igbt thermal resistance (per switch) r thjc - - 0.37 c/w junction to case q2 - q3 igbt thermal resistance (per switch) - - 0.37 junction to case d1 - d2 ap diode thermal resistance (per diode) - - 0.83 junction to case d3 - d4 ap diode thermal resistance (per diode) - - 0.71 junction to case d5 - d6 ap diode thermal resistance (per diode) - - 1.3 case to sink, flat, grea sed surface (per module) r thcs -0.1- mounting torque (m4) -23nm weight -39- g switching characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93494 6 revision: 18-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U vishay semiconductors 3-levels half-bridge inverter stage, 60 a/57 a fig. 1 - typical q1 - q4 igbt output characteristics fig. 2 - typical q1 - q4 igbt output characteristics fig. 3 - maximum dc q1 - q4 igbt collector current vs. case temperature per junction fig. 4 - typical q1 - q4 igbt collector to emi tter voltage vs. junction temperature fig. 5 - typical q1 - q4 igbt transfer characteristics fig. 6 - typical q1 - q4 igbt gate threshold voltage i c (a) v ce (v) 0 1.5 3.0 1.0 2.5 0.5 2.0 3.5 0 93494_01 100 20 50 80 40 70 90 10 30 60 t j = 125 c t j = 150 c t j = 25 c v g e = 15 v i c (a) v ce (v) 0 1.5 2.5 3.0 3.5 0.5 1.0 2.0 4.0 0 93494_02 100 10 60 40 20 80 50 30 90 70 v g e = 8 v v g e = 10 v v g e = 12 v v g e = 15 v v g e = 18 v t j = 125 c allowable case temperature (c) i c - continuous collector current (a) 80 60 40 20 100 0 100 160 0 40 60 140 80 120 20 93494_03 dc v ce (v) t j (c) 10 160 60 110 0.5 1.0 1.5 2.0 2.5 3.0 3.5 93494_04 4.0 100 a 50 a 27 a v g e = 15 v i ce (a) v g e (v) 38 7 456 0 93494_05 100 30 40 10 50 60 20 80 90 70 t j = 25 c v ce = 20 v t j = 125 c v g eth (v) i c (ma) 0 1.0 0.2 0.1 0.3 0.5 0.7 0.9 0.4 0.6 0.8 2.0 2.5 3.0 3.5 4.0 93494_06 4.5 t j = 25 c t j = 125 c
document number: 93494 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 7 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U 3-levels half-bridge inverter stage, 60 a/57 a vishay semiconductors fig. 7 - q1 - q4 igbt reverse bias soa t j = 150 c, v ge = 15 v, r g = 22 ? fig. 8 - typical q1 - q4 igbt zero gate voltage collector current fig. 9 - typical d5 - d6 antiparallel diode forward characteristics fig. 10 - maximum dc d5 - d6 antiparallel diode forward current vs. case temperature per junction fig. 11 - typical q1 - q4 igbt energy loss vs. i c (with freewheeling d1 - d2 clamping diode) v cc = 400 v, r g = 4.7 ? , v ge = 15 v, l = 500 h fig. 12 - typical q1 - q4 igbt switching time vs. i c (with freewheeling d1 - d2 clamping diode) t j = 125 c, v cc = 400 v, r g = 4.7 ? , v ge = 15 v, l = 500 h i c (a) v ce (v) 1 10 100 1000 0.01 0.1 1 93494_07 1000 10 100 i ce s (ma) v ce s (v) 100 600 200 300 400 500 0.0001 93494_08 1 0.1 0.01 0.001 125 c 25 c i f (a) v fm (v) 03.0 0.5 1.0 1.5 2.0 2.5 0 93494_09 100 40 30 80 20 60 90 70 10 50 t j = 25 c t j = 125 c allowable case temperature (c) i f - continuous forwar d current (a) 25 15 10 535 30 20 40 45 50 0 100 160 0 40 60 140 80 120 20 93494_10 ener g y (mj) i c (a) 10 20 50 70 30 60 80 40 90 0 93494_11 1.8 0.6 1.2 1.0 0.8 1.4 1.6 0.4 0.2 e on e off s witchin g time (ns) i c (a) 10 20 30 80 60 40 50 70 90 10 93494_12 1000 100 t d(off) t d(on) t f t r
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93494 8 revision: 18-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U vishay semiconductors 3-levels half-bridge inverter stage, 60 a/57 a fig. 13 - typical d5 - d6 antiparallel diode reverse recovery time vs. di f /dt v r = 200 v, i f = 30 a fig. 14 - typical d5 - d6 antiparallel diode reverse recovery current vs. di f /dt v r = 200 v, i f = 30 a fig. 15 - typical d5 - d6 antiparallel diode reverse recovery charge vs. di f /dt v r = 200 v, i f = 30 a fig. 16 - maximum thermal impedance z thjc characteristics (q1 - q4 igbt) t rr (ns) d i f / d t (a/s) 100 200 300 400 93494_13 500 40 50 160 140 70 100 120 150 90 60 80 110 130 125 c 25 c i rr (a) d i f / d t (a/s) 100 200 300 400 93494_14 500 1 21 7 13 3 9 17 15 11 19 5 125 c 25 c q rr (nc) d i f / d t (a/s) 100 200 300 400 93494_15 500 0 200 100 1100 1000 400 600 800 500 700 900 300 125 c 25 c 0.001 0.01 0.1 1 0.00001 93494_16 0.0001 0.001 0.01 0.1 1 t 1 - rectan g ular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc
document number: 93494 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 9 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U 3-levels half-bridge inverter stage, 60 a/57 a vishay semiconductors fig. 17 - maximum thermal impedance z thjc characteristics (d5 - d6 antiparallel diode) fig. 18 - typical q2 - q3 igbt output characteristics fig. 19 - typical q2 - q3 igbt output characteristics fig. 20 - maximum dc q2 - q3 igbt collector current vs. case temperatur e per junction fig. 21 - typical q2 - q3 igbt collector to emi tter voltage vs. junction temperature 0.001 0.01 10 0.1 1 0.00001 93494_17 0.0001 0.001 0.01 0.1 1 t 1 - rectan g ular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc i c (a) v ce (v) 0 1.5 3.0 1.0 2.5 0.5 2.0 3.5 0 93494_18 100 20 50 80 40 70 90 10 30 60 t j = 125 c t j = 150 c t j = 25 c v g e = 15 v i c (a) v ce (v) 0 1.5 2.5 3.0 3.5 0.5 1.0 2.0 4.0 0 93494_19 100 10 60 40 20 80 50 30 90 70 v g e = 9 v v g e = 12 v v g e = 15 v v g e = 18 v t j = 125 c allowable case temperature (c) i c - continuous collector current (a) 80 60 40 20 100 0 100 160 0 40 60 140 80 120 20 93494_20 dc v ce (v) t j (c) 10 160 60 110 1.0 1.5 2.0 2.5 3.0 3.5 93494_21 4.0 100 a 50 a 27 a v g e = 15 v
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93494 10 revision: 18-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U vishay semiconductors 3-levels half-bridge inverter stage, 60 a/57 a fig. 22 - typical q1 - q4 igbt transfer characteristics fig. 23 - typical q2 - q3 igbt gate threshold voltage fig. 24 - q2 - q3 igbt reverse bias soa t j = 150 c, v ge = 15 v, r g = 22 ? fig. 25 - typical q2 - q3 igbt zero gate voltage collector current fig. 26 - typical d3 - d4 antiparallel diode forward characteristics fig. 27 - maximum dc d3 - d4 antiparallel diode forward current vs. case temperature per junction i ce (a) v g e (v) 49 8 567 0 93494_22 100 30 40 10 50 60 20 80 90 70 v ce = 20 v t j = 25 c t j = 125 c v g eth (v) i c (ma) 01.0 0.2 0.1 0.3 0.5 0.7 0.9 0.4 0.6 0.8 1.5 2.5 2.0 3.0 3.5 4.0 93494_23 5.5 4.5 5.0 t j = 25 c t j = 125 c i c (a) v ce (v) 1 10 100 1000 0.01 0.1 1 93494_24 1000 10 100 i ce s (ma) v ce s (v) 100 900 200 300 400 500 600 700 800 0.0001 93494_25 10 1 0.1 0.01 0.001 125 c 25 c i f (a) v fm (v) 04.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 0 93494_26 100 40 30 80 20 60 90 70 10 50 t j = 25 c t j = 125 c allowable case temperature (c) i f - continuous forwar d current (a) 25 15 10 535 30 20 40 45 60 50 55 0 100 160 0 40 60 140 80 120 20 93494_27
document number: 93494 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U 3-levels half-bridge inverter stage, 60 a/57 a vishay semiconductors fig. 28 - typical q2 - q3 igbt energy loss vs. i c (with freewheeling d2 - d3 ap diode) v cc = 720 v, r g = 4.7 ? , v ge = 15 v, l = 500 h fig. 29 - typical q2 - q3 igbt switching time vs. i c (with freewheeling d2 - d3 ap diode) t j = 125 c, v cc = 720 v, r g = 4.7 ? , v ge = 15 v, l = 500 h fig. 30 - typical d3 - d4 antiparallel diode reverse recovery time vs. di f /dt v r = 400 v, i f = 50 a fig. 31 - typical d3 - d4 antiparallel diode reverse recovery current vs. di f /dt v r = 400 v, i f = 50 a fig. 32 - typical d3 - d4 antiparalle l diode reverse recovery charge vs. di f /dt v r = 400 v, i f = 50 a ener g y (mj) i c (a) 10 20 50 70 30 60 80 40 90 0.2 93494_28 4.2 1.4 2.6 2.2 1.8 3.0 3.4 3.8 1.0 0.6 e on e off s witchin g time (ns) i c (a) 10 20 30 80 60 40 50 70 90 10 93494_29 1000 100 t d(off) t d(on) t f t r t rr (ns) d i f / d t (a/s) 100 200 300 400 93494_30 500 100 280 140 200 240 180 120 160 220 260 125 c 25 c i rr (a) d i f / d t (a/s) 100 200 300 400 93494_31 500 4 32 16 28 8 20 24 12 125 c 25 c q rr (nc) d i f / d t (a/s) 100 200 300 400 93494_32 500 500 2500 1000 1500 2000 1250 1750 2250 750 125 c 25 c
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93494 12 revision: 18-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U vishay semiconductors 3-levels half-bridge inverter stage, 60 a/57 a fig. 33 - maximum thermal impedance z thjc characteristics (q2 - q3 igbt) fig. 34 - maximum thermal impedance z thjc characteristics (d3 - d4 antiparallel diode) fig. 35 - typical d1 - d2 clamping diode forward characteristics fig. 36 - maximum dc d1 - d2 clamping diode forward current vs. case temperature per junction 0.001 0.01 0.1 1 0.00001 93494_33 0.0001 0.001 0.01 0.1 1 t 1 - rectan g ular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc 0.001 0.01 10 0.1 1 0.00001 93494_34 0.0001 0.001 0.01 0.1 1 t 1 - rectan g ular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc i f (a) v fm (v) 01.5 1.0 2.5 0.5 2.0 3.0 0 93494_35 100 20 50 80 40 70 90 10 30 60 t j = 125 c t j = 25 c allowable case temperature (c) i f - continuous forwar d current (a) 50 30 60 40 20 10 70 0 100 160 0 40 60 140 80 120 20 93494_36 dc
document number: 93494 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 13 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U 3-levels half-bridge inverter stage, 60 a/57 a vishay semiconductors fig. 37 - typical d1 - d2 clamping diode reverse leakage current fig. 38 - typical d1 - d2 clamping diode reverse recovery time vs. di f /dt v r = 200 v, i f = 30 a fig. 39 - typical d1 - d2 clamping diode reverse recovery current vs. di f /dt v r = 200 v, i f = 30 a fig. 40 - typical d1 - d2 clamping diode reverse recovery charge vs. di f /dt v r = 200 v, i f = 30 a fig. 41 - maximum thermal impedance z thjc characteristics (d1 - d2 clamping diode) i r (ma) v r (v) 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 93494_37 125 c 25 c t rr (ns) d i f / d t (a/s) 100 200 300 400 93494_38 500 40 160 80 140 120 60 100 125 c 25 c i rr (a) d i f / d t (a/s) 100 200 300 400 93494_39 500 1 21 7 13 3 9 17 15 11 19 5 125 c 25 c q rr (nc) d i f / d t (a/s) 100 200 300 400 93494_40 500 0 1000 200 400 600 300 500 700 900 800 100 125 c 25 c 0.001 0.01 10 0.1 1 0.00001 93494_41 0.0001 0.001 0.01 0.1 1 t 1 - rectan g ular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93494 14 revision: 18-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U vishay semiconductors 3-levels half-bridge inverter stage, 60 a/57 a ordering information table typical connection note ? please refer to lead assignment for correct pin configuration. this diagram shows electrical connections only. 1 - vishay semiconductors product 2 - package indicator (em = emipak2) 3 - circuit configuration (f = 3-levels half-bridge inverter stage) 4 - current rating (050 = 50 a) 5 - die technology (j = warp2 igbt) 6 - voltage rating (60 = 600 v) 7 - u = ultrafast device code 5 1 3 2 4 6 7 vs- em f 050 j 60 u
document number: 93494 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 15 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMF050J60U 3-levels half-bridge inverter stage, 60 a/57 a vishay semiconductors circuit configuration package links to related documents dimensions www.vishay.com/doc?95436 + 400 v 17 35 mid 14 15 vmid 29 30 36 q 1 q 2 q 3 q 4 th d5 d3 d4 d6 d2 d1 - 400 v 26 27 inv_drv1 33 1 5 9 6 11 inv_drv2 8 4 inv_drv3 3 2 inv_drv3 23 24 33 11 5 61 2 14 15 35 17 26 27 23 24 30 36 9 4 8 3 29
document number: 95436 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 27-jan-11 1 emipak2 outline dimensions vishay semiconductors dimensions in millimeters 5.1 12.7 8.9 10.2 7.6 7.6 11.4 55 0.3 15.2 14 58 0.3 40.6 1.3 2.6 1.3 5.1 3.8 3.8 10.1 16.5 62 0.3 53 23.8 23 41.5 ? 5 ? 2 ? 4.3 ? 1 0.1 20.5 1 17 1 12 m4 ? 0.4 6.4 16.8 145 62 0.3 39 0.3 3 ref. 0.1 20.5 1 24.1 20.3 16.5 12.7 8.9 2.5 6.3 11.4 20.3 24.1 13.3 12.1 9.5 9.5 5.7 7 3.2 1.9 7 10.8 15.9 1.9 5.7 8.3 12.1 15.9 pin s po s ition with tolerance front view f f top view flat metal plate or with optional m4 thread detail a s cale 10:1 ceramic gap detail a side view
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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