for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 hmc818lp4e gaas smt phemt dual channel low noise amplifier, 1.7 - 2.2 ghz v01.0809 general description features functional diagram l ow noise f igure: 0.85 db high gain: 20.5 db high oip 3: +35 dbm s ingle s upply: +3v to +5v 50 o hm m atched i nput/ o utput 24 l ead 4x4mm q fn p ackage: 16mm2 typical applications electrical specifcations, t a = +25 c, r bias = 10k, vdd= vdd1, 2, 3, 4, idd = idd1 + idd2, idd3 + idd4 p arameter vdd = 3v vdd = 5v units m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. f requency r ange 1700 - 2000 2000 - 2200 1700 - 2000 2000 - 2200 m hz gain 15 18 14 16.5 17 20.5 15.5 17.5 db gain variation o ver temperature 0.010 0.008 0.015 0.012 db/c noise f igure 0.95 1.2 0.95 1.2 0.85 1.1 0.85 1.1 db i nput r eturn l oss 18 17 21 18 db o utput r eturn l oss 16 15 15 13 db o utput p ower for 1 db compression ( p 1db) 14 15 19 21 dbm s aturated o utput p ower ( p sat) 15 16 20 21.5 dbm o utput third o rder i ntercept ( ip 3) 24.5 25 33 35 dbm s upply current ( i dd) 30 42 55 30 42 55 78 112 146 78 112 146 ma * r bias resistor sets current, see application circuit herein the h m c818 lp 4 e is a gaas ph em t dual channel l ow noise amplifer that is ideal for cellular/3g and l t e / w i m ax/4g basestation front-end receivers operating between 1.7 - 2.2 ghz. the amplifer has been optimized to provide 0.85 db noise fgure, 20.5 db gain and +35 dbm output ip 3 from a single supply of +5v. i nput and output return losses are excellent and the l na requires minimal external matching and bias decoupling components. the h m c818 lp 4 e can be biased with +3v to +5v and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the l na for a specifc application. the h m c818 lp 4 e is ideal for: ? cellular/3g and l t e / w i m ax/4g ? bt s & i nfrastructure ? r epeaters and f emtocells ? p ublic s afety r adios
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 input return loss vs. temperature [1] output return loss vs. temperature [1] broadband gain & return loss [1] [2] gain vs. temperature [1] reverse isolation vs. temperature [1] gain vs. temperature [2] [1] vdd = 5v, r bias = 10k [2] vdd = 3v, r bias = 10k hmc818lp4e v01.0809 gaas smt phemt dual channel low noise amplifier, 1.7 - 2.2 ghz -35 -25 -15 -5 5 15 25 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 vdd=5v vdd=3v response (db) frequency (ghz) s11 s22 s21 12 14 16 18 20 22 24 26 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c - 40c gain (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25 c +85 c - 40 c return loss (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25 c +85 c - 40 c return loss (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25 c +85 c - 40 c return loss (db) frequency (ghz) 12 14 16 18 20 22 24 26 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c - 40c gain (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 psat vs. temperature [1] m easurement reference plane shown on evaluation p cb drawing. noise figure vs temperature [1] output p1db vs. temperature output ip3 vs. temperature output ip3 and idd vs. supply voltage @ 1700 mhz output ip3 and idd vs. supply voltage @ 2100 mhz hmc818lp4e v01.0809 gaas smt phemt dual channel low noise amplifier, 1.7 - 2.2 ghz 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 vdd=5v vdd=3v noise figure (db) frequency (ghz) +85c +25 c -40c 10 12 14 16 18 20 22 24 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25 c +85 c - 40 c psat (dbm) frequency (ghz) vdd=3v vdd=5v 22 24 26 28 30 32 34 36 0 30 60 90 120 150 180 210 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (dbm) idd (ma) voltage supply (v) 22 24 26 28 30 32 34 36 38 0 30 60 90 120 150 180 210 240 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (dbm) idd (ma) voltage supply (v) 20 22 24 26 28 30 32 34 36 38 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25 c +85 c - 40 c ip3 (dbm) frequency (ghz) vdd=3v vdd=5v 10 12 14 16 18 20 22 24 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25 c +85 c - 40 c p1db (dbm) frequency (ghz) vdd=3v vdd=5v
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 gain, power & noise figure vs. supply voltage @ 1700 mhz [1] vdd = 5v [2] vdd = 3v power compression @ 1700 mhz [1] power compression @ 2100 mhz [1] power compression @ 1700 mhz [2] power compression @ 2100 mhz [2] gain, power & noise figure vs. supply voltage @ 2100 mhz hmc818lp4e v01.0809 gaas smt phemt dual channel low noise amplifier, 1.7 - 2.2 ghz -10 0 10 20 30 -16 -14 -12 -10 -8 -6 -4 -2 0 2 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -10 0 10 20 30 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 10 12 14 16 18 20 22 24 26 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply voltage (v) 10 12 14 16 18 20 22 24 26 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply voltage (v) -10 0 10 20 30 -16 -14 -12 -10 -8 -6 -4 -2 0 2 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -10 0 10 20 30 -16 -14 -12 -10 -8 -6 -4 -2 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 hmc818lp4e v01.0809 gaas smt phemt dual channel low noise amplifier, 1.7 - 2.2 ghz output ip3 vs. rbias @ 2100 mhz [1] cross channel isolation [1] gain, noise figure & rbias @ 2100 mhz [1] magnitude balance [1] output ip3 vs. rbias @ 1700 mhz [1] gain, noise figure & rbias @ 1700 mhz [1] 22 24 26 28 30 32 34 36 100 1000 10000 ip3 (dbm) rbias (ohms) 24 26 28 30 32 34 36 38 100 1000 10000 0 20 40 60 80 100 120 140 ip3 (dbm) rbias (ohms) -40 -30 -20 -10 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 rfin1 to rfout2 rfin2 to rfout1 isolation (db) frequency (ghz) 13 14 15 16 17 18 19 20 21 0.6 0.8 1 1.2 1.4 100 1000 10000 gain (db) noise figure (db) rbias(ohms) -1 -0.5 0 0.5 1 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 amplitude balance (db) frequency (ghz) 16 17 18 19 20 21 22 23 24 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 100 1000 10000 gain (db) noise figure (db) rbias(ohms) [1] vdd = 5v
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 phase balance [1] absolute maximum ratings drain bias voltage (vdd) 6v rf input p ower ( rfin) (vdd = +5 vdc) +10 dbm channel temperature 150 c continuous pdiss (t= 85 c) (derate 19.35 m w /c above 85 c) 1.26 w thermal r esistance (channel to ground paddle) 51.67 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c vdd (v) idd (ma) 2.7 31 3.0 42 3.3 52 4.5 95 5.0 112 5.5 129 note: amplifer will operate over full voltage ranges shown above. typical supply current vs. vdd (r bias = 10k) ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s vdd (v) rbias idd (ma) min (ohms) max (ohms) r1 (ohms) 3v 10k [2] o pen circuit 10k 42 5v 0 o pen circuit 120 64 470 82 10k 112 [2] w ith vdd= 3v and r bias < 10k o hm may result in the part becoming conditionally unstable which is not recommended. absolute bias resistor range & recommended bias resistor values for idd hmc818lp4e v01.0809 gaas smt phemt dual channel low noise amplifier, 1.7 - 2.2 ghz -2 -1 0 1 2 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 phase balance (degrees) frequency (ghz) [1] vdd = 5v
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 7 package information outline drawing p art number p ackage body m aterial l ead f inish msl r ating p ackage m arking [1] h m c818 lp 4 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] 818 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 235 c hmc818lp4e v01.0809 gaas smt phemt dual channel low noise amplifier, 1.7 - 2.2 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 8 pin number f unction description i nterface schematic 1, 6 rfin1, 2 this pin is dc coupled an off chip dc blocking capacitor is required. 2, 5, 7, 12, 14, 17, 19, 24 gnd p ackage bottom must be connected to rf /dc ground. 3, 4, 9, 10, 21, 22 n/c no connection required. these pins may be connected to rf/ dc ground without affecting performance. 23, 20, 8, 11 vdd1, 2, 3, 4 p ower supply voltage for each amplifer. choke inductor and bypass capacitors are required. s ee application circuit. 18, 13 rfout1, 2 this pin is matched to 50 o hms. 16, 15 res1, 2 these pins are used to set the dc current idd2 and idd4 in each amplifer via an external biasing resistor. s ee application circuit. pin descriptions hmc818lp4e v01.0809 gaas smt phemt dual channel low noise amplifier, 1.7 - 2.2 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 9 hmc818lp4e v01.0809 gaas smt phemt dual channel low noise amplifier, 1.7 - 2.2 ghz application circuit
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 10 evaluation pcb i tem description j1 - j4 p cb m ount sm a rf connector j5, j6 2mm vertical m olex 8pos connector c1, c2 220 p f capacitor, 0402 p kg.. c3, c5, c7, c9 1000 p f capacitor, 0603 p kg. c4, c6, c8, c10 0.47 f capacitor, 0603 p kg. c11, c12 10 kp f capacitor, 0402 p kg. c13, c14 0 o hm r esistor, 0402 p kg. l 5, l 7 15 nh i nductor, 0603 p kg. l 6, l 8 6.8 nh i nductor, 0603 p kg. r 1, r 2 ( r bias 1, 2) 10k o hm r esistor, 0402 p kg. u1 h m c818 lp 4( e ) amplifer p cb [2] 122725 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon 25 fr list of materials for evaluation pcb 122727 [1] the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request. hmc818lp4e v01.0809 gaas smt phemt dual channel low noise amplifier, 1.7 - 2.2 ghz
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