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d a t a sh eet product speci?cation supersedes data of 1997 dec 17 2003 sep 02 discrete semiconductors BLF245 vhf power mos transistor m3d065
2003 sep 02 2 philips semiconductors product speci?cation vhf power mos transistor BLF245 features high power gain low noise figure easy power control good thermal stability withstands full load mismatch. description silicon n-channel enhancement mode vertical d-mos transistor designed for large signal amplifier applications in the vhf frequency range. the transistor is encapsulated in a 4-lead sot123a flange package, with a ceramic cap. all leads are isolated from the flange. matched gate-source voltage (v gs ) groups are available on request. pinning - sot123a pin description 1 drain 2 source 3 gate 4 source pin configuration caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to philips specs.: snw-eq-608, snw-fq-302a, and snw-fq-302b. warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo disc is not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste. fig.1 simplified outline and symbol. l fpage 1 23 4 msb057 s d g mbb072 quick reference data rf performance at t h = 25 c in a class-b test circuit. mode of operation f (mhz) v ds (v) p l (w) g p (db) h d (%) cw, class-b 175 28 30 > 13 > 50
2003 sep 02 3 philips semiconductors product speci?cation vhf power mos transistor BLF245 limiting values in accordance with the absolute maximum system (iec 60134). thermal characteristics symbol parameter conditions min. max. unit v ds drain-source voltage v gs =0 - 65 v v gs gate-source voltage v ds =0 - 20 v i d drain current (dc) - 6a p tot total power dissipation t mb 25 c - 68 w t stg storage temperature - 65 150 c t j junction temperature - 200 c symbol parameter conditions value unit r th j-mb thermal resistance from junction to mounting base t mb =25 c; p tot = 68 w 2.6 k/w r th mb-h thermal resistance from mounting base to heatsink t mb =25 c; p tot = 68 w 0.3 k/w fig.2 dc soar. (1) current is this area may be limited by r dson . (2) t mb =25 c. handbook, halfpage 10 - 1 10 2 1 10 110 i d (a) v ds (v) (1) mra921 (2) fig.3 power derating curves. (1) continuous operation. (2) short-time operation during mismatch. handbook, halfpage 0 40 80 160 100 80 40 20 0 60 120 mgp167 p tot (w) t h ( c) (1) (2)
2003 sep 02 4 philips semiconductors product speci?cation vhf power mos transistor BLF245 characteristics t j = 25 c unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0; i d =10ma 65 -- v i dss drain-source leakage current v gs = 0; v ds =28v -- 2ma i gss gate-source leakage current v gs = 20 v; v ds =0 -- 1 m a v gsth gate-source threshold voltage i d = 10 ma; v ds =10v 2 - 4.5 v d v gs gate-source voltage difference of matched devices i d = 0 ma; v ds =10v -- 100 mv g fs forward transconductance i d = 1.5 a; v ds = 10 v 1.2 1.9 - s r dson drain-source on-state resistance i d = 1.5 a; v gs =10v - 0.4 0.75 w i dsx on-state drain current v gs = 10 v; v ds = 10 v - 10 - a c is input capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 125 - pf c os output capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 75 - pf c rs feedback capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 7 - pf f noise ?gure input and output power matched for: i d = 1 a; v ds = 28 v; p l =30w; r1=1k w ; t h =25 c; f = 175 mhz; see fig.14 - 2 - db v gs group indicator group limits (v) group limits (v) min. max. min. max. a 2.0 2.1 o 3.3 3.4 b 2.1 2.2 p 3.4 3.5 c 2.2 2.3 q 3.5 3.6 d 2.3 2.4 r 3.6 3.7 e 2.4 2.5 s 3.7 3.8 f 2.5 2.6 t 3.8 3.9 g 2.6 2.7 u 3.9 4.0 h 2.7 2.8 v 4.0 4.1 j 2.8 2.9 w 4.1 4.2 k 2.9 3.0 x 4.2 4.3 l 3.0 3.1 y 4.3 4.4 m 3.1 3.2 z 4.4 4.5 n 3.2 3.3
2003 sep 02 5 philips semiconductors product speci?cation vhf power mos transistor BLF245 fig.4 temperature coefficient of gate-source voltage as a function of drain current; typical values. v ds = 10 v; valid for t j =25to125 c. handbook, halfpage 6 - 6 2 t.c. (mv/k) i d (ma) - 2 4 0 - 4 mgp168 10 10 2 10 3 10 4 fig.5 drain current as a function of gate-source voltage; typical values. v ds =10v. handbook, halfpage 020 12 0 4 8 10 mgp169 i d (a) v gs (v) t j = 25 c 125 c fig.6 drain-source on-state resistance as a function of junction temperature; typical values. v gs = 10 v; i d = 1.5 a. handbook, halfpage 0 0.8 0.6 0.4 0 0.2 40 80 160 120 mgp170 r dson ( w ) t j ( c) fig.7 input and output capacitance as functions of drain-source voltage; typical values. v gs = 0; f = 1 mhz. handbook, halfpage 01020 40 240 40 200 30 160 120 80 mgp171 c (pf) v ds (v) c is c os
2003 sep 02 6 philips semiconductors product speci?cation vhf power mos transistor BLF245 fig.8 feedback capacitance as a function of drain-source voltage; typical values. v gs = 0; f = 1 mhz. handbook, halfpage 0 10 20 01020 c rs (pf) v ds (v) 30 mra920 application information for class-b operation t h = 25 c; r th mb-h = 0.3 k/w; r1 = 1 k w . rf performance in cw operation in a common source class-b test circuit. note 1. r1 included. ruggedness in class-b operation the BLF245 is capable of withstanding a load mismatch corresponding to vswr = 50 through all phases under the following conditions: t h =25 c; r th mb-h = 0.3 k/w; at rated load power. mode of operation f (mhz) v ds (v) i dq (ma) p l (w) g p (db) h d (%) z i ( w ) (1) z l ( w ) cw, class-b 175 28 50 30 > 13 typ. 15.5 < 50 typ. 67 2.0 - j2.7 3.9 + j4.4 175 12.5 50 12 typ. 12 typ. 66 2.4 - j2.5 3.8 + j1.3
2003 sep 02 7 philips semiconductors product speci?cation vhf power mos transistor BLF245 fig.9 power gain and efficiency as functions of load power; typical values. class-b operation; v ds = 28 v; i dq =50ma; f = 175 mhz; t h =25 c; r th mb-h = 0.3 k/w. handbook, halfpage 10 20 30 50 20 0 10 100 0 50 40 mgp172 g p (db) p l (w) h d (%) g p h d fig.10 load power as a function of input power; typical values. class-b operation; v ds = 28 v; i dq =50ma; f = 175 mhz; t h =25 c; r th mb-h = 0.3 k/w. handbook, halfpage 60 0 0.6 2.4 10 mea736 1.2 p l (w) p in (w) 20 30 40 50 1.8 fig.11 power gain and efficiency as functions of load power; typical values. class-b operation; v ds = 12.5 v; i dq =50ma; f = 175 mhz; t h =25 c; r th mb-h = 0.3 k/w. handbook, halfpage 01020 20 0 10 100 0 50 mgp173 g p (db) p l (w) h d (%) h d g p fig.12 load power as a function of input power; typical values. class-b operation; v ds = 12.5 v; i dq = 50 ma; f = 175 mhz; t h =25 c; r th mb-h = 0.3 k/w. handbook, halfpage 20 0 0.6 2.4 0 mea737 1.2 p in (w) p l (w) 10 1.8
2003 sep 02 8 philips semiconductors product speci?cation vhf power mos transistor BLF245 fig.13 test circuit for class-b operation. f = 175 mhz. handbook, full pagewidth mgp174 50 w input c1 c3 c4 c5 l1 l2 d.u.t. l3 l6 l4 r1 r2 z i c2 c10 c9 + v gg + v dd c8 c7 l5 r3 c6 50 w output
2003 sep 02 9 philips semiconductors product speci?cation vhf power mos transistor BLF245 list of components class-b test circuit (see fig.14) notes 1. american technical ceramics (atc) capacitor, type 100b or other capacitor of the same quality. 2. the striplines are mounted on a double copper-clad pcb with epoxy fibre-glass dielectric ( e r = 4.5), thickness 1 16 inch. component description value dimensions catalogue no. c1 ?lm dielectric trimmer 4 to 40 pf 2222 809 07008 c2, c8 ?lm dielectric trimmer 5 to 60 pf 2222 809 07011 c3 multilayer ceramic chip capacitor 100 pf 2222 854 13101 c4, c6 multilayer ceramic chip capacitor 100 nf 2222 852 47104 c5 ceramic capacitor 100 pf 2222 680 10101 c7 multilayer ceramic chip capacitor; note 1 18 pf c9 multilayer ceramic chip capacitor; note 1 27 pf c10 multilayer ceramic chip capacitor; note 1 24 pf l1 3 turns enamelled 0.5 mm copper wire 13.5 nh length 3.5 mm int. dia. 2 mm leads 2 2mm l2, l3 stripline; note 2 30 w 10 6mm l4 6 turns enamelled 1.5 mm copper wire 98 nh length 12.5 mm int. dia. 5 mm leads 2 2mm l5 grade 3b ferroxcube rf choke 4312 020 36640 l6 2 turns enamelled 1.5 mm copper wire 24.5 nh length 4 mm int. dia. 5 mm leads 2 2mm r1 metal ?lm resistor 1 k w r2 metal ?lm resistor 1 m w r3 metal ?lm resistor 10 w
2003 sep 02 10 philips semiconductors product speci?cation vhf power mos transistor BLF245 fig.14 component layout for 175 mhz class-b test circuit. dimensions in mm. the circuit and components are situated on one side of the epoxy fibre-glass board; the other side is unetched copper and serves as an earth. earth connections are made by means of fixing screws, hollow rivets and copper straps under the sources and around the edges, to provide a direct contact between the copper on the component side and the ground plane. handbook, full pagewidth mgp175 copper straps copper straps copper strap rivets c1 c2 c3 + v gg + v dd c4 l1 l2 l3 l4 l6 c5 c6 c7 c9 c10 c8 l5 r3 r2 r1 135 72
2003 sep 02 11 philips semiconductors product speci?cation vhf power mos transistor BLF245 fig.15 input impedance as a function of frequency (series components); typical values. class-b operation; v ds = 28 v; i dq =50ma; p l = 30 w; t h =25 c; r th mb-h = 0.3 k/w. handbook, halfpage 20 40 120 40 30 10 0 20 60 80 100 mgp177 z i ( w ) - x i f (mhz) r i fig.16 load impedance as a function of frequency (series components); typical values. class-b operation; v ds = 28 v; i dq =50ma; p l = 30 w; t h =25 c; r th mb-h = 0.3 k/w. handbook, halfpage 20 40 120 16 12 4 0 8 60 80 100 mgp178 z l ( w ) r l f (mhz) x l fig.17 definition of mos impedance. handbook, halfpage mba379 z i z l fig.18 power gain as a function of frequency; typical values. class-b operation; v ds = 28 v; i dq =50ma; p l = 30 w; t h =25 c; r th mb-h = 0.3 k/w. handbook, halfpage 20 40 120 40 30 10 0 20 60 80 100 mgp179 g p (db) f (mhz)
2003 sep 02 12 philips semiconductors product speci?cation vhf power mos transistor BLF245 BLF245 scattering parameters v ds = 12.5 v; i d = 50 ma; note 1 note 1. for more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast f (mhz) s 11 s 21 s 12 s 22 |s 11 | ef |s 21 | ef |s 12 | ef |s 22 | ef 5 0.91 - 48.3 25.72 147.1 0.03 57.9 0.92 - 47.8 10 0.80 - 81.4 19.43 125.8 0.05 36.8 0.81 - 81.3 20 0.71 - 116.7 11.79 102.4 0.06 15.0 0.71 - 115.5 30 0.68 - 132.3 8.04 89.7 0.06 3.3 0.69 - 131.1 40 0.69 - 140.3 5.97 80.8 0.06 - 4.4 0.69 - 139.0 50 0.71 - 145.2 4.67 73.6 0.06 - 10.2 0.71 - 143.8 60 0.73 - 148.6 3.76 67.5 0.05 - 14.8 0.73 - 147.2 70 0.75 - 151.1 3.10 62.4 0.05 - 18.4 0.75 - 149.9 80 0.77 - 153.1 2.61 57.9 0.05 - 21.3 0.77 - 152.1 90 0.79 - 155.1 2.24 53.7 0.04 - 23.8 0.79 - 154.2 100 0.81 - 157.3 1.94 49.8 0.04 - 25.9 0.81 - 156.1 125 0.84 - 161.9 1.39 41.2 0.03 - 28.0 0.85 - 160.1 150 0.87 - 165.0 1.04 35.4 0.02 - 23.3 0.88 - 163.4 175 0.91 - 167.9 0.81 30.8 0.01 - 8.4 0.91 - 166.3 200 0.92 - 171.0 0.65 26.6 0.01 22.4 0.92 - 168.9 250 0.94 - 175.5 0.44 21.6 0.02 72.1 0.95 - 173.3 300 0.95 - 179.8 0.32 19.2 0.03 83.0 0.96 - 176.8 350 0.96 176.9 0.24 19.7 0.04 86.1 0.97 - 179.8 400 0.96 173.5 0.19 22.1 0.05 86.1 0.97 177.5 450 0.97 170.6 0.16 26.1 0.06 86.2 0.97 174.9 500 0.97 167.8 0.14 31.6 0.08 84.7 0.98 172.6 600 0.96 162.4 0.13 43.5 0.10 82.6 0.98 168.4 700 0.96 157.2 0.13 52.9 0.12 80.0 0.97 164.4 800 0.94 152.4 0.14 58.9 0.13 77.9 0.97 160.6 900 0.95 147.8 0.16 63.1 0.15 74.4 0.95 157.1 1000 0.95 142.7 0.18 68.2 1.70 40.5 3.52 46.0
2003 sep 02 13 philips semiconductors product speci?cation vhf power mos transistor BLF245 BLF245 scattering parameters v ds = 28 v; i d = 50 ma; note 1 note 1. for more extensive s-parameters see internet: http://www.semiconductors.philips.co/.markets/communications/wirelesscommunication/broadcast f (mhz) s 11 s 21 s 12 s 22 |s 11 | ef |s 21 | ef |s 12 | ef |s 22 | ef 5 0.95 - 40.5 27.84 152.9 0.02 63.8 0.93 - 35.8 10 0.86 - 71.3 22.60 133.3 0.04 44.4 0.83 - 64.1 20 0.77 - 108.6 14.77 109.1 0.05 21.7 0.69 - 97.8 30 0.73 - 126.8 10.37 95.5 0.05 9.1 0.65 - 115.5 40 0.73 - 136.8 7.81 86.2 0.05 1.0 0.64 - 125.2 50 0.74 - 142.9 6.17 78.8 0.05 - 5.0 0.65 - 131.3 60 0.75 - 147.1 5.01 72.7 0.05 - 9.6 0.67 - 135.7 70 0.76 - 150.0 4.17 67.5 0.05 - 13.3 0.69 - 139.1 80 0.78 - 152.3 3.54 63.0 0.04 - 16.3 0.72 - 142.0 90 0.80 - 154.5 3.06 58.8 0.04 - 18.8 0.74 - 144.6 100 0.81 - 156.8 2.66 54.7 0.04 - 20.9 0.76 - 146.9 125 0.84 - 161.5 1.93 46.0 0.03 - 23.2 0.81 - 152.0 150 0.87 - 164.5 1.46 39.8 0.02 - 18.9 0.84 - 156.1 175 0.90 - 167.4 1.15 34.7 0.01 - 5.0 0.87 - 159.7 200 0.91 - 170.5 0.93 30.1 0.01 23.3 0.89 - 162.9 250 0.93 - 175.0 0.63 23.9 0.02 72.9 0.93 - 168.1 300 0.95 - 179.3 0.46 20.1 0.03 84.5 0.94 - 172.4 350 0.96 177.3 0.35 18.8 0.04 87.7 0.96 - 175.9 400 0.96 173.9 0.27 19.1 0.05 87.6 0.96 - 179.1 450 0.97 171.0 0.22 20.9 0.06 87.6 0.97 178.1 500 0.96 168.1 0.19 24.2 0.07 86.0 0.97 175.5 600 0.96 162.7 0.16 34.0 0.10 83.7 0.97 170.8 700 0.96 157.5 0.15 43.8 0.11 81.1 0.97 166.5 800 0.94 152.4 0.15 51.6 0.13 78.8 0.97 162.5 900 0.95 148.1 0.16 57.8 0.15 75.2 0.95 158.8 1000 0.95 142.9 0.18 64.3 1.92 53.7 4.01 59.9
2003 sep 02 14 philips semiconductors product speci?cation vhf power mos transistor BLF245 package outline references outline version european projection issue date 99-03-29 iec jedec eiaj sot123a 0 5 10 mm scale flanged ceramic package; 2 mounting holes; 4 leads sot123a 1 2 43 u 3 u 2 h h b q d d 1 u 1 q a f c p b c a w 1 m m a m b a unit a mm d b 5.82 5.56 0.18 0.10 9.73 9.47 9.78 9.42 20.71 19.93 3.33 3.04 6.48 6.22 7.47 6.37 c d 1 u 2 u 3 9.78 9.39 0.51 0.25 w 2 w 1 45 a u 1 24.87 24.64 q 4.63 4.11 q 18.42 f 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.385 0.371 0.815 0.785 0.131 0.120 0.255 0.245 0.294 0.251 0.385 0.370 0.020 0.010 0.980 0.970 0.182 0.162 0.725 0.107 0.091 p h dimensions (millimetre dimensions are derived from the original inch dimensions) w 2 c m m
2003 sep 02 15 philips semiconductors product speci?cation vhf power mos transistor BLF245 data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2003 sca75 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands 613524/04/pp 16 date of release: 2003 sep 02 document order number: 9397 750 11585

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